NL235051A - - Google Patents

Info

Publication number
NL235051A
NL235051A NL235051DA NL235051A NL 235051 A NL235051 A NL 235051A NL 235051D A NL235051D A NL 235051DA NL 235051 A NL235051 A NL 235051A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL235051A publication Critical patent/NL235051A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
NL235051D 1958-01-16 NL235051A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1561/58A GB911292A (en) 1958-01-16 1958-01-16 Improvements in and relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
NL235051A true NL235051A (es)

Family

ID=9724105

Family Applications (2)

Application Number Title Priority Date Filing Date
NL121250D NL121250C (es) 1958-01-16
NL235051D NL235051A (es) 1958-01-16

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL121250D NL121250C (es) 1958-01-16

Country Status (7)

Country Link
US (1) US3069297A (es)
BE (1) BE574814A (es)
CH (1) CH370165A (es)
DE (1) DE1090770B (es)
FR (1) FR1225692A (es)
GB (1) GB911292A (es)
NL (2) NL235051A (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264084A (es) * 1959-06-23
US3276925A (en) * 1959-12-12 1966-10-04 Nippon Electric Co Method of producing tunnel diodes by double alloying
NL121714C (es) * 1959-12-14
BE627004A (es) * 1962-01-12
US3243325A (en) * 1962-06-09 1966-03-29 Fujitsu Ltd Method of producing a variable-capacitance germanium diode and product produced thereby
GB1074284A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
DE1232269B (de) * 1963-08-23 1967-01-12 Telefunken Patent Diffusions-Verfahren zum Herstellen eines Halbleiterbauelementes mit Emitter-, Basis- und Kollektorzone
DE1215754B (de) * 1964-02-24 1966-05-05 Danfoss As Elektronischer Schalter
DE1614861C3 (de) * 1967-09-01 1982-03-11 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors
US3955270A (en) * 1973-08-31 1976-05-11 Bell Telephone Laboratories, Incorporated Methods for making semiconductor devices
US3905162A (en) * 1974-07-23 1975-09-16 Silicon Material Inc Method of preparing high yield semiconductor wafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
NL91651C (es) * 1953-12-09
BE548647A (es) * 1955-06-28
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
DE1073632B (de) * 1956-06-18 1960-01-21 Radio Corporation Of America, New York, N. Y. (V. St. A.) Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
NL121250C (es)
FR1225692A (fr) 1960-07-04
GB911292A (en) 1962-11-21
CH370165A (de) 1963-06-30
US3069297A (en) 1962-12-18
BE574814A (es)
DE1090770B (de) 1960-10-13

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