NL191964C - Method for manufacturing a load resistor with a high resistance value. - Google Patents

Method for manufacturing a load resistor with a high resistance value.

Info

Publication number
NL191964C
NL191964C NL9001108A NL9001108A NL191964C NL 191964 C NL191964 C NL 191964C NL 9001108 A NL9001108 A NL 9001108A NL 9001108 A NL9001108 A NL 9001108A NL 191964 C NL191964 C NL 191964C
Authority
NL
Netherlands
Prior art keywords
manufacturing
resistance value
high resistance
load resistor
resistor
Prior art date
Application number
NL9001108A
Other languages
Dutch (nl)
Other versions
NL9001108A (en
NL191964B (en
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL9001108A publication Critical patent/NL9001108A/en
Publication of NL191964B publication Critical patent/NL191964B/en
Application granted granted Critical
Publication of NL191964C publication Critical patent/NL191964C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL9001108A 1990-05-09 1990-05-09 Method for manufacturing a load resistor with a high resistance value. NL191964C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4014862 1990-05-09
DE4014862A DE4014862A1 (en) 1990-05-09 1990-05-09 Mfg. high ohmic working resistance - applying two oxide layers to substrate with intermediate poly:silicon layer

Publications (3)

Publication Number Publication Date
NL9001108A NL9001108A (en) 1991-12-02
NL191964B NL191964B (en) 1996-07-01
NL191964C true NL191964C (en) 1996-11-04

Family

ID=6406027

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9001108A NL191964C (en) 1990-05-09 1990-05-09 Method for manufacturing a load resistor with a high resistance value.

Country Status (2)

Country Link
DE (1) DE4014862A1 (en)
NL (1) NL191964C (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4408385A (en) * 1978-06-15 1983-10-11 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4358340A (en) * 1980-07-14 1982-11-09 Texas Instruments Incorporated Submicron patterning without using submicron lithographic technique
US4654680A (en) * 1980-09-24 1987-03-31 Semiconductor Energy Laboratory Co., Ltd. Sidewall gate IGFET
JPS59181660A (en) * 1983-03-31 1984-10-16 Fujitsu Ltd Manufacture of semiconductor memory device
JPS59201463A (en) * 1983-04-30 1984-11-15 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
DE4014862A1 (en) 1991-11-14
NL9001108A (en) 1991-12-02
NL191964B (en) 1996-07-01

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Legal Events

Date Code Title Description
A1C A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee

Effective date: 20061201