NL245195A - - Google Patents

Info

Publication number
NL245195A
NL245195A NL245195DA NL245195A NL 245195 A NL245195 A NL 245195A NL 245195D A NL245195D A NL 245195DA NL 245195 A NL245195 A NL 245195A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL245195A publication Critical patent/NL245195A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645Combinations of only lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
NL245195D 1958-12-11 NL245195A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US779593A US3061739A (en) 1958-12-11 1958-12-11 Multiple channel field effect semiconductor

Publications (1)

Publication Number Publication Date
NL245195A true NL245195A (en:Method)

Family

ID=25116917

Family Applications (1)

Application Number Title Priority Date Filing Date
NL245195D NL245195A (en:Method) 1958-12-11

Country Status (8)

Country Link
US (1) US3061739A (en:Method)
BE (1) BE584466A (en:Method)
CH (1) CH397868A (en:Method)
DE (1) DE1152185B (en:Method)
ES (1) ES253851A1 (en:Method)
FR (1) FR1242628A (en:Method)
GB (1) GB941368A (en:Method)
NL (1) NL245195A (en:Method)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210696A (en) * 1961-02-10 1965-10-05 Westinghouse Electric Corp Bridged-t filter
US3187606A (en) * 1961-06-05 1965-06-08 Burroughs Corp Fabricating tool and technique
US3192398A (en) * 1961-07-31 1965-06-29 Merck & Co Inc Composite semiconductor delay line device
US3122655A (en) * 1961-12-27 1964-02-25 James J Murray Solid state reactive phase lagging device
US3255360A (en) * 1962-03-30 1966-06-07 Research Corp Field-effect negative resistor
US3163916A (en) * 1962-06-22 1965-01-05 Int Rectifier Corp Unijunction transistor device
NL299194A (en:Method) * 1962-10-15
NL299821A (en:Method) * 1962-10-31 1900-01-01
US3173102A (en) * 1962-12-06 1965-03-09 Jr Walter Loewenstern Solid state multiple stream travelling wave amplifier
NL301882A (en:Method) * 1962-12-17
US3149765A (en) * 1963-05-28 1964-09-22 Western Electric Co Apparatus for removing waffrs from semiconductor slices
US3169837A (en) * 1963-07-31 1965-02-16 Int Rectifier Corp Method of dicing semiconductor wafers
US3292129A (en) * 1963-10-07 1966-12-13 Grace W R & Co Silicon thermistors
US3343114A (en) * 1963-12-30 1967-09-19 Texas Instruments Inc Temperature transducer
US3340490A (en) * 1965-10-21 1967-09-05 Texas Instruments Inc Thermistor
US4364021A (en) * 1977-10-07 1982-12-14 General Electric Company Low voltage varistor configuration

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL79529C (en:Method) * 1948-09-24
NL154165C (en:Method) * 1949-10-11
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
DE1039646B (de) * 1953-10-19 1958-09-25 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen zwischen Zonen unterschiedlichen Leitungstyps
BE552928A (en:Method) * 1957-03-18

Also Published As

Publication number Publication date
GB941368A (en) 1963-11-13
FR1242628A (fr) 1960-09-30
DE1152185B (de) 1963-08-01
US3061739A (en) 1962-10-30
ES253851A1 (es) 1960-03-01
BE584466A (fr) 1960-03-01
CH397868A (fr) 1965-08-31

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