NL2009352A - Radiation source. - Google Patents

Radiation source. Download PDF

Info

Publication number
NL2009352A
NL2009352A NL2009352A NL2009352A NL2009352A NL 2009352 A NL2009352 A NL 2009352A NL 2009352 A NL2009352 A NL 2009352A NL 2009352 A NL2009352 A NL 2009352A NL 2009352 A NL2009352 A NL 2009352A
Authority
NL
Netherlands
Prior art keywords
radiation
collector
fuel
direct
laser radiation
Prior art date
Application number
NL2009352A
Other languages
English (en)
Dutch (nl)
Inventor
Jan Schoot
Vadim Banine
Andrei Yakunin
Hermanus Kreuwel
Johannes Moors
Olav Waldemar Vladimir Frijns
Gerardus Swinkels
Uwe Stamm
Ivo Vanderhallen
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of NL2009352A publication Critical patent/NL2009352A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0088—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam for preconditioning the plasma generating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL2009352A 2011-09-22 2012-08-23 Radiation source. NL2009352A (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US201161538006P 2011-09-22 2011-09-22
US201161538006 2011-09-22
US201261606715P 2012-03-05 2012-03-05
US201261606715 2012-03-05
US201261635758P 2012-04-19 2012-04-19
US201261635758 2012-04-19
US201261668474P 2012-07-06 2012-07-06
US201261668474 2012-07-06

Publications (1)

Publication Number Publication Date
NL2009352A true NL2009352A (en) 2013-03-25

Family

ID=46724440

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2009352A NL2009352A (en) 2011-09-22 2012-08-23 Radiation source.

Country Status (5)

Country Link
US (1) US9632419B2 (enExample)
JP (1) JP6122853B2 (enExample)
NL (1) NL2009352A (enExample)
TW (1) TW201316842A (enExample)
WO (1) WO2013041323A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014154433A1 (en) * 2013-03-27 2014-10-02 Asml Netherlands B.V. Radiation collector, radiation source and lithographic apparatus
CN113396644A (zh) * 2019-02-08 2021-09-14 Asml荷兰有限公司 辐射系统

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013204444A1 (de) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Beleuchtungsoptik für ein Maskeninspektionssystem sowie Maskeninspektionssystem mit einer derartigen Beleuchtungsoptik
NL2014179A (en) * 2014-02-24 2015-08-25 Asml Netherlands Bv Lithographic system.
US9826615B2 (en) * 2015-09-22 2017-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. EUV collector with orientation to avoid contamination
US20170311429A1 (en) 2016-04-25 2017-10-26 Asml Netherlands B.V. Reducing the effect of plasma on an object in an extreme ultraviolet light source
US10149375B2 (en) * 2016-09-14 2018-12-04 Asml Netherlands B.V. Target trajectory metrology in an extreme ultraviolet light source
US11150559B2 (en) 2019-12-30 2021-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Laser interference fringe control for higher EUV light source and EUV throughput
WO2022008145A1 (en) * 2020-07-06 2022-01-13 Asml Netherlands B.V. Systems and methods for laser-to-droplet alignment
CN116195369B (zh) * 2020-09-04 2024-10-18 Isteq私人有限公司 具有多段式集光器模块的短波长辐射源和辐射收集方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928416B2 (en) * 2006-12-22 2011-04-19 Cymer, Inc. Laser produced plasma EUV light source
US7439530B2 (en) 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
US6973164B2 (en) * 2003-06-26 2005-12-06 University Of Central Florida Research Foundation, Inc. Laser-produced plasma EUV light source with pre-pulse enhancement
JP2008270149A (ja) * 2007-03-28 2008-11-06 Tokyo Institute Of Technology 極端紫外光光源装置および極端紫外光発生方法
EP1976344B1 (en) * 2007-03-28 2011-04-20 Tokyo Institute Of Technology Extreme ultraviolet light source device and extreme ultraviolet radiation generating method
EP2083328B1 (en) 2008-01-28 2013-06-19 Media Lario s.r.l. Grazing incidence collector for laser produced plasma sources
EP2159638B1 (en) * 2008-08-26 2015-06-17 ASML Netherlands BV Radiation source and lithographic apparatus
JP2010103499A (ja) 2008-09-29 2010-05-06 Komatsu Ltd 極端紫外光源装置および極端紫外光生成方法
US8436328B2 (en) 2008-12-16 2013-05-07 Gigaphoton Inc. Extreme ultraviolet light source apparatus
NL2004417A (en) * 2009-04-22 2010-10-26 Asml Netherlands Bv Lithographic radiation source, collector, apparatus and method.
NL2004837A (en) * 2009-07-09 2011-01-10 Asml Netherlands Bv Radiation system and lithographic apparatus.
DE102009047712A1 (de) 2009-12-09 2011-06-16 Carl Zeiss Smt Gmbh EUV-Lichtquelle für eine Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
US8330131B2 (en) 2010-01-11 2012-12-11 Media Lario, S.R.L. Source-collector module with GIC mirror and LPP EUV light source
JP5722061B2 (ja) 2010-02-19 2015-05-20 ギガフォトン株式会社 極端紫外光源装置及び極端紫外光の発生方法
US9265136B2 (en) 2010-02-19 2016-02-16 Gigaphoton Inc. System and method for generating extreme ultraviolet light
US8643823B2 (en) 2010-02-23 2014-02-04 Media Lario S.R.L. Stress-decoupling devices and methods for cooled mirror systems
WO2013029906A1 (en) * 2011-09-02 2013-03-07 Asml Netherlands B.V. Radiation source
NL2010274C2 (en) * 2012-02-11 2015-02-26 Media Lario Srl Source-collector modules for euv lithography employing a gic mirror and a lpp source.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014154433A1 (en) * 2013-03-27 2014-10-02 Asml Netherlands B.V. Radiation collector, radiation source and lithographic apparatus
US9983482B2 (en) 2013-03-27 2018-05-29 Asml Netherlands B.V. Radiation collector, radiation source and lithographic apparatus
CN113396644A (zh) * 2019-02-08 2021-09-14 Asml荷兰有限公司 辐射系统

Also Published As

Publication number Publication date
US9632419B2 (en) 2017-04-25
JP6122853B2 (ja) 2017-04-26
US20140253894A1 (en) 2014-09-11
TW201316842A (zh) 2013-04-16
JP2014528146A (ja) 2014-10-23
WO2013041323A1 (en) 2013-03-28

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Date Code Title Description
WDAP Patent application withdrawn

Effective date: 20130724