NL240883A - - Google Patents

Info

Publication number
NL240883A
NL240883A NL240883DA NL240883A NL 240883 A NL240883 A NL 240883A NL 240883D A NL240883D A NL 240883DA NL 240883 A NL240883 A NL 240883A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL240883A publication Critical patent/NL240883A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/06Gettering
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/062Gold diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Transistors (AREA)
NL240883D 1958-07-17 NL240883A (US20110009641A1-20110113-C00256.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US749227A US2964689A (en) 1958-07-17 1958-07-17 Switching transistors

Publications (1)

Publication Number Publication Date
NL240883A true NL240883A (US20110009641A1-20110113-C00256.png)

Family

ID=25012824

Family Applications (2)

Application Number Title Priority Date Filing Date
NL240883D NL240883A (US20110009641A1-20110113-C00256.png) 1958-07-17
NL125999D NL125999C (US20110009641A1-20110113-C00256.png) 1958-07-17

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL125999D NL125999C (US20110009641A1-20110113-C00256.png) 1958-07-17

Country Status (6)

Country Link
US (1) US2964689A (US20110009641A1-20110113-C00256.png)
BE (1) BE580254A (US20110009641A1-20110113-C00256.png)
DE (1) DE1127001B (US20110009641A1-20110113-C00256.png)
FR (1) FR1230212A (US20110009641A1-20110113-C00256.png)
GB (1) GB854477A (US20110009641A1-20110113-C00256.png)
NL (2) NL125999C (US20110009641A1-20110113-C00256.png)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121810C (US20110009641A1-20110113-C00256.png) * 1955-11-04
FR1209312A (fr) * 1958-12-17 1960-03-01 Hughes Aircraft Co Perfectionnements aux dispositifs semi-conducteurs du type à jonction
DE1071846B (US20110009641A1-20110113-C00256.png) * 1959-01-03 1959-12-24
NL249699A (US20110009641A1-20110113-C00256.png) * 1959-04-08
NL252132A (US20110009641A1-20110113-C00256.png) * 1959-06-30
NL121135C (US20110009641A1-20110113-C00256.png) * 1960-01-29
US3172785A (en) * 1960-01-30 1965-03-09 Method of manufacturing transistors particularly for switching purposes
US3109760A (en) * 1960-02-15 1963-11-05 Cievite Corp P-nu junction and method
US3098954A (en) * 1960-04-27 1963-07-23 Texas Instruments Inc Mesa type transistor and method of fabrication thereof
US3200017A (en) * 1960-09-26 1965-08-10 Gen Electric Gallium arsenide semiconductor devices
US3174882A (en) * 1961-02-02 1965-03-23 Bell Telephone Labor Inc Tunnel diode
NL275313A (US20110009641A1-20110113-C00256.png) * 1961-05-10
GB942901A (en) * 1961-08-29 1963-11-27 Ass Elect Ind Improvements in controlled semi-conductor rectifiers
US3233305A (en) * 1961-09-26 1966-02-08 Ibm Switching transistors with controlled emitter-base breakdown
US3377215A (en) * 1961-09-29 1968-04-09 Texas Instruments Inc Diode array
US3132408A (en) * 1962-01-18 1964-05-12 Gen Electric Method of making semiconductor strain sensitive devices
DE1252809B (de) * 1962-12-17 1967-10-26 Tektronix, Inc., Beaverton, Oreg. (V. St. A.) Halbleiterdiode mit einem einkristallinen Halbleiterkörper und mit Rekombinationszentren in der n- und in der p-Zone und Verfahren zum Herstellen
NL303035A (US20110009641A1-20110113-C00256.png) * 1963-02-06 1900-01-01
GB1028393A (en) * 1963-03-13 1966-05-04 Siemens Ag Semi-conductor components
DE1639568B1 (de) * 1963-12-07 1969-10-23 Siemens Ag Verfahren zum Herstellen einer Schaltdiode mit einem Halbleiterkoerper mit vier Zonen von abwechselnd unterschiedlichem Leitungstyp
US3390020A (en) * 1964-03-17 1968-06-25 Mandelkorn Joseph Semiconductor material and method of making same
DE1439347A1 (de) * 1964-03-18 1968-11-07 Siemens Ag Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ
US3389024A (en) * 1964-05-12 1968-06-18 Licentia Gmbh Method of forming a semiconductor by diffusion through the use of a cobalt salt
GB1095047A (en) * 1964-09-09 1967-12-13 Westinghouse Brake & Signal Semi-conductor devices and the manufacture thereof
DE1439737B2 (de) * 1964-10-31 1970-05-06 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen einer Halblei teranordnung
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion
US3422322A (en) * 1965-08-25 1969-01-14 Texas Instruments Inc Drift transistor
US3539401A (en) * 1966-05-25 1970-11-10 Matsushita Electric Ind Co Ltd Method of manufacturing mechano-electrical transducer
US3464868A (en) * 1967-01-13 1969-09-02 Bell Telephone Labor Inc Method of enhancing transistor switching characteristics

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
US2813233A (en) * 1954-07-01 1957-11-12 Bell Telephone Labor Inc Semiconductive device
BE544843A (US20110009641A1-20110113-C00256.png) * 1955-02-25
BE547227A (US20110009641A1-20110113-C00256.png) * 1955-04-21
US2790940A (en) * 1955-04-22 1957-04-30 Bell Telephone Labor Inc Silicon rectifier and method of manufacture
NL107361C (US20110009641A1-20110113-C00256.png) * 1955-04-22 1900-01-01
BE547274A (US20110009641A1-20110113-C00256.png) * 1955-06-20
US2792540A (en) * 1955-08-04 1957-05-14 Bell Telephone Labor Inc Junction transistor
NL211463A (US20110009641A1-20110113-C00256.png) * 1956-02-08
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices

Also Published As

Publication number Publication date
DE1127001B (de) 1962-04-05
FR1230212A (fr) 1960-09-14
US2964689A (en) 1960-12-13
NL125999C (US20110009641A1-20110113-C00256.png)
BE580254A (US20110009641A1-20110113-C00256.png)
GB854477A (en) 1960-11-16

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