NL190774A - - Google Patents

Info

Publication number
NL190774A
NL190774A NL190774DA NL190774A NL 190774 A NL190774 A NL 190774A NL 190774D A NL190774D A NL 190774DA NL 190774 A NL190774 A NL 190774A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL190774A publication Critical patent/NL190774A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10P14/263
    • H10P14/265
    • H10P14/3221
    • H10P14/3421
    • H10P14/3444
    • H10P14/3446
    • H10P50/646

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL190774D 1971-06-18 NL190774A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15455371A 1971-06-18 1971-06-18

Publications (1)

Publication Number Publication Date
NL190774A true NL190774A (enExample)

Family

ID=22551786

Family Applications (2)

Application Number Title Priority Date Filing Date
NL190774D NL190774A (enExample) 1971-06-18
NLAANVRAGE7208261,A NL176379C (nl) 1971-06-18 1972-06-16 Werkwijze voor het op een substraat van monokristallijn halfgeleidermateriaal afzetten van monokristallijn halfgeleidermateriaal met een kristalrooster dat vrijwel overeenkomt met het kristalrooster van het halfgeleidermateriaal van het substraat.

Family Applications After (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7208261,A NL176379C (nl) 1971-06-18 1972-06-16 Werkwijze voor het op een substraat van monokristallijn halfgeleidermateriaal afzetten van monokristallijn halfgeleidermateriaal met een kristalrooster dat vrijwel overeenkomt met het kristalrooster van het halfgeleidermateriaal van het substraat.

Country Status (8)

Country Link
US (1) US3692593A (enExample)
JP (1) JPS5132530B1 (enExample)
CA (1) CA955832A (enExample)
DE (1) DE2227883C2 (enExample)
FR (1) FR2142010B1 (enExample)
GB (1) GB1375269A (enExample)
IT (1) IT955495B (enExample)
NL (2) NL176379C (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3727115A (en) * 1972-03-24 1973-04-10 Ibm Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous
NL7306004A (enExample) * 1973-05-01 1974-11-05
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
JPS5329508B2 (enExample) * 1974-03-27 1978-08-21
US4008106A (en) * 1975-11-13 1977-02-15 The United States Of America As Represented By The Secretary Of The Army Method of fabricating III-V photocathodes
US4273609A (en) * 1978-10-25 1981-06-16 Sperry Corporation Rinse melt for LPE crystals
US4233090A (en) * 1979-06-28 1980-11-11 Rca Corporation Method of making a laser diode
US4373989A (en) * 1981-11-30 1983-02-15 Beggs James M Administrator Of Controlled in situ etch-back
DE3345214A1 (de) * 1983-12-14 1985-06-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode
US5185288A (en) * 1988-08-26 1993-02-09 Hewlett-Packard Company Epitaxial growth method
KR900013612A (ko) * 1989-02-17 1990-09-05 프레데릭 얀 스미트 두 물체의 연결 방법 및 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3429756A (en) * 1965-02-05 1969-02-25 Monsanto Co Method for the preparation of inorganic single crystal and polycrystalline electronic materials
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase

Also Published As

Publication number Publication date
US3692593A (en) 1972-09-19
NL176379C (nl) 1985-04-01
CA955832A (en) 1974-10-08
FR2142010A1 (enExample) 1973-01-26
NL7208261A (enExample) 1972-12-20
GB1375269A (enExample) 1974-11-27
IT955495B (it) 1973-09-29
DE2227883C2 (de) 1983-11-24
JPS5132530B1 (enExample) 1976-09-13
DE2227883A1 (de) 1972-12-21
FR2142010B1 (enExample) 1977-12-23

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