NL256790A - - Google Patents

Info

Publication number
NL256790A
NL256790A NL256790DA NL256790A NL 256790 A NL256790 A NL 256790A NL 256790D A NL256790D A NL 256790DA NL 256790 A NL256790 A NL 256790A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL256790A publication Critical patent/NL256790A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P10/00
    • H10P95/00
    • H10P95/80
    • H10W72/00
    • H10W76/10
    • H10W76/60
    • H10W99/00
NL256790D 1959-10-16 NL256790A (OSRAM)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US84685159A 1959-10-16 1959-10-16
US846956A US3054936A (en) 1959-10-16 1959-10-16 Transistor
US846850A US3022452A (en) 1959-10-16 1959-10-16 Diode

Publications (1)

Publication Number Publication Date
NL256790A true NL256790A (OSRAM) 1900-01-01

Family

ID=27420330

Family Applications (2)

Application Number Title Priority Date Filing Date
NL256790D NL256790A (OSRAM) 1959-10-16
NL256931D NL256931A (OSRAM) 1959-10-16

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL256931D NL256931A (OSRAM) 1959-10-16

Country Status (4)

Country Link
US (2) US3054936A (OSRAM)
DE (2) DE1162485B (OSRAM)
GB (1) GB950849A (OSRAM)
NL (2) NL256931A (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3217379A (en) * 1960-12-09 1965-11-16 Texas Instruments Inc Method for forming pn junctions in indium antimonide with special application to infrared detection
US3189799A (en) * 1961-06-14 1965-06-15 Microwave Ass Semiconductor devices and method of fabricating them
US3238424A (en) * 1961-06-14 1966-03-01 Microwave Ass Semiconductor devices and method of fabricating them
US3237061A (en) * 1961-07-26 1966-02-22 Columbia Broadcasting Syst Inc Semiconductor device having exposed semiconductor surface and method of manufacture
US3259815A (en) * 1962-06-28 1966-07-05 Texas Instruments Inc Gallium arsenide body containing copper
DE1300163B (de) * 1967-06-29 1969-07-31 Philips Nv Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Legierungselektrode
US4529996A (en) * 1983-04-14 1985-07-16 Allied Coporation Indium phosphide-boron phosphide heterojunction bipolar transistor
US6936863B2 (en) * 2002-11-18 2005-08-30 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode
JP4658643B2 (ja) * 2004-03-08 2011-03-23 昭和電工株式会社 リン化硼素系半導体素子
US7732831B2 (en) 2004-03-29 2010-06-08 Showa Denko K.K. Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed within
TWI258183B (en) * 2004-04-28 2006-07-11 Showa Denko Kk Compound semiconductor light-emitting device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
DE1073110B (de) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern
NL231899A (OSRAM) * 1957-11-15
DE1796305U (de) * 1959-05-16 1959-09-24 Siemens Ag Halbleiteranordnung mit mindestens einer flaechigen elektrode.

Also Published As

Publication number Publication date
NL256931A (OSRAM) 1900-01-01
US3022452A (en) 1962-02-20
US3054936A (en) 1962-09-18
DE1162486B (de) 1964-02-06
DE1162485B (de) 1964-02-06
GB950849A (en) 1964-02-26

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