NL2020474A - Lithographic system, euv radiation source, lithographic scanning apparatus and control system - Google Patents
Lithographic system, euv radiation source, lithographic scanning apparatus and control system Download PDFInfo
- Publication number
- NL2020474A NL2020474A NL2020474A NL2020474A NL2020474A NL 2020474 A NL2020474 A NL 2020474A NL 2020474 A NL2020474 A NL 2020474A NL 2020474 A NL2020474 A NL 2020474A NL 2020474 A NL2020474 A NL 2020474A
- Authority
- NL
- Netherlands
- Prior art keywords
- euv radiation
- lithographic
- source
- euv
- radiation beam
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 215
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000005286 illumination Methods 0.000 claims description 55
- 238000000059 patterning Methods 0.000 claims description 34
- 238000001459 lithography Methods 0.000 claims description 8
- 238000009826 distribution Methods 0.000 abstract description 41
- 239000000446 fuel Substances 0.000 description 30
- 230000003287 optical effect Effects 0.000 description 25
- 238000000034 method Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 238000006073 displacement reaction Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 238000012937 correction Methods 0.000 description 10
- 230000036278 prepulse Effects 0.000 description 9
- 230000001143 conditioned effect Effects 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 230000003750 conditioning effect Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 210000001747 pupil Anatomy 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000006399 behavior Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000033772 system development Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP17161855 | 2017-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2020474A true NL2020474A (en) | 2018-09-21 |
Family
ID=58387748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2020474A NL2020474A (en) | 2017-03-20 | 2018-02-22 | Lithographic system, euv radiation source, lithographic scanning apparatus and control system |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN110462522B (zh) |
| NL (1) | NL2020474A (zh) |
| WO (1) | WO2018172012A1 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3647872A1 (en) * | 2018-11-01 | 2020-05-06 | ASML Netherlands B.V. | A method for controlling the dose profile adjustment of a lithographic apparatus |
| CN114945872A (zh) * | 2020-01-14 | 2022-08-26 | Asml荷兰有限公司 | 用于漂移补偿的光刻装置和方法 |
| EP4083570A1 (en) * | 2021-04-29 | 2022-11-02 | ASML Netherlands B.V. | Laser beam metrology system, laser beam system, euv radiation source, and lithographic apparatus |
| EP4330626A1 (en) * | 2021-04-29 | 2024-03-06 | ASML Netherlands B.V. | Laser beam metrology system, laser beam system, euv radiation source, and lithographic apparatus |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002366112A (ja) | 2001-06-07 | 2002-12-20 | Hitachi Ltd | 液晶駆動装置及び液晶表示装置 |
| JP3710443B2 (ja) * | 2002-09-11 | 2005-10-26 | キヤノン株式会社 | ミラー保持装置及び方法、並びに、ミラー交換方法 |
| JP2006501660A (ja) | 2002-09-30 | 2006-01-12 | カール・ツァイス・エスエムティー・アーゲー | 照明の同定用のセンサを備える波長≦１９３ｎｍ用の照明システム |
| US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
| DE102008001511A1 (de) | 2008-04-30 | 2009-11-05 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
| EP2154574B1 (en) * | 2008-08-14 | 2011-12-07 | ASML Netherlands BV | Radiation source and method of generating radiation |
| JP2010123714A (ja) * | 2008-11-19 | 2010-06-03 | Ushio Inc | 極端紫外光光源装置 |
| DE102011016058B4 (de) * | 2011-04-01 | 2012-11-29 | Xtreme Technologies Gmbh | Verfahren und Vorrichtung zur Einstellung von Eigenschaften eines Strahlenbündels aus einem Plasma emittierter hochenergetischer Strahlung |
| NL2009020A (en) * | 2011-07-22 | 2013-01-24 | Asml Netherlands Bv | Radiation source, method of controlling a radiation source, lithographic apparatus, and method for manufacturing a device. |
| US8993976B2 (en) * | 2011-08-19 | 2015-03-31 | Asml Netherlands B.V. | Energy sensors for light beam alignment |
-
2018
- 2018-02-22 CN CN201880019502.5A patent/CN110462522B/zh active Active
- 2018-02-22 NL NL2020474A patent/NL2020474A/en unknown
- 2018-02-22 WO PCT/EP2018/054326 patent/WO2018172012A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CN110462522A (zh) | 2019-11-15 |
| CN110462522B (zh) | 2021-10-08 |
| WO2018172012A1 (en) | 2018-09-27 |
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