NL2020474A - Lithographic system, euv radiation source, lithographic scanning apparatus and control system - Google Patents

Lithographic system, euv radiation source, lithographic scanning apparatus and control system Download PDF

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Publication number
NL2020474A
NL2020474A NL2020474A NL2020474A NL2020474A NL 2020474 A NL2020474 A NL 2020474A NL 2020474 A NL2020474 A NL 2020474A NL 2020474 A NL2020474 A NL 2020474A NL 2020474 A NL2020474 A NL 2020474A
Authority
NL
Netherlands
Prior art keywords
euv radiation
lithographic
source
euv
radiation beam
Prior art date
Application number
NL2020474A
Other languages
English (en)
Inventor
Franciscus Jozephus Noordman Oscar
Gang Tian
Pascal Van Gorkom Ramon
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of NL2020474A publication Critical patent/NL2020474A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Claims (5)

  1. CONCLUSIE
    1. Een lithografieinrichting omvattende:
    een belichtinginrichting ingericht voor het leveren van een stralingsbundel;
    5 een drager geconstrueerd voor het dragen van een patroneerinrichting, welke patroneerinrichting in staat is een patroon aan te brengen in een doorsnede van de stralingsbundel ter vorming van een gepatroneerde stralingsbundel;
    een substraattafel geconstrueerd om een substraat te dragen; en een projectieinrichting ingericht voor het projecteren van de gepatroneerde stralingsbundel op een
    10 doelgebied van het substraat, met het kenmerk, dat de substraattafel is ingericht voor het positioneren van hel doelgebied van het substraat in een brandpuntsvlak van de projectieinrichting.
    1/5 w
    280
  2. 2/5
    AN
  3. 3/5 rfWirf (a?
    5 (b)
  4. 4/5
  5. 5/5 i γ ν
    frig® 5 (d)
    X
NL2020474A 2017-03-20 2018-02-22 Lithographic system, euv radiation source, lithographic scanning apparatus and control system NL2020474A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP17161855 2017-03-20

Publications (1)

Publication Number Publication Date
NL2020474A true NL2020474A (en) 2018-09-21

Family

ID=58387748

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2020474A NL2020474A (en) 2017-03-20 2018-02-22 Lithographic system, euv radiation source, lithographic scanning apparatus and control system

Country Status (3)

Country Link
CN (1) CN110462522B (nl)
NL (1) NL2020474A (nl)
WO (1) WO2018172012A1 (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3647872A1 (en) * 2018-11-01 2020-05-06 ASML Netherlands B.V. A method for controlling the dose profile adjustment of a lithographic apparatus
CN114945872A (zh) * 2020-01-14 2022-08-26 Asml荷兰有限公司 用于漂移补偿的光刻装置和方法
EP4083570A1 (en) * 2021-04-29 2022-11-02 ASML Netherlands B.V. Laser beam metrology system, laser beam system, euv radiation source, and lithographic apparatus
EP4330626A1 (en) * 2021-04-29 2024-03-06 ASML Netherlands B.V. Laser beam metrology system, laser beam system, euv radiation source, and lithographic apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002366112A (ja) 2001-06-07 2002-12-20 Hitachi Ltd 液晶駆動装置及び液晶表示装置
JP3710443B2 (ja) * 2002-09-11 2005-10-26 キヤノン株式会社 ミラー保持装置及び方法、並びに、ミラー交換方法
JP2006501660A (ja) 2002-09-30 2006-01-12 カール・ツァイス・エスエムティー・アーゲー 照明の同定用のセンサを備える波長≦１９３ｎｍ用の照明システム
US7087914B2 (en) * 2004-03-17 2006-08-08 Cymer, Inc High repetition rate laser produced plasma EUV light source
DE102008001511A1 (de) 2008-04-30 2009-11-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
EP2154574B1 (en) * 2008-08-14 2011-12-07 ASML Netherlands BV Radiation source and method of generating radiation
JP2010123714A (ja) * 2008-11-19 2010-06-03 Ushio Inc 極端紫外光光源装置
DE102011016058B4 (de) * 2011-04-01 2012-11-29 Xtreme Technologies Gmbh Verfahren und Vorrichtung zur Einstellung von Eigenschaften eines Strahlenbündels aus einem Plasma emittierter hochenergetischer Strahlung
NL2009020A (en) * 2011-07-22 2013-01-24 Asml Netherlands Bv Radiation source, method of controlling a radiation source, lithographic apparatus, and method for manufacturing a device.
US8993976B2 (en) * 2011-08-19 2015-03-31 Asml Netherlands B.V. Energy sensors for light beam alignment

Also Published As

Publication number Publication date
CN110462522A (zh) 2019-11-15
CN110462522B (zh) 2021-10-08
WO2018172012A1 (en) 2018-09-27

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