NL151215B - Halfgeleiderinrichting voor het omzetten van mechanische signalen in elektrische signalen. - Google Patents

Halfgeleiderinrichting voor het omzetten van mechanische signalen in elektrische signalen.

Info

Publication number
NL151215B
NL151215B NL686818608A NL6818608A NL151215B NL 151215 B NL151215 B NL 151215B NL 686818608 A NL686818608 A NL 686818608A NL 6818608 A NL6818608 A NL 6818608A NL 151215 B NL151215 B NL 151215B
Authority
NL
Netherlands
Prior art keywords
signals
semi
conductor device
converting mechanical
electrical signals
Prior art date
Application number
NL686818608A
Other languages
English (en)
Other versions
NL6818608A (nl
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of NL6818608A publication Critical patent/NL6818608A/xx
Publication of NL151215B publication Critical patent/NL151215B/nl

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/038—Diffusions-staged
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
NL686818608A 1967-12-27 1968-12-24 Halfgeleiderinrichting voor het omzetten van mechanische signalen in elektrische signalen. NL151215B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22968 1967-12-27

Publications (2)

Publication Number Publication Date
NL6818608A NL6818608A (nl) 1969-07-01
NL151215B true NL151215B (nl) 1976-10-15

Family

ID=11468117

Family Applications (1)

Application Number Title Priority Date Filing Date
NL686818608A NL151215B (nl) 1967-12-27 1968-12-24 Halfgeleiderinrichting voor het omzetten van mechanische signalen in elektrische signalen.

Country Status (5)

Country Link
US (1) US3808473A (nl)
DE (1) DE1816683C3 (nl)
FR (1) FR1601518A (nl)
GB (1) GB1250020A (nl)
NL (1) NL151215B (nl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA920280A (en) * 1970-11-16 1973-01-30 Omron Tateisi Electronics Co. Semiconductive transducer
US3886799A (en) * 1973-09-24 1975-06-03 Nat Semiconductor Corp Semiconductor pressure transducer employing temperature compensation circuits and novel heater circuitry
JPS5814997B2 (ja) * 1977-07-20 1983-03-23 セイコーインスツルメンツ株式会社 デジタル電子時計の時刻修正装置
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
DE2932956A1 (de) * 1979-08-14 1981-02-26 Siemens Ag Piezoresistive sonde
US4429413A (en) * 1981-07-30 1984-01-31 Siemens Corporation Fingerprint sensor
US5384477A (en) * 1993-03-09 1995-01-24 National Semiconductor Corporation CMOS latchup suppression by localized minority carrier lifetime reduction

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1055418A (en) * 1964-11-12 1967-01-18 Standard Telephones Cables Ltd Improvements in or relating to electro-mechanical transducers
US3397450A (en) * 1964-01-31 1968-08-20 Fairchild Camera Instr Co Method of forming a metal rectifying contact to semiconductor material by displacement plating
US3463975A (en) * 1964-12-31 1969-08-26 Texas Instruments Inc Unitary semiconductor high speed switching device utilizing a barrier diode
US3443041A (en) * 1965-06-28 1969-05-06 Bell Telephone Labor Inc Surface-barrier diode transducer using high dielectric semiconductor material
US3615929A (en) * 1965-07-08 1971-10-26 Texas Instruments Inc Method of forming epitaxial region of predetermined thickness and article of manufacture
GB1155978A (en) * 1965-10-28 1969-06-25 Matsushita Electric Ind Co Ltd Pressure-Responsive Semiconductor Device.
US3518508A (en) * 1965-12-10 1970-06-30 Matsushita Electric Ind Co Ltd Transducer
US3461324A (en) * 1967-07-03 1969-08-12 Sylvania Electric Prod Semiconductor device employing punchthrough

Also Published As

Publication number Publication date
DE1816683C3 (de) 1978-05-11
DE1816683B2 (de) 1971-12-09
DE1816683A1 (de) 1970-01-15
NL6818608A (nl) 1969-07-01
US3808473A (en) 1974-04-30
FR1601518A (nl) 1970-08-24
GB1250020A (en) 1971-10-20

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