NL178893B - Bandweefgetouw met een inslagnaald voor verschillende inslagdraden. - Google Patents

Bandweefgetouw met een inslagnaald voor verschillende inslagdraden.

Info

Publication number
NL178893B
NL178893B NLAANVRAGE7400769,A NL178893DA NL178893B NL 178893 B NL178893 B NL 178893B NL 178893D A NL178893D A NL 178893DA NL 178893 B NL178893 B NL 178893B
Authority
NL
Netherlands
Prior art keywords
weft
needle
different
threads
belt loom
Prior art date
Application number
NLAANVRAGE7400769,A
Other languages
English (en)
Dutch (nl)
Original Assignee
Brevitex Ets Exploit
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL178893B publication Critical patent/NL178893B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/222—Lithium-drift
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive
NLAANVRAGE7400769,A 1952-11-14 Bandweefgetouw met een inslagnaald voor verschillende inslagdraden. NL178893B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US320359A US2725315A (en) 1952-11-14 1952-11-14 Method of fabricating semiconductive bodies

Publications (1)

Publication Number Publication Date
NL178893B true NL178893B (nl)

Family

ID=23246059

Family Applications (2)

Application Number Title Priority Date Filing Date
NLAANVRAGE7400769,A NL178893B (nl) 1952-11-14 Bandweefgetouw met een inslagnaald voor verschillende inslagdraden.
NL87620D NL87620C (de) 1952-11-14

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL87620D NL87620C (de) 1952-11-14

Country Status (7)

Country Link
US (1) US2725315A (de)
BE (1) BE524233A (de)
CH (1) CH317678A (de)
DE (1) DE949512C (de)
FR (1) FR1079960A (de)
GB (1) GB734255A (de)
NL (2) NL87620C (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2836522A (en) * 1952-11-15 1958-05-27 Rca Corp Junction type semiconductor device and method of its manufacture
US2823148A (en) * 1953-03-02 1958-02-11 Rca Corp Method for removing portions of semiconductor device electrodes
BE529698A (de) * 1953-06-19
US2836520A (en) * 1953-08-17 1958-05-27 Westinghouse Electric Corp Method of making junction transistors
BE531626A (de) * 1953-09-04
US2861017A (en) * 1953-09-30 1958-11-18 Honeywell Regulator Co Method of preparing semi-conductor devices
US2918719A (en) * 1953-12-30 1959-12-29 Rca Corp Semi-conductor devices and methods of making them
US2907969A (en) * 1954-02-19 1959-10-06 Westinghouse Electric Corp Photoelectric device
US3010857A (en) * 1954-03-01 1961-11-28 Rca Corp Semi-conductor devices and methods of making same
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions
US2859141A (en) * 1954-04-30 1958-11-04 Raytheon Mfg Co Method for making a semiconductor junction
US2936256A (en) * 1954-06-01 1960-05-10 Gen Electric Semiconductor devices
BE542380A (de) * 1954-10-29
US2885609A (en) * 1955-01-31 1959-05-05 Philco Corp Semiconductive device and method for the fabrication thereof
NL107344C (de) * 1955-03-23
US2981645A (en) * 1955-04-22 1961-04-25 Ibm Semiconductor device fabrication
US2817609A (en) * 1955-06-24 1957-12-24 Hughes Aircraft Co Alkali metal alloy agents for autofluxing in junction forming
US2829993A (en) * 1955-06-24 1958-04-08 Hughes Aircraft Co Process for making fused junction semiconductor devices with alkali metalgallium alloy
US2767085A (en) * 1955-07-01 1956-10-16 Rca Corp Indium-gold amalgams
US3062690A (en) * 1955-08-05 1962-11-06 Hoffman Electronics Corp Semi-conductor device and method of making the same
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
US2856320A (en) * 1955-09-08 1958-10-14 Ibm Method of making transistor with welded collector
US2835613A (en) * 1955-09-13 1958-05-20 Philips Corp Method of surface-treating semi-conductors
US2833678A (en) * 1955-09-27 1958-05-06 Rca Corp Methods of surface alloying with aluminum-containing solder
NL121810C (de) * 1955-11-04
US3001112A (en) * 1956-01-19 1961-09-19 Orbitec Corp Transistor and method of making same
US2950220A (en) * 1956-03-13 1960-08-23 Battelle Development Corp Preparation of p-n junctions by the decomposition of compounds
US2819990A (en) * 1956-04-26 1958-01-14 Bell Telephone Labor Inc Treatment of semiconductive bodies
NL112167C (de) * 1956-05-15
BE563189A (de) * 1956-06-08
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
US2862840A (en) * 1956-09-26 1958-12-02 Gen Electric Semiconductor devices
US3227876A (en) * 1956-12-03 1966-01-04 Hoffman Electronics Corp Neutron detecting solid state device or the like
NL227871A (de) * 1957-05-21
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
US3109938A (en) * 1958-03-19 1963-11-05 Rauland Corp Semi-conductor device having a gas-discharge type switching characteristic
NL238556A (de) * 1958-04-24
US3016313A (en) * 1958-05-15 1962-01-09 Gen Electric Semiconductor devices and methods of making the same
US2978367A (en) * 1958-05-26 1961-04-04 Rca Corp Introduction of barrier in germanium crystals
DE1130079B (de) * 1958-10-24 1962-05-24 Texas Instruments Inc Halbleiterbauelement zum Schalten mit einem Halbleiterkoerper aus drei Zonen abwechselnden Leitfaehigkeitstyps
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
US3085981A (en) * 1960-03-25 1963-04-16 Bell Telephone Labor Inc Ferrimagnetic crystals
GB1025111A (en) * 1962-02-02 1966-04-06 Ass Elect Ind Improvements relating to solid state radiation detectors
NL297288A (de) * 1962-08-31
DE1249415B (de) * 1963-03-06 1900-01-01
GB1054331A (de) * 1963-05-16
US3248345A (en) * 1963-10-01 1966-04-26 Ibm Electrical resistance compositions, elements and methods of making same
US3303070A (en) * 1964-04-22 1967-02-07 Westinghouse Electric Corp Simulataneous double diffusion process
US3462311A (en) * 1966-05-20 1969-08-19 Globe Union Inc Semiconductor device having improved resistance to radiation damage
US3836399A (en) * 1970-02-16 1974-09-17 Texas Instruments Inc PHOTOVOLTAIC DIODE WITH FIRST IMPURITY OF Cu AND SECOND OF Cd, Zn, OR Hg

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
US2617865A (en) * 1948-06-17 1952-11-11 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
US2560594A (en) * 1948-09-24 1951-07-17 Bell Telephone Labor Inc Semiconductor translator and method of making it
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device

Also Published As

Publication number Publication date
GB734255A (en) 1955-07-27
US2725315A (en) 1955-11-29
CH317678A (fr) 1956-11-30
FR1079960A (fr) 1954-12-06
DE949512C (de) 1956-09-20
NL87620C (de)
BE524233A (de)

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