NL244298A - - Google Patents

Info

Publication number
NL244298A
NL244298A NL244298DA NL244298A NL 244298 A NL244298 A NL 244298A NL 244298D A NL244298D A NL 244298DA NL 244298 A NL244298 A NL 244298A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL244298A publication Critical patent/NL244298A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/06Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066Heating of the material to be evaporated
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL244298D 1959-10-13 NL244298A (US06168655-20010102-C00055.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL244298 1959-10-13

Publications (1)

Publication Number Publication Date
NL244298A true NL244298A (US06168655-20010102-C00055.png)

Family

ID=19751976

Family Applications (1)

Application Number Title Priority Date Filing Date
NL244298D NL244298A (US06168655-20010102-C00055.png) 1959-10-13

Country Status (6)

Country Link
CH (1) CH442236A (US06168655-20010102-C00055.png)
DE (1) DE1240816B (US06168655-20010102-C00055.png)
ES (1) ES261609A1 (US06168655-20010102-C00055.png)
FR (1) FR1270317A (US06168655-20010102-C00055.png)
GB (1) GB962166A (US06168655-20010102-C00055.png)
NL (1) NL244298A (US06168655-20010102-C00055.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1258397B (de) * 1962-11-15 1968-01-11 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung durch einkristallines Aufwachsen halbleitender Schichten mittels Transportreaktion
CN1256998C (zh) 2000-03-23 2006-05-24 新日铁化学株式会社 升华精制的方法和装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (US06168655-20010102-C00055.png) * 1951-03-07 1900-01-01
NL168491B (US06168655-20010102-C00055.png) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen

Also Published As

Publication number Publication date
DE1240816B (de) 1967-05-24
CH442236A (de) 1967-08-31
FR1270317A (fr) 1961-08-25
GB962166A (en) 1964-07-01
ES261609A1 (es) 1960-12-01

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