DE1962403B2 - Verzoegerungseinrichtung fuer elektrische signale - Google Patents

Verzoegerungseinrichtung fuer elektrische signale

Info

Publication number
DE1962403B2
DE1962403B2 DE19691962403 DE1962403A DE1962403B2 DE 1962403 B2 DE1962403 B2 DE 1962403B2 DE 19691962403 DE19691962403 DE 19691962403 DE 1962403 A DE1962403 A DE 1962403A DE 1962403 B2 DE1962403 B2 DE 1962403B2
Authority
DE
Germany
Prior art keywords
electrical signals
delay device
delay
signals
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19691962403
Other languages
English (en)
Other versions
DE1962403A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE1962403A1 publication Critical patent/DE1962403A1/de
Publication of DE1962403B2 publication Critical patent/DE1962403B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8126Thin film MESFET's
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8124Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with multiple gate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/30Time-delay networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
DE19691962403 1968-12-20 1969-12-12 Verzoegerungseinrichtung fuer elektrische signale Withdrawn DE1962403B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1909568A CH477779A (de) 1968-12-20 1968-12-20 Verzögerungseinrichtung für elektrische Signale

Publications (2)

Publication Number Publication Date
DE1962403A1 DE1962403A1 (de) 1970-07-16
DE1962403B2 true DE1962403B2 (de) 1971-09-30

Family

ID=4437331

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691962403 Withdrawn DE1962403B2 (de) 1968-12-20 1969-12-12 Verzoegerungseinrichtung fuer elektrische signale

Country Status (5)

Country Link
US (1) US3634702A (de)
CH (1) CH477779A (de)
DE (1) DE1962403B2 (de)
FR (1) FR2026617B1 (de)
GB (1) GB1279320A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700976A (en) * 1970-11-02 1972-10-24 Hughes Aircraft Co Insulated gate field effect transistor adapted for microwave applications
US3911382A (en) * 1972-07-07 1975-10-07 Licentia Gmbh Tuneable delay line
US4040168A (en) * 1975-11-24 1977-08-09 Rca Corporation Fabrication method for a dual gate field-effect transistor
US4104673A (en) * 1977-02-07 1978-08-01 Westinghouse Electric Corp. Field effect pentode transistor
FR2502422A1 (fr) * 1981-03-17 1982-09-24 Thomson Csf Demodulateur d'un signal module en frequence et systeme de television comportant un tel demodulateur
US4587541A (en) * 1983-07-28 1986-05-06 Cornell Research Foundation, Inc. Monolithic coplanar waveguide travelling wave transistor amplifier
US4647789A (en) * 1984-09-14 1987-03-03 Rca Corporation Active element microwave phase shifter
US20060009185A1 (en) * 2004-07-08 2006-01-12 Khosro Shamsaifar Method and apparatus capable of interference cancellation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2984752A (en) * 1953-08-13 1961-05-16 Rca Corp Unipolar transistors
NL301884A (de) * 1962-12-17
US3333115A (en) * 1963-11-20 1967-07-25 Toko Inc Field-effect transistor having plural insulated-gate electrodes that vary space-charge voltage as a function of drain voltage
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
DE1266405B (de) * 1965-05-05 1968-04-18 Siemens Ag Unipolartransistor fuer hohe Frequenzen

Also Published As

Publication number Publication date
GB1279320A (en) 1972-06-28
US3634702A (en) 1972-01-11
FR2026617A1 (de) 1970-09-18
CH477779A (de) 1969-08-31
DE1962403A1 (de) 1970-07-16
FR2026617B1 (de) 1974-06-21

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee