NL162252C - Halfgeleiderinrichting, waarvan de stroomspannings- karakteristiek een gedeelte met negatieve weerstand bevat. - Google Patents
Halfgeleiderinrichting, waarvan de stroomspannings- karakteristiek een gedeelte met negatieve weerstand bevat.Info
- Publication number
- NL162252C NL162252C NL6800243.A NL6800243A NL162252C NL 162252 C NL162252 C NL 162252C NL 6800243 A NL6800243 A NL 6800243A NL 162252 C NL162252 C NL 162252C
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor device
- current voltage
- voltage characteristics
- negative resistance
- resistance section
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60911367A | 1967-01-13 | 1967-01-13 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL6800243A NL6800243A (fr) | 1968-07-15 |
| NL162252B NL162252B (nl) | 1979-11-15 |
| NL162252C true NL162252C (nl) | 1980-04-15 |
Family
ID=24439392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6800243.A NL162252C (nl) | 1967-01-13 | 1968-01-08 | Halfgeleiderinrichting, waarvan de stroomspannings- karakteristiek een gedeelte met negatieve weerstand bevat. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3569799A (fr) |
| BE (1) | BE707510A (fr) |
| CH (1) | CH479164A (fr) |
| DE (1) | DE1639259C3 (fr) |
| FR (1) | FR1548851A (fr) |
| GB (1) | GB1141980A (fr) |
| NL (1) | NL162252C (fr) |
| SE (1) | SE365654B (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3831185A (en) * | 1973-04-25 | 1974-08-20 | Sperry Rand Corp | Controlled inversion bistable switching diode |
| US3831186A (en) * | 1973-04-25 | 1974-08-20 | Sperry Rand Corp | Controlled inversion bistable switching diode device employing barrier emitters |
| JPS5462787A (en) * | 1977-10-28 | 1979-05-21 | Agency Of Ind Science & Technol | Semiconductor device and integrated circuit of the same |
| JPS5681972A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Mos type field effect transistor |
| DE3040872A1 (de) * | 1980-10-30 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Transistor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL224962A (fr) * | 1958-02-15 | |||
| US3207962A (en) * | 1959-01-02 | 1965-09-21 | Transitron Electronic Corp | Semiconductor device having turn on and turn off gain |
| US3060327A (en) * | 1959-07-02 | 1962-10-23 | Bell Telephone Labor Inc | Transistor having emitter reversebiased beyond breakdown and collector forward-biased for majority carrier operation |
| NL265382A (fr) * | 1960-03-08 | |||
| US3045129A (en) * | 1960-12-08 | 1962-07-17 | Bell Telephone Labor Inc | Semiconductor tunnel device |
-
1967
- 1967-01-13 US US609113A patent/US3569799A/en not_active Expired - Lifetime
- 1967-12-04 BE BE707510D patent/BE707510A/xx unknown
- 1967-12-07 FR FR1548851D patent/FR1548851A/fr not_active Expired
- 1967-12-20 GB GB57988/67A patent/GB1141980A/en not_active Expired
-
1968
- 1968-01-03 DE DE1639259A patent/DE1639259C3/de not_active Expired
- 1968-01-08 NL NL6800243.A patent/NL162252C/xx active
- 1968-01-08 CH CH20768A patent/CH479164A/de not_active IP Right Cessation
- 1968-01-12 SE SE00412/68A patent/SE365654B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3569799A (en) | 1971-03-09 |
| SE365654B (fr) | 1974-03-25 |
| CH479164A (de) | 1969-09-30 |
| DE1639259C3 (de) | 1978-10-05 |
| FR1548851A (fr) | 1968-12-06 |
| NL6800243A (fr) | 1968-07-15 |
| DE1639259B2 (de) | 1978-02-23 |
| DE1639259A1 (de) | 1971-02-04 |
| GB1141980A (en) | 1969-02-05 |
| NL162252B (nl) | 1979-11-15 |
| BE707510A (fr) | 1968-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| VJC | Lapsed due to non-payment of the due maintenance fee for the patent or patent application |