NL212548A - - Google Patents

Info

Publication number
NL212548A
NL212548A NL212548DA NL212548A NL 212548 A NL212548 A NL 212548A NL 212548D A NL212548D A NL 212548DA NL 212548 A NL212548 A NL 212548A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL212548A publication Critical patent/NL212548A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL212548D 1956-11-28 NL212548A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL212548 1956-11-28

Publications (1)

Publication Number Publication Date
NL212548A true NL212548A (enrdf_load_stackoverflow)

Family

ID=19750816

Family Applications (2)

Application Number Title Priority Date Filing Date
NL103477D NL103477C (enrdf_load_stackoverflow) 1956-11-28
NL212548D NL212548A (enrdf_load_stackoverflow) 1956-11-28

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL103477D NL103477C (enrdf_load_stackoverflow) 1956-11-28

Country Status (6)

Country Link
US (1) US2956863A (enrdf_load_stackoverflow)
CH (1) CH377786A (enrdf_load_stackoverflow)
DE (1) DE1051806B (enrdf_load_stackoverflow)
FR (1) FR1196958A (enrdf_load_stackoverflow)
GB (1) GB827466A (enrdf_load_stackoverflow)
NL (2) NL212548A (enrdf_load_stackoverflow)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1077187B (de) * 1958-11-13 1960-03-10 Werk Fuer Bauelemente Der Nach Verfahren zur Herstellung von Einkristallen aus halbleitenden Stoffen
US3097068A (en) * 1959-05-29 1963-07-09 Union Carbide Corp Crystallization of pure silicon platelets
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
DE1191789B (de) * 1960-10-25 1965-04-29 Siemens Ag Verfahren zum Ziehen von vorzugsweise einkristallinen Halbleiterstaeben
US3212858A (en) * 1963-01-28 1965-10-19 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
US3258314A (en) * 1963-04-12 1966-06-28 Westinghouse Electric Corp Method for interior zone melting of a crystalline rod
US3251655A (en) * 1963-09-27 1966-05-17 Westinghouse Electric Corp Apparatus for producing crystalline semiconductor material
US3261671A (en) * 1963-11-29 1966-07-19 Philips Corp Device for treating semi-conductor materials by melting
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
DE1238450B (de) * 1964-06-04 1967-04-13 Consortium Elektrochem Ind Verfahren zum Herstellen von spannungsfreien und rissefreien Staeben aus hochreinem Bor aus der Schmelze
US4116642A (en) * 1976-12-15 1978-09-26 Western Electric Company, Inc. Method and apparatus for avoiding undesirable deposits in crystal growing operations
DE2928089C3 (de) * 1979-07-12 1982-03-04 Heraeus Quarzschmelze Gmbh, 6450 Hanau Verbundtiegel für halbleitertechnologische Zwecke und Verfahren zur Herstellung
DE3005492C2 (de) * 1980-02-14 1983-10-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski
US4478676A (en) * 1982-09-07 1984-10-23 Litton Systems, Inc. Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
US4971650A (en) * 1989-09-22 1990-11-20 Westinghouse Electric Corp. Method of inhibiting dislocation generation in silicon dendritic webs
RU2320790C1 (ru) * 2006-06-01 2008-03-27 Институт кристаллографии имени А.В. Шубникова Российской академии Наук Устройство для выращивания монокристаллов оксидов тугоплавких металлов

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2291083A (en) * 1942-07-28 Furnace construction
US2753280A (en) * 1952-05-01 1956-07-03 Rca Corp Method and apparatus for growing crystalline material
US2686212A (en) * 1953-08-03 1954-08-10 Gen Electric Electric heating apparatus
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
US2839436A (en) * 1955-04-19 1958-06-17 Texas Instruments Inc Method and apparatus for growing semiconductor crystals

Also Published As

Publication number Publication date
FR1196958A (fr) 1959-11-27
NL103477C (enrdf_load_stackoverflow)
DE1051806B (de) 1959-03-05
GB827466A (en) 1960-02-03
CH377786A (de) 1964-05-31
US2956863A (en) 1960-10-18

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