|
US3868254A
(en)
*
|
1972-11-29 |
1975-02-25 |
Gaf Corp |
Positive working quinone diazide lithographic plate compositions and articles having non-ionic surfactants
|
|
US4174222A
(en)
*
|
1975-05-24 |
1979-11-13 |
Tokyo Ohka Kogyo Kabushiki Kaisha |
Positive-type O-quinone diazide containing photoresist compositions
|
|
DE2547905C2
(de)
*
|
1975-10-25 |
1985-11-21 |
Hoechst Ag, 6230 Frankfurt |
Lichtempfindliches Aufzeichnungsmaterial
|
|
JPS561044A
(en)
*
|
1979-06-16 |
1981-01-08 |
Konishiroku Photo Ind Co Ltd |
Photosensitive composition
|
|
JPS59165053A
(ja)
*
|
1983-03-11 |
1984-09-18 |
Japan Synthetic Rubber Co Ltd |
ポジ型感光性樹脂組成物
|
|
US4499171A
(en)
*
|
1982-04-20 |
1985-02-12 |
Japan Synthetic Rubber Co., Ltd. |
Positive type photosensitive resin composition with at least two o-quinone diazides
|
|
DE3220816A1
(de)
*
|
1982-06-03 |
1983-12-08 |
Merck Patent Gmbh, 6100 Darmstadt |
Lichtempfindliche komponenten fuer positiv arbeitende fotoresistmaterialien
|
|
DE3421471A1
(de)
*
|
1984-06-08 |
1985-12-12 |
Hoechst Ag, 6230 Frankfurt |
Perfluoralkylgruppen aufweisende 1,2-naphthochinondiazidverbindungen und reproduktionsmaterialien, die diese verbindungen enthalten
|
|
US4596763A
(en)
*
|
1984-10-01 |
1986-06-24 |
American Hoechst Corporation |
Positive photoresist processing with mid U-V range exposure
|
|
JPS61118744A
(ja)
*
|
1984-11-15 |
1986-06-06 |
Tokyo Ohka Kogyo Co Ltd |
ポジ型ホトレジスト組成物
|
|
JPS61141441A
(ja)
*
|
1984-12-14 |
1986-06-28 |
Tokyo Ohka Kogyo Co Ltd |
ポジ型ホトレジスト組成物
|
|
US5217840A
(en)
*
|
1985-08-12 |
1993-06-08 |
Hoechst Celanese Corporation |
Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
|
|
US4929536A
(en)
*
|
1985-08-12 |
1990-05-29 |
Hoechst Celanese Corporation |
Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
|
US5256522A
(en)
*
|
1985-08-12 |
1993-10-26 |
Hoechst Celanese Corporation |
Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
|
US4684597A
(en)
*
|
1985-10-25 |
1987-08-04 |
Eastman Kodak Company |
Non-precipitating quinone diazide polymer containing photoresist composition with o-quinone diazide trisester as dissolution inhibitor
|
|
US4737437A
(en)
*
|
1986-03-27 |
1988-04-12 |
East Shore Chemical Co. |
Light sensitive diazo compound, composition and method of making the composition
|
|
US4732837A
(en)
*
|
1986-05-02 |
1988-03-22 |
Hoechst Celanese Corporation |
Novel mixed ester O-quinone photosensitizers
|
|
US4902785A
(en)
*
|
1986-05-02 |
1990-02-20 |
Hoechst Celanese Corporation |
Phenolic photosensitizers containing quinone diazide and acidic halide substituents
|
|
US5035976A
(en)
*
|
1986-05-02 |
1991-07-30 |
Hoechst Celanese Corporation |
Photosensitive article having phenolic photosensitizers containing quinone diazide and acid halide substituents
|
|
US5162510A
(en)
*
|
1986-05-02 |
1992-11-10 |
Hoechst Celanese Corporation |
Process for the preparation of photosensitive compositions containing a mixed ester o-quinone photosensitizer
|
|
US4732836A
(en)
*
|
1986-05-02 |
1988-03-22 |
Hoechst Celanese Corporation |
Novel mixed ester O-quinone photosensitizers
|
|
JP2568827B2
(ja)
*
|
1986-10-29 |
1997-01-08 |
富士写真フイルム株式会社 |
ポジ型フオトレジスト組成物
|
|
US5182183A
(en)
*
|
1987-03-12 |
1993-01-26 |
Mitsubishi Kasei Corporation |
Positive photosensitive planographic printing plates containing specific high-molecular weight compound and photosensitive ester of O-napthoquinonediazidosulfonic acid with polyhydroxybenzophenone
|
|
JPS6449038A
(en)
*
|
1987-08-19 |
1989-02-23 |
Mitsubishi Chem Ind |
Positive type photoresist composition
|
|
US5248582A
(en)
*
|
1988-09-07 |
1993-09-28 |
Fuji Photo Film Co., Ltd. |
Positive-type photoresist composition
|
|
JPH0743534B2
(ja)
*
|
1989-04-21 |
1995-05-15 |
東京応化工業株式会社 |
半導体デバイス用レジストパターンの製造方法
|
|
US5075194A
(en)
*
|
1990-01-09 |
1991-12-24 |
Industrial Technology Research Institute |
Positive photoresist composition containing 4,4-diester, 4,5-diester, or 5,5-diester of spiroglycol and 1-oxo-2-diazonaphthalene-5-sulfonic acid chloride
|
|
US5296330A
(en)
*
|
1991-08-30 |
1994-03-22 |
Ciba-Geigy Corp. |
Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
|
|
US6165697A
(en)
|
1991-11-15 |
2000-12-26 |
Shipley Company, L.L.C. |
Antihalation compositions
|
|
JP2944296B2
(ja)
|
1992-04-06 |
1999-08-30 |
富士写真フイルム株式会社 |
感光性平版印刷版の製造方法
|
|
US5384228A
(en)
*
|
1992-04-14 |
1995-01-24 |
Tokyo Ohka Kogyo Co., Ltd. |
Alkali-developable positive-working photosensitive resin composition
|
|
US5401605A
(en)
*
|
1992-08-12 |
1995-03-28 |
Tokyo Ohka Kogyo Co., Ltd. |
Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound
|
|
US5645970A
(en)
*
|
1995-10-25 |
1997-07-08 |
Industrial Technology Research Institute |
Weak base developable positive photoresist composition containing quinonediazide compound
|
|
US5853947A
(en)
*
|
1995-12-21 |
1998-12-29 |
Clariant Finance (Bvi) Limited |
Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate
|
|
US7285422B1
(en)
|
1997-01-23 |
2007-10-23 |
Sequenom, Inc. |
Systems and methods for preparing and analyzing low volume analyte array elements
|
|
US6783914B1
(en)
|
2000-02-25 |
2004-08-31 |
Massachusetts Institute Of Technology |
Encapsulated inorganic resists
|
|
US20050037293A1
(en)
*
|
2000-05-08 |
2005-02-17 |
Deutsch Albert S. |
Ink jet imaging of a lithographic printing plate
|
|
US20020142483A1
(en)
|
2000-10-30 |
2002-10-03 |
Sequenom, Inc. |
Method and apparatus for delivery of submicroliter volumes onto a substrate
|
|
US6936398B2
(en)
|
2001-05-09 |
2005-08-30 |
Massachusetts Institute Of Technology |
Resist with reduced line edge roughness
|
|
JP4001232B2
(ja)
|
2002-12-26 |
2007-10-31 |
Ｔｄｋ株式会社 |
マスク形成方法、パターン化薄膜形成方法およびマイクロデバイスの製造方法
|
|
US6852465B2
(en)
*
|
2003-03-21 |
2005-02-08 |
Clariant International Ltd. |
Photoresist composition for imaging thick films
|
|
US7090958B2
(en)
*
|
2003-04-11 |
2006-08-15 |
Ppg Industries Ohio, Inc. |
Positive photoresist compositions having enhanced processing time
|
|
WO2006039810A1
(en)
*
|
2004-10-13 |
2006-04-20 |
St-Jean Photochimie Inc. |
Photoactive compositions and preparation thereof
|
|
WO2006062348A1
(en)
|
2004-12-09 |
2006-06-15 |
Kolon Industries, Inc |
Positive type dry film photoresist and composition for preparing the same
|
|
US7255970B2
(en)
*
|
2005-07-12 |
2007-08-14 |
Az Electronic Materials Usa Corp. |
Photoresist composition for imaging thick films
|
|
US20070105040A1
(en)
*
|
2005-11-10 |
2007-05-10 |
Toukhy Medhat A |
Developable undercoating composition for thick photoresist layers
|
|
US20090180931A1
(en)
|
2007-09-17 |
2009-07-16 |
Sequenom, Inc. |
Integrated robotic sample transfer device
|
|
US20130108956A1
(en)
|
2011-11-01 |
2013-05-02 |
Az Electronic Materials Usa Corp. |
Nanocomposite positive photosensitive composition and use thereof
|
|
US11675266B2
(en)
*
|
2021-04-15 |
2023-06-13 |
Industrial Technology Research Institute |
Photosensitive compound, photosensitive composition, and patterning method
|
|
WO2024223739A1
(en)
|
2023-04-27 |
2024-10-31 |
Merck Patent Gmbh |
Photoactive compounds
|