NL2032428B1 - Method for suspended high-stress films on integrated distributed Bragg mirrors - Google Patents
Method for suspended high-stress films on integrated distributed Bragg mirrors Download PDFInfo
- Publication number
- NL2032428B1 NL2032428B1 NL2032428A NL2032428A NL2032428B1 NL 2032428 B1 NL2032428 B1 NL 2032428B1 NL 2032428 A NL2032428 A NL 2032428A NL 2032428 A NL2032428 A NL 2032428A NL 2032428 B1 NL2032428 B1 NL 2032428B1
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- Netherlands
- Prior art keywords
- layer
- reflector
- range
- top layer
- silicon
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- 238000000034 method Methods 0.000 title claims abstract description 98
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 101
- 239000010703 silicon Substances 0.000 claims abstract description 101
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 101
- 239000000463 material Substances 0.000 claims abstract description 45
- 238000000151 deposition Methods 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 25
- 239000003989 dielectric material Substances 0.000 claims abstract description 22
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- 230000005855 radiation Effects 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 13
- 229910003465 moissanite Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910007991 Si-N Inorganic materials 0.000 claims description 8
- 229910006294 Si—N Inorganic materials 0.000 claims description 8
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 8
- 229910018503 SF6 Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 4
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 24
- 230000035882 stress Effects 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 19
- 239000000758 substrate Substances 0.000 description 16
- 230000008901 benefit Effects 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910020776 SixNy Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- VQMWBBYLQSCNPO-NJFSPNSNSA-N promethium-147 Chemical compound [147Pm] VQMWBBYLQSCNPO-NJFSPNSNSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000005365 phosphate glass Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 229910052990 silicon hydride Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- DFENVCUUBABVIU-UHFFFAOYSA-N [Ca].[Y] Chemical compound [Ca].[Y] DFENVCUUBABVIU-UHFFFAOYSA-N 0.000 description 1
- WCULPSIYAQDUJW-UHFFFAOYSA-N [Li].[Sr] Chemical compound [Li].[Sr] WCULPSIYAQDUJW-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910001602 chrysoberyl Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- KWMNWMQPPKKDII-UHFFFAOYSA-N erbium ytterbium Chemical compound [Er].[Yb] KWMNWMQPPKKDII-UHFFFAOYSA-N 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/002—Optical devices or arrangements for the control of light using movable or deformable optical elements the movement or the deformation controlling the frequency of light, e.g. by Doppler effect
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
- G02B2207/101—Nanooptics
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Micromachines (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2032428A NL2032428B1 (en) | 2022-07-08 | 2022-07-08 | Method for suspended high-stress films on integrated distributed Bragg mirrors |
| PCT/NL2023/050368 WO2024010452A1 (fr) | 2022-07-08 | 2023-07-07 | Procédé de suspension de films à haute contrainte sur des miroirs de bragg distribués intégrés |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2032428A NL2032428B1 (en) | 2022-07-08 | 2022-07-08 | Method for suspended high-stress films on integrated distributed Bragg mirrors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2032428B1 true NL2032428B1 (en) | 2024-01-23 |
Family
ID=82594898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2032428A NL2032428B1 (en) | 2022-07-08 | 2022-07-08 | Method for suspended high-stress films on integrated distributed Bragg mirrors |
Country Status (2)
| Country | Link |
|---|---|
| NL (1) | NL2032428B1 (fr) |
| WO (1) | WO2024010452A1 (fr) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020176473A1 (en) * | 2001-05-23 | 2002-11-28 | Aram Mooradian | Wavelength selectable, controlled chirp, semiconductor laser |
| EP3292078A1 (fr) | 2015-05-05 | 2018-03-14 | The University Of Western Australia | Systèmes microélectromécaniques (mems) et procédés |
-
2022
- 2022-07-08 NL NL2032428A patent/NL2032428B1/en active
-
2023
- 2023-07-07 WO PCT/NL2023/050368 patent/WO2024010452A1/fr unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020176473A1 (en) * | 2001-05-23 | 2002-11-28 | Aram Mooradian | Wavelength selectable, controlled chirp, semiconductor laser |
| EP3292078A1 (fr) | 2015-05-05 | 2018-03-14 | The University Of Western Australia | Systèmes microélectromécaniques (mems) et procédés |
Non-Patent Citations (3)
| Title |
|---|
| HUBER CHRISTIAN ET AL: "Large-aperture Fabry-Perot filters based on silicon/silicon carbonitride distributed Bragg reflectors for the near-infrared", 2017 IEEE SENSORS, IEEE, 29 October 2017 (2017-10-29), pages 1 - 3, XP033281113, DOI: 10.1109/ICSENS.2017.8233879 * |
| SHEPPARD, C. J. R.: "Approximate calculation of the reflection coefficient from a stratified medium", PURE AND APPLIED OPTICS: JOURNAL OF THE EUROPEAN OPTICAL SOCIETY, vol. 4, no. 5, 1995, pages 665 - 669, XP020071307, DOI: 10.1088/0963-9659/4/5/018 |
| STÉPHANE C: "Nanostructure arrays in free-space: optical properties and applications", REPORTS ON PROGRESS IN PHYSICS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 77, no. 12, 26 November 2014 (2014-11-26), pages 126402, XP020273863, ISSN: 0034-4885, [retrieved on 20141126], DOI: 10.1088/0034-4885/77/12/126402 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024010452A1 (fr) | 2024-01-11 |
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