NL191964C - Method for manufacturing a load resistor with a high resistance value. - Google Patents
Method for manufacturing a load resistor with a high resistance value.Info
- Publication number
- NL191964C NL191964C NL9001108A NL9001108A NL191964C NL 191964 C NL191964 C NL 191964C NL 9001108 A NL9001108 A NL 9001108A NL 9001108 A NL9001108 A NL 9001108A NL 191964 C NL191964 C NL 191964C
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- resistance value
- high resistance
- load resistor
- resistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4014862 | 1990-05-09 | ||
DE4014862A DE4014862A1 (en) | 1990-05-09 | 1990-05-09 | Mfg. high ohmic working resistance - applying two oxide layers to substrate with intermediate poly:silicon layer |
Publications (3)
Publication Number | Publication Date |
---|---|
NL9001108A NL9001108A (en) | 1991-12-02 |
NL191964B NL191964B (en) | 1996-07-01 |
NL191964C true NL191964C (en) | 1996-11-04 |
Family
ID=6406027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL9001108A NL191964C (en) | 1990-05-09 | 1990-05-09 | Method for manufacturing a load resistor with a high resistance value. |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE4014862A1 (en) |
NL (1) | NL191964C (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4408385A (en) * | 1978-06-15 | 1983-10-11 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
US4358340A (en) * | 1980-07-14 | 1982-11-09 | Texas Instruments Incorporated | Submicron patterning without using submicron lithographic technique |
US4654680A (en) * | 1980-09-24 | 1987-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Sidewall gate IGFET |
JPS59181660A (en) * | 1983-03-31 | 1984-10-16 | Fujitsu Ltd | Manufacture of semiconductor memory device |
JPS59201463A (en) * | 1983-04-30 | 1984-11-15 | Toshiba Corp | Semiconductor device |
-
1990
- 1990-05-09 NL NL9001108A patent/NL191964C/en not_active IP Right Cessation
- 1990-05-09 DE DE4014862A patent/DE4014862A1/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
NL9001108A (en) | 1991-12-02 |
DE4014862A1 (en) | 1991-11-14 |
NL191964B (en) | 1996-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1C | A request for examination has been filed | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20061201 |