NL250879A - - Google Patents

Info

Publication number
NL250879A
NL250879A NL250879DA NL250879A NL 250879 A NL250879 A NL 250879A NL 250879D A NL250879D A NL 250879DA NL 250879 A NL250879 A NL 250879A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL250879A publication Critical patent/NL250879A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/16Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
    • H03K19/162Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices using parametrons
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/10Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
NL250879D 1959-08-05 NL250879A (xx)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US83175159A 1959-08-05 1959-08-05
US846421A US3089038A (en) 1959-08-05 1959-10-14 Impedance means including tunneling device for performing logic operations
US364030A US3325703A (en) 1959-08-05 1964-04-30 Oscillator consisting of an esaki diode in direct shunt with an impedance element

Publications (1)

Publication Number Publication Date
NL250879A true NL250879A (xx)

Family

ID=27408644

Family Applications (3)

Application Number Title Priority Date Filing Date
NL253079D NL253079A (xx) 1959-08-05
NL135269D NL135269C (xx) 1959-08-05
NL250879D NL250879A (xx) 1959-08-05

Family Applications Before (2)

Application Number Title Priority Date Filing Date
NL253079D NL253079A (xx) 1959-08-05
NL135269D NL135269C (xx) 1959-08-05

Country Status (5)

Country Link
US (2) US3089038A (xx)
CH (1) CH384721A (xx)
DE (2) DE1188676B (xx)
GB (2) GB955705A (xx)
NL (3) NL250879A (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187193A (en) * 1959-10-15 1965-06-01 Rca Corp Multi-junction negative resistance semiconducting devices
BE632999A (xx) * 1962-06-01
GB1053105A (xx) * 1963-08-19
US3522590A (en) * 1964-11-03 1970-08-04 Research Corp Negative resistance sandwich structure memory device
US3406299A (en) * 1965-10-27 1968-10-15 Bell Telephone Labor Inc Negative resistance device having thermal instability
US7865807B2 (en) * 2004-02-25 2011-01-04 Peter Lablans Multi-valued check symbol calculation in error detection and correction
US7861745B2 (en) * 2006-09-26 2011-01-04 Parker-Hannifin Corporation Mine blender hose
GB201011110D0 (en) * 2010-07-01 2010-08-18 Univ Manchester Metropolitan Binary half-adder and other logic circuits
US9065006B2 (en) * 2012-05-11 2015-06-23 Mtpv Power Corporation Lateral photovoltaic device for near field use
JP2019512202A (ja) 2016-02-08 2019-05-09 エムティーピーヴィ パワー コーポレイション 放射性ミクロンギャップ熱光起電性システム透明エミッタ

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB491603A (en) * 1937-03-12 1938-09-06 Siemens Ag Improvements in oscillatory circuits comprising negative resistance
FR1004214A (fr) * 1947-03-20 1952-03-27 Cfcmug Modulateur de fréquence
US2629834A (en) * 1951-09-15 1953-02-24 Bell Telephone Labor Inc Gate and trigger circuits employing transistors
US2778956A (en) * 1952-10-31 1957-01-22 Bell Telephone Labor Inc Semiconductor signal translating devices
DE1040086B (de) * 1952-11-05 1958-10-02 Standard Elektrik Lorenz Ag Schaltungsanordnung zur Kompensation von Frequenzaenderungen
GB766987A (en) * 1953-03-27 1957-01-30 Emi Ltd Improvements relating to valve chain circuits
US2901638A (en) * 1953-07-21 1959-08-25 Sylvania Electric Prod Transistor switching circuit
DE1001347B (de) * 1954-09-17 1957-01-24 Western Electric Co Amplitudenbegrenzer zur symmetrischen Begrenzung von Wechselspannungen
US2903603A (en) * 1954-12-09 1959-09-08 Arthur J Glenn Transistor mono-stable sweep generator
DE1001346B (de) * 1955-03-11 1957-01-24 Siemens Ag Anordnung zur Erzeugung elektrischer Schwingungen bestimmter Frequenz unter Verwendung eines rueckgekoppelten Transistors
AT202597B (de) * 1956-10-02 1959-03-10 Philips Nv Schaltung zum Steuern der Resonanzfrequenz eines Schwingungskreises
DE1057177B (de) * 1957-05-17 1959-05-14 Sueddeutsche Telefon App Kabel Elektronischer Impulsgeber fuer die Ziffernwahl in der Nachrichtentechnik
US3098160A (en) * 1958-02-24 1963-07-16 Clevite Corp Field controlled avalanche semiconductive device
DE1064559B (de) * 1958-03-29 1959-09-03 Sueddeutsche Telefon App Kabel Schaltungsanordnung zur Erzeugung von Wechselspannungsimpulsen
NL247746A (xx) * 1959-01-27
US2986724A (en) * 1959-05-27 1961-05-30 Bell Telephone Labor Inc Negative resistance oscillator
US3249891A (en) * 1959-08-05 1966-05-03 Ibm Oscillator apparatus utilizing esaki diode
US3027501A (en) * 1959-09-29 1962-03-27 Bell Telephone Labor Inc Semiconductive device
US3114864A (en) * 1960-02-08 1963-12-17 Fairchild Camera Instr Co Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions
US3178797A (en) * 1961-06-12 1965-04-20 Ibm Semiconductor device formation

Also Published As

Publication number Publication date
GB955706A (en) 1964-04-15
GB955705A (en) 1964-04-15
DE1188676B (de) 1965-03-11
US3325703A (en) 1967-06-13
CH384721A (de) 1965-02-26
US3089038A (en) 1963-05-07
NL253079A (xx)
DE1260556B (de) 1968-02-08
NL135269C (xx)

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