NL256369A - - Google Patents

Info

Publication number
NL256369A
NL256369A NL256369DA NL256369A NL 256369 A NL256369 A NL 256369A NL 256369D A NL256369D A NL 256369DA NL 256369 A NL256369 A NL 256369A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL256369A publication Critical patent/NL256369A/xx

Links

Classifications

    • H10W40/10
    • H10W40/70
    • H10W76/161
NL256369D 1959-09-30 NL256369A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET17280A DE1302062B (de) 1959-09-30 1959-09-30 Verfahren zum Herstellen eines guten Waermeuebergangs von einem Halbleiterbauelement zur Innenwand seines Gehaeuses

Publications (1)

Publication Number Publication Date
NL256369A true NL256369A (en:Method) 1900-01-01

Family

ID=7548540

Family Applications (1)

Application Number Title Priority Date Filing Date
NL256369D NL256369A (en:Method) 1959-09-30

Country Status (5)

Country Link
US (1) US3256469A (en:Method)
DE (1) DE1302062B (en:Method)
FR (1) FR1268801A (en:Method)
GB (1) GB969483A (en:Method)
NL (1) NL256369A (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409808A (en) * 1965-03-12 1968-11-05 Int Rectifier Corp High voltage diode for low pressure applications
US3427510A (en) * 1965-08-12 1969-02-11 Siemens Ag Semiconductor with encapsulating housing

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2829422A (en) * 1952-05-21 1958-04-08 Bell Telephone Labor Inc Methods of fabricating semiconductor signal translating devices
US2931958A (en) * 1954-05-03 1960-04-05 Nat Res Dev Semi-conductor devices
DE1042762B (de) * 1955-02-26 1958-11-06 Siemens Ag Flaechengleichrichter bzw. -transistor, welcher mit mindestens einer seiner Elektroden flaechenhaft mit einem die Verlustwaerme abfuehrenden Koerper in Kontakt steht
US2830238A (en) * 1955-09-30 1958-04-08 Hughes Aircraft Co Heat dissipating semiconductor device
US2889498A (en) * 1955-11-08 1959-06-02 Westinghouse Electric Corp Semiconductor rectifier assembly
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices
US2955242A (en) * 1956-11-27 1960-10-04 Raytheon Co Hermetically sealed power transistors
BE566430A (en:Method) * 1957-04-05
US3036249A (en) * 1957-08-05 1962-05-22 Fansteel Metallurgical Corp Capacitor
US2903629A (en) * 1958-10-23 1959-09-08 Advanced Res Associates Inc Encapsulated semiconductor assembly
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier
US3142886A (en) * 1959-08-07 1964-08-04 Texas Instruments Inc Method of making glass encased electrolytic capacitor assembly and article resultingtherefrom
DE1784807C3 (de) * 1968-09-20 1974-04-04 Strabag Bau-Ag, 5000 Koeln Stoßverbindung der Längsbewehrungsstäbe von vorgefertigten Bauwerksteilen aus Beton

Also Published As

Publication number Publication date
US3256469A (en) 1966-06-14
GB969483A (en) 1964-09-09
FR1268801A (fr) 1961-08-04
DE1302062B (de) 1969-11-13

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