NL245567A - - Google Patents
Info
- Publication number
 - NL245567A NL245567A NL245567DA NL245567A NL 245567 A NL245567 A NL 245567A NL 245567D A NL245567D A NL 245567DA NL 245567 A NL245567 A NL 245567A
 - Authority
 - NL
 - Netherlands
 
Links
Classifications
- 
        
- H—ELECTRICITY
 - H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
 - H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
 - H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
 - H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
 - H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
 - H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
 
 - 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
 
 - 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
 - H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
 - H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
 - H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
 - H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
 
 - 
        
- H—ELECTRICITY
 - H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
 - H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
 - H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
 - H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
 - H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
 - H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
 
 - 
        
- H—ELECTRICITY
 - H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
 - H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
 - H10D64/00—Electrodes of devices having potential barriers
 - H10D64/60—Electrodes characterised by their materials
 
 
Landscapes
- Engineering & Computer Science (AREA)
 - Physics & Mathematics (AREA)
 - Condensed Matter Physics & Semiconductors (AREA)
 - General Physics & Mathematics (AREA)
 - Manufacturing & Machinery (AREA)
 - Computer Hardware Design (AREA)
 - Microelectronics & Electronic Packaging (AREA)
 - Power Engineering (AREA)
 - Electrodes Of Semiconductors (AREA)
 
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| US775209A US2956217A (en) | 1958-11-20 | 1958-11-20 | Semiconductor devices and methods of making them | 
| US775163A US2956216A (en) | 1958-11-20 | 1958-11-20 | Semiconductor devices and methods of making them | 
Publications (1)
| Publication Number | Publication Date | 
|---|---|
| NL245567A true NL245567A (enEXAMPLES) | 
Family
ID=27119002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| NL245567D NL245567A (enEXAMPLES) | 1958-11-20 | 
Country Status (5)
| Country | Link | 
|---|---|
| US (2) | US2956216A (enEXAMPLES) | 
| DE (1) | DE1098617B (enEXAMPLES) | 
| FR (1) | FR1240303A (enEXAMPLES) | 
| GB (1) | GB930503A (enEXAMPLES) | 
| NL (1) | NL245567A (enEXAMPLES) | 
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US3109758A (en) * | 1959-10-26 | 1963-11-05 | Bell Telephone Labor Inc | Improved tunnel diode | 
| NL121714C (enEXAMPLES) * | 1959-12-14 | |||
| NL264273A (enEXAMPLES) * | 1960-05-02 | |||
| US3110849A (en) * | 1960-10-03 | 1963-11-12 | Gen Electric | Tunnel diode device | 
| US3242061A (en) * | 1962-03-07 | 1966-03-22 | Micro State Electronics Corp | Method of making a tunnel diode assembly | 
| US3245847A (en) * | 1962-11-19 | 1966-04-12 | Hughes Aircraft Co | Method of producing stable gallium arsenide and semiconductor diodes made therefrom | 
| GB28298A (enEXAMPLES) * | 1963-07-17 | |||
| US3289052A (en) * | 1963-10-14 | 1966-11-29 | California Inst Res Found | Surface barrier indium arsenide transistor | 
| GB1105314A (en) * | 1963-12-23 | 1968-03-06 | Mullard Ltd | Improvements in and relating to semiconductor devices | 
| US3479573A (en) * | 1967-02-15 | 1969-11-18 | Gen Electric | Wide band gap semiconductor devices having improved temperature independent non-rectifying contacts | 
| US6976495B2 (en) * | 2002-07-19 | 2005-12-20 | Revlon Consumer Products Corporation | Cosmetic applicator and storage container | 
| CN102921666B (zh) * | 2012-11-21 | 2014-12-17 | 南京熊猫电子股份有限公司 | 消除电容式触摸屏蚀刻残留溶液的方法 | 
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices | 
| US2862160A (en) * | 1955-10-18 | 1958-11-25 | Hoffmann Electronics Corp | Light sensitive device and method of making the same | 
| US2842831A (en) * | 1956-08-30 | 1958-07-15 | Bell Telephone Labor Inc | Manufacture of semiconductor devices | 
| US2866140A (en) * | 1957-01-11 | 1958-12-23 | Texas Instruments Inc | Grown junction transistors | 
- 
        0
        
- NL NL245567D patent/NL245567A/xx unknown
 
 - 
        1958
        
- 1958-11-20 US US775163A patent/US2956216A/en not_active Expired - Lifetime
 - 1958-11-20 US US775209A patent/US2956217A/en not_active Expired - Lifetime
 
 - 
        1959
        
- 1959-11-06 GB GB37772/59A patent/GB930503A/en not_active Expired
 - 1959-11-10 FR FR809743A patent/FR1240303A/fr not_active Expired
 - 1959-11-20 DE DER26765A patent/DE1098617B/de active Pending
 
 
Also Published As
| Publication number | Publication date | 
|---|---|
| GB930503A (en) | 1963-07-03 | 
| FR1240303A (fr) | 1960-07-25 | 
| US2956217A (en) | 1960-10-11 | 
| DE1098617B (de) | 1961-02-02 | 
| US2956216A (en) | 1960-10-11 |