NL138894B - Halfgeleiderdiode met dubbele basis. - Google Patents

Halfgeleiderdiode met dubbele basis.

Info

Publication number
NL138894B
NL138894B NL290534A NL290534A NL138894B NL 138894 B NL138894 B NL 138894B NL 290534 A NL290534 A NL 290534A NL 290534 A NL290534 A NL 290534A NL 138894 B NL138894 B NL 138894B
Authority
NL
Netherlands
Prior art keywords
semiconducted
diode
double base
double
base
Prior art date
Application number
NL290534A
Other languages
English (en)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of NL138894B publication Critical patent/NL138894B/nl

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45015Cross-sectional shape being circular
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/4901Structure
    • H01L2224/4903Connectors having different sizes, e.g. different diameters
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444Gold (Au) as principal constituent
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01013Aluminum [Al]
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode
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    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • H01L2924/13034Silicon Controlled Rectifier [SCR]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL290534A 1962-03-23 1963-03-22 Halfgeleiderdiode met dubbele basis. NL138894B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18205762 US3253196A (en) 1962-03-23 1962-03-23 Unijunction transistors

Publications (1)

Publication Number Publication Date
NL138894B true NL138894B (nl) 1973-05-15

Family

ID=22666904

Family Applications (2)

Application Number Title Priority Date Filing Date
NL290534D NL290534A (nl) 1962-03-23
NL290534A NL138894B (nl) 1962-03-23 1963-03-22 Halfgeleiderdiode met dubbele basis.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL290534D NL290534A (nl) 1962-03-23

Country Status (5)

Country Link
US (1) US3253196A (nl)
DE (2) DE1464633B2 (nl)
GB (1) GB979990A (nl)
NL (2) NL138894B (nl)
SE (1) SE311953B (nl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436617A (en) * 1966-09-01 1969-04-01 Motorola Inc Semiconductor device
US3439237A (en) * 1966-10-31 1969-04-15 Gen Electric Analogue unijunction device
US3414775A (en) * 1967-03-03 1968-12-03 Ibm Heat dissipating module assembly and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1037293A (fr) * 1951-05-19 1953-09-15 Licentia Gmbh Redresseur sec à contrôle électrique et son procédé de fabrication
US2769926A (en) * 1953-03-09 1956-11-06 Gen Electric Non-linear resistance device
US3081421A (en) * 1954-08-17 1963-03-12 Gen Motors Corp Unipolar transistor
DE1068301B (nl) * 1955-11-12 1959-11-05
US2975342A (en) * 1957-08-16 1961-03-14 Research Corp Narrow base planar junction punch-thru diode
US2947925A (en) * 1958-02-21 1960-08-02 Motorola Inc Transistor and method of making the same
US3025438A (en) * 1959-09-18 1962-03-13 Tungsol Electric Inc Field effect transistor
US3114867A (en) * 1960-09-21 1963-12-17 Rca Corp Unipolar transistors and assemblies therefor

Also Published As

Publication number Publication date
NL290534A (nl) 1900-01-01
US3253196A (en) 1966-05-24
DE1464633A1 (de) 1969-05-22
GB979990A (en) 1965-01-06
SE311953B (nl) 1969-06-30
DE1875627U (de) 1963-07-18
DE1464633B2 (de) 1976-05-26

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Legal Events

Date Code Title Description
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: GEN ELECTRIC

V4 Discontinued because of reaching the maximum lifetime of a patent