NL216979A - - Google Patents
Info
- Publication number
- NL216979A NL216979A NL216979DA NL216979A NL 216979 A NL216979 A NL 216979A NL 216979D A NL216979D A NL 216979DA NL 216979 A NL216979 A NL 216979A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10P95/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/47—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US585670A US2870052A (en) | 1956-05-18 | 1956-05-18 | Semiconductive device and method for the fabrication thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL216979A true NL216979A (OSRAM) |
Family
ID=24342444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL216979D NL216979A (OSRAM) | 1956-05-18 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2870052A (OSRAM) |
| DE (1) | DE1130522B (OSRAM) |
| FR (1) | FR1173400A (OSRAM) |
| GB (1) | GB826063A (OSRAM) |
| NL (1) | NL216979A (OSRAM) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL231513A (OSRAM) * | 1957-09-20 | 1900-01-01 | ||
| US3033714A (en) * | 1957-09-28 | 1962-05-08 | Sony Corp | Diode type semiconductor device |
| US2987658A (en) * | 1958-01-10 | 1961-06-06 | Philco Corp | Improved semiconductor diode |
| US3076731A (en) * | 1958-08-04 | 1963-02-05 | Hughes Aircraft Co | Semiconductor devices and method of making the same |
| US2953488A (en) * | 1958-12-26 | 1960-09-20 | Shockley William | P-n junction having minimum transition layer capacitance |
| NL247746A (OSRAM) * | 1959-01-27 | |||
| US3099588A (en) * | 1959-03-11 | 1963-07-30 | Westinghouse Electric Corp | Formation of semiconductor transition regions by alloy vaporization and deposition |
| US3156592A (en) * | 1959-04-20 | 1964-11-10 | Sprague Electric Co | Microalloying method for semiconductive device |
| US3079287A (en) * | 1959-09-01 | 1963-02-26 | Texas Instruments Inc | Improved grown junction transistor and method of making same |
| DE1292253B (de) * | 1959-09-26 | 1969-04-10 | Telefunken Patent | Halbleiteranordnung |
| US3109758A (en) * | 1959-10-26 | 1963-11-05 | Bell Telephone Labor Inc | Improved tunnel diode |
| NL259446A (OSRAM) * | 1959-12-30 | 1900-01-01 | ||
| DE1154876B (de) * | 1960-08-04 | 1963-09-26 | Telefunken Patent | Transistor, insbesondere Schalttransistor, und Verfahren zu seinem Herstellen |
| US3225272A (en) * | 1961-01-23 | 1965-12-21 | Bendix Corp | Semiconductor triode |
| NL260810A (OSRAM) * | 1961-02-03 | |||
| GB1074287A (en) * | 1963-12-13 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE536149A (OSRAM) * | ||||
| DE894293C (de) * | 1951-06-29 | 1953-10-22 | Western Electric Co | Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
| US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
| US2750542A (en) * | 1953-04-02 | 1956-06-12 | Rca Corp | Unipolar semiconductor devices |
| BE539908A (OSRAM) * | 1954-07-19 |
-
0
- NL NL216979D patent/NL216979A/xx unknown
-
1956
- 1956-05-18 US US585670A patent/US2870052A/en not_active Expired - Lifetime
-
1957
- 1957-03-28 FR FR1173400D patent/FR1173400A/fr not_active Expired
- 1957-05-03 GB GB14162/57A patent/GB826063A/en not_active Expired
- 1957-05-14 DE DEP18553A patent/DE1130522B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB826063A (en) | 1959-12-23 |
| FR1173400A (fr) | 1959-02-24 |
| DE1130522B (de) | 1962-05-30 |
| US2870052A (en) | 1959-01-20 |