NL267831A - - Google Patents

Info

Publication number
NL267831A
NL267831A NL267831DA NL267831A NL 267831 A NL267831 A NL 267831A NL 267831D A NL267831D A NL 267831DA NL 267831 A NL267831 A NL 267831A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL267831A publication Critical patent/NL267831A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Thyristors (AREA)
  • Cold Cathode And The Manufacture (AREA)
NL267831D 1960-08-17 NL267831A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50156A US3056888A (en) 1960-08-17 1960-08-17 Semiconductor triode

Publications (1)

Publication Number Publication Date
NL267831A true NL267831A (pt)

Family

ID=21963656

Family Applications (1)

Application Number Title Priority Date Filing Date
NL267831D NL267831A (pt) 1960-08-17

Country Status (5)

Country Link
US (1) US3056888A (pt)
BE (1) BE606948A (pt)
DE (1) DE1181328B (pt)
GB (1) GB993314A (pt)
NL (1) NL267831A (pt)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299911A (pt) * 1951-08-02
NL265382A (pt) * 1960-03-08
DE1160106B (de) * 1960-11-11 1963-12-27 Intermetall Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen
NL274830A (pt) * 1961-04-12
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
NL293292A (pt) * 1962-06-11
NL297002A (pt) * 1962-08-23 1900-01-01
NL297602A (pt) * 1962-09-07
BE637064A (pt) * 1962-09-07 Rca Corp
US3268827A (en) * 1963-04-01 1966-08-23 Rca Corp Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability
NL302841A (pt) * 1963-01-02
NL132570C (pt) * 1963-03-07
GB1052379A (pt) * 1963-03-28 1900-01-01
US3267389A (en) * 1963-04-10 1966-08-16 Burroughs Corp Quantum mechanical tunnel injection amplifying apparatus
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
US3360736A (en) * 1963-09-10 1967-12-26 Hitachi Ltd Two input field effect transistor amplifier
DE1228343B (de) * 1963-10-22 1966-11-10 Siemens Ag Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
US3273066A (en) * 1963-12-20 1966-09-13 Litton Systems Inc Apparatus for detecting changes in the atmospheric electric field
GB1094068A (en) * 1963-12-26 1967-12-06 Rca Corp Semiconductive devices and methods of producing them
GB1100124A (en) * 1964-02-13 1968-01-24 Hitachi Ltd Semiconductor devices and methods for producing the same
US3339272A (en) * 1964-05-28 1967-09-05 Gen Motors Corp Method of forming contacts in semiconductor devices
USB381501I5 (pt) * 1964-07-09
US3358195A (en) * 1964-07-24 1967-12-12 Motorola Inc Remote cutoff field effect transistor
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor
GB1095412A (pt) * 1964-08-26
FR1424482A (fr) * 1964-12-01 1966-01-14 Csf élément de circuit électrique intégré à réactance inductive
US3414781A (en) * 1965-01-22 1968-12-03 Hughes Aircraft Co Field effect transistor having interdigitated source and drain and overlying, insulated gate
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
GB1153428A (en) 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
US3445924A (en) * 1965-06-30 1969-05-27 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characteristics
US3396317A (en) * 1965-11-30 1968-08-06 Texas Instruments Inc Surface-oriented high frequency diode
US3336486A (en) * 1966-09-06 1967-08-15 Energy Conversion Devices Inc Control system having multiple electrode current controlling device
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
DE1589683A1 (de) * 1967-04-04 1970-03-26 Itt Ind Gmbh Deutsche Flaechentransistor
US3497776A (en) * 1968-03-06 1970-02-24 Westinghouse Electric Corp Uniform avalanche-breakdown rectifiers
US3535600A (en) * 1968-10-10 1970-10-20 Gen Electric Mos varactor diode
US3590477A (en) * 1968-12-19 1971-07-06 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characeristics
US3600647A (en) * 1970-03-02 1971-08-17 Gen Electric Field-effect transistor with reduced drain-to-substrate capacitance
US3611070A (en) * 1970-06-15 1971-10-05 Gen Electric Voltage-variable capacitor with controllably extendible pn junction region
US3648127A (en) * 1970-09-28 1972-03-07 Fairchild Camera Instr Co Reach through or punch{13 through breakdown for gate protection in mos devices
CN107635769B (zh) 2015-05-19 2020-09-15 康宁股份有限公司 使片材与载体粘结的制品和方法
TWI810161B (zh) 2016-08-31 2023-08-01 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
JP7260523B2 (ja) 2017-08-18 2023-04-18 コーニング インコーポレイテッド ポリカチオン性高分子を使用した一時的結合
CN111615567B (zh) * 2017-12-15 2023-04-14 康宁股份有限公司 用于处理基板的方法和用于制备包括粘合片材的制品的方法
CN112259428A (zh) * 2020-10-23 2021-01-22 陕西科技大学 一种平面型纳米沟道真空场发射三极管装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2617865A (en) * 1948-06-17 1952-11-11 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
NL97896C (pt) * 1955-02-18

Also Published As

Publication number Publication date
DE1181328B (de) 1964-11-12
GB993314A (en) 1965-05-26
US3056888A (en) 1962-10-02
BE606948A (fr) 1961-12-01

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