NL198572A - - Google Patents
Info
- Publication number
- NL198572A NL198572A NL198572DA NL198572A NL 198572 A NL198572 A NL 198572A NL 198572D A NL198572D A NL 198572DA NL 198572 A NL198572 A NL 198572A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES40182A DE1032853B (de) | 1954-07-27 | 1954-07-27 | Verfahren zur Herstellung von Legierungskontakten auf einem Halbleitergrundkoerper aus Silizium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL198572A true NL198572A (fr) |
Family
ID=7483566
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL198572D NL198572A (fr) | 1954-07-27 | ||
| NL92927D NL92927C (fr) | 1954-07-27 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL92927D NL92927C (fr) | 1954-07-27 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2831787A (fr) |
| DE (1) | DE1032853B (fr) |
| FR (1) | FR1137399A (fr) |
| GB (1) | GB795478A (fr) |
| NL (2) | NL92927C (fr) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2930949A (en) * | 1956-09-25 | 1960-03-29 | Philco Corp | Semiconductive device and method of fabrication thereof |
| US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
| US2985550A (en) * | 1957-01-04 | 1961-05-23 | Texas Instruments Inc | Production of high temperature alloyed semiconductors |
| US3211970A (en) * | 1957-05-06 | 1965-10-12 | Rca Corp | Semiconductor devices |
| NL230567A (fr) * | 1957-08-16 | |||
| GB849477A (en) * | 1957-09-23 | 1960-09-28 | Nat Res Dev | Improvements in or relating to semiconductor control devices |
| US3111611A (en) * | 1957-09-24 | 1963-11-19 | Ibm | Graded energy gap semiconductor devices |
| US2985805A (en) * | 1958-03-05 | 1961-05-23 | Rca Corp | Semiconductor devices |
| US2937323A (en) * | 1958-05-29 | 1960-05-17 | Westinghouse Electric Corp | Fused junctions in silicon carbide |
| NL107889C (fr) * | 1958-08-26 | |||
| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ | |
| GB945747A (fr) * | 1959-02-06 | Texas Instruments Inc | ||
| GB936181A (en) * | 1959-05-19 | 1963-09-04 | Nat Res Dev | Improvements in and relating to solid-state electrical devices |
| DE1102250B (de) * | 1959-11-13 | 1961-03-16 | Licentia Gmbh | Verfahren zur Kontaktierung von Halbleiterbauelementen, insbesondere Thermoelementen |
| NL260481A (fr) * | 1960-02-08 | |||
| US3176204A (en) * | 1960-12-22 | 1965-03-30 | Raytheon Co | Device composed of different semiconductive materials |
| US3200490A (en) * | 1962-12-07 | 1965-08-17 | Philco Corp | Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials |
| NL302497A (fr) * | 1962-12-31 | |||
| US3381183A (en) * | 1965-06-21 | 1968-04-30 | Rca Corp | High power multi-emitter transistor |
| DE1514562B2 (de) * | 1965-09-07 | 1972-12-07 | Semikron Gesellschaft fur Gleich richterbau und Elektronik mbH, 8500 Nurn berg | Anordnung zur herstellung eines halbleiter-bauelementes |
| US3458777A (en) * | 1966-09-21 | 1969-07-29 | Hughes Aircraft Co | Pin diode with a non-uniform intrinsic region width |
| US3448354A (en) * | 1967-01-20 | 1969-06-03 | Rca Corp | Semiconductor device having increased resistance to second breakdown |
| DE1539332B2 (de) * | 1967-03-21 | 1971-02-04 | Siemens AG, 1000 Berlin u 8000 München | Kontaktstück zur Kontaktierung von Thermoelementschenkeln in Thermogenerato ren |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL84061C (fr) * | 1948-06-26 |
-
0
- US US2831787D patent/US2831787A/en not_active Expired - Lifetime
- NL NL198572D patent/NL198572A/xx unknown
- NL NL92927D patent/NL92927C/xx active
-
1954
- 1954-07-27 DE DES40182A patent/DE1032853B/de active Pending
-
1955
- 1955-07-07 FR FR1137399D patent/FR1137399A/fr not_active Expired
- 1955-07-25 GB GB21460/55A patent/GB795478A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1032853B (de) | 1958-06-26 |
| GB795478A (en) | 1958-05-21 |
| NL92927C (fr) | |
| US2831787A (en) | 1958-04-22 |
| FR1137399A (fr) | 1957-05-28 |