NL2012212C2 - Surface boron doped layer of crystalline silicon solar cell with improved surface passivation. - Google Patents
Surface boron doped layer of crystalline silicon solar cell with improved surface passivation. Download PDFInfo
- Publication number
- NL2012212C2 NL2012212C2 NL2012212A NL2012212A NL2012212C2 NL 2012212 C2 NL2012212 C2 NL 2012212C2 NL 2012212 A NL2012212 A NL 2012212A NL 2012212 A NL2012212 A NL 2012212A NL 2012212 C2 NL2012212 C2 NL 2012212C2
- Authority
- NL
- Netherlands
- Prior art keywords
- boron
- layer
- doped
- crystalline silicon
- film
- Prior art date
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims description 203
- 229910052796 boron Inorganic materials 0.000 title claims description 194
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 41
- 238000002161 passivation Methods 0.000 title claims description 39
- 239000010410 layer Substances 0.000 claims description 140
- 238000000034 method Methods 0.000 claims description 75
- 238000009792 diffusion process Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 239000002344 surface layer Substances 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 26
- 230000003647 oxidation Effects 0.000 claims description 26
- 238000007254 oxidation reaction Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000003631 wet chemical etching Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims 4
- 238000005553 drilling Methods 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 238000007598 dipping method Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 25
- 239000005388 borosilicate glass Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 17
- 238000000137 annealing Methods 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000002791 soaking Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910015845 BBr3 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001638 boron Chemical class 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- ZXNKRXWFQRLIQG-UHFFFAOYSA-N silicon(4+);tetraborate Chemical compound [Si+4].[Si+4].[Si+4].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] ZXNKRXWFQRLIQG-UHFFFAOYSA-N 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910003685 SiB4 Inorganic materials 0.000 description 1
- 229910003682 SiB6 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- -1 boron ion Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 239000008207 working material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Claims (20)
1. Werkwijze voor het vervaardigen van een kristallijne silicium zonnecel, omvattende verschaffen van een kristallijn siliciumsubstraat, verschaffen van een met boor gedoteerde oppervlaktelaag in het kristallijn siliciumsubstraat met een piekboordoteringsconcentratie die hoger is dan 8E19cm'3; en verwijderen van een oppervlaktedeel van de met boor gedoteerde laag; en vormen van een passiveringsfilm op de met boor gedoteerde laag; resulterend in een oppervlakteboorconcentratie direct onder de passiveringsfilm die hoger is dan 5E19cm'3.
2. Werkwijze volgens conclusie 1, waarbij het verwijderde oppervlaktedeel van de met boor gedoteerde laag tussen 5-200 nm dik is.
3. Werkwijze volgens conclusie 1 or 2, waarbij de met boor gedoteerde oppervlaktelaag verkregen is met boorionenimplantatie of met thermische diffusiie.
4. Werkwijze volgens één van de conclusies 1-3, waarbij de stap van verkrijgen van de met boor gedoteerde oppervlaktelaag wordt gevolgd door thermische oxidatie.
5. Werkwijze volgens één van de conclusies 1-3, waarbij het oppervlaktedeel een rijke boorlaag omvat, bijvoorbeeld met een boorconcentratie die hoger is dan 2E20cm'3.
6. Werkwijze volgens één van de conclusies 1-5, waarbij verwijderen van het oppervlaktedeel van de met boor gedoteerde laag wordt verkregen door etsen, bijvoorbeeld met gebruik van nat-chemisch etsen of plasmaetsen.
7. Werkwijze volgens één van de conclusies 1-6, waarbij een laagweerstand van de met boor gedoteerde oppervlaktelaag na verwijderen van het oppervlaktedeel van de met boor gedoteerde laag lager is dan 300Ω/α
8. Werkwijze volgens één van de conclusies 1-7, waarbij de passiveringsfilm een dunne siliciumoxidefilm is, verkregen door het dompelen van het kristallijn siliciumsubstraat in een chemische oplossing.
9. Werkwijze volgens conclusie 8, waarbij de dunne siliciumoxidefilm tussen 0.5-10 nm dik is, bijvoorbeeld tussen 0.5-5 nm.
10. Werkwijze volgens conclusie 8 of 9, waarbij de temperatuur van de chemische oplossing voor het vormen van de dunne siliciumoxide op de met boor gedoteerde laag onder 150°C ligt, bijvoorbeeld op kamertemperatuur.
11. Werkwijze volgens één van de conclusies 8-10, waarbij een verdere laag wordt aangebracht op de chemisch geoxideerde dunne siliciumoxide, waarbij de verdere laag een aluminiumoxide (AI2O3) film omvat.
12. Werkwijze volgens één van de conclusies 1-7, waarbij de passiveringsfilm een aluminiumoxide (AI2O3) film is.
13. Werkwijze volgens conclusie 11 of 12, waarbij de aluminiumoxide film wordt gevormd door atomische-laagdepositie.
14. Werkwijze volgens één van de conclusies 1-13, waarbij de met boor gedoteerde oppervlaktelaag een emitterlaag in een silicium zonnecel is.
15. Werkwijze volgens één van de conclusies 1-13, waarbij de met boor gedoteerde oppervlaktelaag een oppervlakteveldlaag aan de achterzijde of aan de voorzijde is in een silicium zonnecel.
16. Werkwijze volgens één van de conclusies 1-15, omvattende de stap van het vormen van een met fosfor gedoteerde laag op het gebied waar geen met boor gedoteerde laag aanwezig is.
17. Werkwijze volgens één van de conclusies 1-16, waarbij een verder laag wordt aangebracht, en de verdere laag een diëlektrische film omvat, bijvoorbeeld een siliciumnitirde film in combinatie met waterstof.
18. Werkwijze volgens één van de conclusies 1-17, waarbij het oppervlakte van het kristallijn siliciumsubstraat van een textur wordt voorzien voorafgaand aan het proces om de met boor gedoteerde oppervlaktelaag te vormen.
19. Een tussenliggende oppervlakteconfiguratie van een kristallijn siliciumsubstraat, waarbij de toplaag van het kristallijn siliciumsubstraat is verkregen met de werkwijze volgens één van de conclusies 1-18.
20. Kristallijne silicium zonnecel vervaardigd met gebruik van de werkwijze volgens één van de conclusies 1-18.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2012212A NL2012212C2 (en) | 2014-02-06 | 2014-02-06 | Surface boron doped layer of crystalline silicon solar cell with improved surface passivation. |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2012212A NL2012212C2 (en) | 2014-02-06 | 2014-02-06 | Surface boron doped layer of crystalline silicon solar cell with improved surface passivation. |
| NL2012212 | 2014-02-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2012212C2 true NL2012212C2 (en) | 2015-08-10 |
Family
ID=50555192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2012212A NL2012212C2 (en) | 2014-02-06 | 2014-02-06 | Surface boron doped layer of crystalline silicon solar cell with improved surface passivation. |
Country Status (1)
| Country | Link |
|---|---|
| NL (1) | NL2012212C2 (nl) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008039067A2 (en) * | 2006-09-25 | 2008-04-03 | Ecn Energieonderzoek Centrum Nederland | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
-
2014
- 2014-02-06 NL NL2012212A patent/NL2012212C2/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008039067A2 (en) * | 2006-09-25 | 2008-04-03 | Ecn Energieonderzoek Centrum Nederland | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
Non-Patent Citations (5)
| Title |
|---|
| ARMIN RICHTER ET AL: "Boron Emitter Passivation With Al2O3 and Al2O3/SiNx Stacks Using ALD Al2O3", IEEE JOURNAL OF PHOTOVOLTAICS, I E E E, US, vol. 3, no. 1, 1 January 2013 (2013-01-01), pages 236 - 245, XP011482201, ISSN: 2156-3381, DOI: 10.1109/JPHOTOV.2012.2226145 * |
| MICHAEL ANDREAS KESSLER ET AL: "Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3 diffusion processes; Charge carrier lifetime degradation in Cz silicon through the formation of a BRL during BBr3 diffusion processes", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, GB, vol. 25, no. 5, 1 May 2010 (2010-05-01), pages 55001, XP020172915, ISSN: 0268-1242 * |
| MÜLLER RALPH ET AL: "Evaluation of implantation annealing for highly-doped selective boron emitters suitable for screen-printed contacts", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 120, 10 July 2013 (2013-07-10), pages 431 - 435, XP028775044, ISSN: 0927-0248, DOI: 10.1016/J.SOLMAT.2013.06.040 * |
| RYU KYUNGSUN ET AL: "Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 101, no. 7, 13 August 2012 (2012-08-13), pages 73902 - 73902, XP012164755, ISSN: 0003-6951, [retrieved on 20120814], DOI: 10.1063/1.4746424 * |
| VETTER M ET AL: "Investigation of the Surface Passivation of P+-Type Si Emitters by PECVD Silicon Carbide Films", CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (IEEE CAT. NO.06CH37747), IEEE, 1 May 2006 (2006-05-01), pages 1271 - 1274, XP031007546, ISBN: 978-1-4244-0016-4 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102939662B (zh) | 太阳能电池元件及其制造方法、以及太阳能电池模块 | |
| NL2023003B1 (en) | Method for preparing full back-contact electrode cell with efficient light trapping and selective doping | |
| CN110352501A (zh) | 制造钝化太阳能电池的方法及所得的钝化太阳能电池 | |
| KR102189279B1 (ko) | 기판에 보론 도핑된 영역을 제공하는 방법 및 이러한 기판을 이용한 태양 전지 | |
| CN103050568A (zh) | 制造光电器件的方法 | |
| JP5737204B2 (ja) | 太陽電池及びその製造方法 | |
| CN102544215A (zh) | 利用激光掺杂加刻蚀制备选择性发射结太阳电池的方法 | |
| JP2013165160A (ja) | 太陽電池の製造方法及び太陽電池 | |
| WO2024221750A1 (zh) | 一种背接触式太阳能电池及其制备方法 | |
| Singh et al. | Fabrication of c-Si solar cells using boric acid as a spin-on dopant for back surface field | |
| US9923116B2 (en) | Method for producing solar cells having simultaneously etched-back doped regions | |
| WO2014092649A1 (en) | A method of manufacturing a photovoltaic cell | |
| CN105122461A (zh) | 太阳能电池的制造方法 | |
| Aurang et al. | Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices | |
| JP5477220B2 (ja) | 太陽電池及びその製造方法 | |
| WO2014196253A1 (ja) | ｐ型選択エミッタ形成方法及び太陽電池 | |
| JP6426486B2 (ja) | 太陽電池素子の製造方法 | |
| TWI650872B (zh) | 太陽能電池及其製造方法、太陽能電池模組及太陽能電池發電系統 | |
| NL2012212C2 (en) | Surface boron doped layer of crystalline silicon solar cell with improved surface passivation. | |
| EP4648113A1 (en) | Interdigital back-contact solar cell and manufacturing method therefor | |
| JP6114205B2 (ja) | 太陽電池の製造方法 | |
| JP5494511B2 (ja) | 太陽電池の製造方法 | |
| Kim et al. | Laser etch back process to fabricate highly efficient selective emitter c-Si solar cells | |
| CN107507886A (zh) | 背表面黑硅和氧化铝钝化协同增强型单晶硅电池的制备方法 | |
| CN106784033A (zh) | 一种晶体硅太阳能电池及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLED | Pledge established |
Effective date: 20150116 |
|
| MM | Lapsed because of non-payment of the annual fee |
Effective date: 20170301 |