NL139139B - Transistor, die zowel bipolair als unipolair bedreven wordt. - Google Patents

Transistor, die zowel bipolair als unipolair bedreven wordt.

Info

Publication number
NL139139B
NL139139B NL656515175A NL6515175A NL139139B NL 139139 B NL139139 B NL 139139B NL 656515175 A NL656515175 A NL 656515175A NL 6515175 A NL6515175 A NL 6515175A NL 139139 B NL139139 B NL 139139B
Authority
NL
Netherlands
Prior art keywords
bipolar
transistor
unipolar
driven
unipolar driven
Prior art date
Application number
NL656515175A
Other languages
English (en)
Dutch (nl)
Other versions
NL6515175A (xx
Original Assignee
Teszner Stanislas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teszner Stanislas filed Critical Teszner Stanislas
Publication of NL6515175A publication Critical patent/NL6515175A/xx
Publication of NL139139B publication Critical patent/NL139139B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
NL656515175A 1964-11-23 1965-11-23 Transistor, die zowel bipolair als unipolair bedreven wordt. NL139139B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR996017A FR1426254A (fr) 1964-11-23 1964-11-23 Triode semi-conductrice bivalente

Publications (2)

Publication Number Publication Date
NL6515175A NL6515175A (xx) 1966-05-24
NL139139B true NL139139B (nl) 1973-06-15

Family

ID=8843170

Family Applications (1)

Application Number Title Priority Date Filing Date
NL656515175A NL139139B (nl) 1964-11-23 1965-11-23 Transistor, die zowel bipolair als unipolair bedreven wordt.

Country Status (7)

Country Link
US (1) US3408544A (xx)
JP (1) JPS4838990B1 (xx)
CH (1) CH426021A (xx)
DE (1) DE1514892B2 (xx)
FR (1) FR1426254A (xx)
GB (1) GB1053428A (xx)
NL (1) NL139139B (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622812A (en) * 1968-09-09 1971-11-23 Texas Instruments Inc Bipolar-to-mos interface stage
DE2405067C2 (de) * 1974-02-02 1982-06-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer Halbleiteranordnung
US4095252A (en) * 1976-12-27 1978-06-13 National Semiconductor Corporation Composite jfet-bipolar transistor structure
NL9402176A (nl) * 1977-02-02 1995-06-01 Zaidan Hojin Handotai Kenkyu Halfgeleiderinrichting.
US4337474A (en) * 1978-08-31 1982-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
FR2458950A1 (fr) * 1979-06-12 1981-01-02 Ibm France Dispositif de commutation et son application a une alimentation de puissance du type commute
DE3009390A1 (de) * 1980-03-12 1981-09-17 GHT Gesellschaft für Hochtemperaturreaktor-Technik mbH, 5060 Bergisch Gladbach Hochtemperaturreaktor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3022568A (en) * 1957-03-27 1962-02-27 Rca Corp Semiconductor devices
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor

Also Published As

Publication number Publication date
CH426021A (fr) 1966-12-15
DE1514892A1 (de) 1969-06-19
US3408544A (en) 1968-10-29
DE1514892B2 (de) 1972-01-05
FR1426254A (fr) 1966-01-28
GB1053428A (xx)
NL6515175A (xx) 1966-05-24
JPS4838990B1 (xx) 1973-11-21

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Legal Events

Date Code Title Description
VJC Lapsed due to non-payment of the due maintenance fee for the patent or patent application
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: TESZNER