NL235051A - - Google Patents
Info
- Publication number
- NL235051A NL235051A NL235051DA NL235051A NL 235051 A NL235051 A NL 235051A NL 235051D A NL235051D A NL 235051DA NL 235051 A NL235051 A NL 235051A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1561/58A GB911292A (en) | 1958-01-16 | 1958-01-16 | Improvements in and relating to semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
NL235051A true NL235051A (lt) |
Family
ID=9724105
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL121250D NL121250C (lt) | 1958-01-16 | ||
NL235051D NL235051A (lt) | 1958-01-16 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL121250D NL121250C (lt) | 1958-01-16 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3069297A (lt) |
BE (1) | BE574814A (lt) |
CH (1) | CH370165A (lt) |
DE (1) | DE1090770B (lt) |
FR (1) | FR1225692A (lt) |
GB (1) | GB911292A (lt) |
NL (2) | NL235051A (lt) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL252855A (lt) * | 1959-06-23 | |||
US3276925A (en) * | 1959-12-12 | 1966-10-04 | Nippon Electric Co | Method of producing tunnel diodes by double alloying |
NL121714C (lt) * | 1959-12-14 | |||
NL287617A (lt) * | 1962-01-12 | |||
US3243325A (en) * | 1962-06-09 | 1966-03-29 | Fujitsu Ltd | Method of producing a variable-capacitance germanium diode and product produced thereby |
GB1074284A (en) * | 1963-01-09 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
DE1232269B (de) * | 1963-08-23 | 1967-01-12 | Telefunken Patent | Diffusions-Verfahren zum Herstellen eines Halbleiterbauelementes mit Emitter-, Basis- und Kollektorzone |
DE1215754B (de) * | 1964-02-24 | 1966-05-05 | Danfoss As | Elektronischer Schalter |
DE1614861C3 (de) * | 1967-09-01 | 1982-03-11 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors |
US3955270A (en) * | 1973-08-31 | 1976-05-11 | Bell Telephone Laboratories, Incorporated | Methods for making semiconductor devices |
US3905162A (en) * | 1974-07-23 | 1975-09-16 | Silicon Material Inc | Method of preparing high yield semiconductor wafer |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2865082A (en) * | 1953-07-16 | 1958-12-23 | Sylvania Electric Prod | Semiconductor mount and method |
NL91651C (lt) * | 1953-12-09 | |||
NL207969A (lt) * | 1955-06-28 | |||
DE1073111B (de) * | 1954-12-02 | 1960-01-14 | Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen | Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper |
NL111788C (lt) * | 1956-06-18 |
-
0
- BE BE574814D patent/BE574814A/xx unknown
- NL NL121250D patent/NL121250C/xx active
- NL NL235051D patent/NL235051A/xx unknown
-
1958
- 1958-01-16 GB GB1561/58A patent/GB911292A/en not_active Expired
-
1959
- 1959-01-13 CH CH6825259A patent/CH370165A/de unknown
- 1959-01-14 DE DEN16116A patent/DE1090770B/de active Pending
- 1959-01-16 US US787195A patent/US3069297A/en not_active Expired - Lifetime
- 1959-01-16 FR FR784224A patent/FR1225692A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB911292A (en) | 1962-11-21 |
NL121250C (lt) | |
BE574814A (lt) | |
US3069297A (en) | 1962-12-18 |
DE1090770B (de) | 1960-10-13 |
FR1225692A (fr) | 1960-07-04 |
CH370165A (de) | 1963-06-30 |