NL130248C - - Google Patents

Info

Publication number
NL130248C
NL130248C NL130248DA NL130248C NL 130248 C NL130248 C NL 130248C NL 130248D A NL130248D A NL 130248DA NL 130248 C NL130248 C NL 130248C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL130248C publication Critical patent/NL130248C/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63—Esters of sulfonic acids
    • C07C309/71—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of rings other than six-membered aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
NL130248D 1959-01-21 NL130248C (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEK36769A DE1118606B (de) 1959-01-21 1959-01-21 Lichtempfindliche Schichten fuer die photomechanische Herstellung von Druckformen

Publications (1)

Publication Number Publication Date
NL130248C true NL130248C (ru)

Family

ID=7220794

Family Applications (2)

Application Number Title Priority Date Filing Date
NL247588D NL247588A (ru) 1959-01-21
NL130248D NL130248C (ru) 1959-01-21

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL247588D NL247588A (ru) 1959-01-21

Country Status (7)

Country Link
US (2) US3184310A (ru)
BE (1) BE586713A (ru)
CH (1) CH390053A (ru)
DE (1) DE1118606B (ru)
FR (1) FR1260028A (ru)
GB (1) GB935250A (ru)
NL (2) NL130248C (ru)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
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DE3043967A1 (de) 1980-11-21 1982-06-24 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch auf basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial
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DE3127754A1 (de) * 1981-07-14 1983-02-03 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch auf basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial
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US4596763A (en) * 1984-10-01 1986-06-24 American Hoechst Corporation Positive photoresist processing with mid U-V range exposure
JPS62123444A (ja) * 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
US4737437A (en) * 1986-03-27 1988-04-12 East Shore Chemical Co. Light sensitive diazo compound, composition and method of making the composition
DE3635303A1 (de) 1986-10-17 1988-04-28 Hoechst Ag Verfahren zur abtragenden modifizierung von mehrstufig aufgerauhten traegermaterialien aus aluminium oder dessen legierungen und deren verwendung bei der herstellung von offsetdruckplatten
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US5081001A (en) * 1987-05-22 1992-01-14 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4797345A (en) * 1987-07-01 1989-01-10 Olin Hunt Specialty Products, Inc. Light-sensitive 1,2-naphthoquinone-2-diazide-4-sulfonic acid monoesters of cycloalkyl substituted phenol and their use in light-sensitive mixtures
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JPH07119374B2 (ja) * 1987-11-06 1995-12-20 関西ペイント株式会社 ポジ型感光性カチオン電着塗料組成物
JP2552891B2 (ja) * 1988-01-26 1996-11-13 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5290656A (en) * 1988-05-07 1994-03-01 Sumitomo Chemical Company, Limited Resist composition, novel phenol compound and quinone diazide sulfonic acid ester of novel phenol compound
JP2552900B2 (ja) * 1988-06-07 1996-11-13 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5456996A (en) * 1988-07-07 1995-10-10 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition
JPH063544B2 (ja) * 1988-07-07 1994-01-12 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
US5861229A (en) * 1988-07-07 1999-01-19 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition comprising a 1,2-quinone diazide compound, an alkali-soluble resin and a polyphenol compound
JP2715480B2 (ja) * 1988-10-13 1998-02-18 住友化学工業株式会社 ポジ型レジスト用組成物
EP0384892A1 (de) * 1989-02-23 1990-08-29 Ciba-Geigy Ag Photoresist-Zusammensetzungen
US5200293A (en) * 1989-02-23 1993-04-06 Ciba-Geigy Corporation Photoresist composition containing specific amounts of a naphthoquinone diazide sulfonyl ester of tetrahydroxy diphenyl sulfide and a polyhydroxy compound
JPH087433B2 (ja) * 1989-04-19 1996-01-29 日本ゼオン株式会社 ポジ型レジスト組成物
CA2023791A1 (en) * 1989-08-24 1991-02-25 Ayako Ida Radiation-sensitive positive resist composition
US5256521A (en) * 1989-09-19 1993-10-26 Ocg Microelectronic Materials, Inc. Process of developing a positive pattern in an O-quinone diazide photoresist containing a tris-(hydroxyphenyl) lower alkane compound sensitivity enhancer
US5215856A (en) * 1989-09-19 1993-06-01 Ocg Microelectronic Materials, Inc. Tris-(hydroxyphenyl) lower alkane compounds as sensitivity enhancers for o-quinonediazide containing radiation-sensitive compositions and elements
JP2571136B2 (ja) * 1989-11-17 1997-01-16 日本ゼオン株式会社 ポジ型レジスト組成物
JPH061377B2 (ja) * 1989-12-28 1994-01-05 日本ゼオン株式会社 ポジ型レジスト組成物
DE4134526A1 (de) * 1990-10-18 1992-05-14 Toyo Gosei Kogyo Kk Positive photoresist-zusammensetzung und mustererzeugungsverfahren unter verwendung dieser zusammensetzung
US5300396A (en) * 1990-11-28 1994-04-05 Hoechst Celanese Corporation Process of making naphthoquinone diazide esters using lactone solvents
US5260162A (en) * 1990-12-17 1993-11-09 Khanna Dinesh N Photosensitizer compositions containing diazo fluorinated esters of hexafluoro-bis-phenols or bis-hexafluoroethers
US5283155A (en) * 1991-01-11 1994-02-01 Sumitomo Chemical Company, Limited Positive resist composition comprising an alkali-soluble resin and a quinone diazide sulfonic acid ester of a hydroxy flavan derivative
DE4137325A1 (de) * 1991-11-13 1993-05-19 Hoechst Ag Lichtempfindliches gemisch auf der basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches material
US5362599A (en) * 1991-11-14 1994-11-08 International Business Machines Corporations Fast diazoquinone positive resists comprising mixed esters of 4-sulfonate and 5-sulfonate compounds
JP3391471B2 (ja) * 1992-02-25 2003-03-31 住友化学工業株式会社 ポジ型レジスト組成物
WO1993018438A1 (en) * 1992-03-06 1993-09-16 Hoechst Celanese Corporation Positive photoresist composition
JP2944296B2 (ja) 1992-04-06 1999-08-30 富士写真フイルム株式会社 感光性平版印刷版の製造方法
US5384228A (en) * 1992-04-14 1995-01-24 Tokyo Ohka Kogyo Co., Ltd. Alkali-developable positive-working photosensitive resin composition
US5401605A (en) * 1992-08-12 1995-03-28 Tokyo Ohka Kogyo Co., Ltd. Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound
GB9326150D0 (en) * 1993-12-22 1994-02-23 Alcan Int Ltd Electrochemical roughening method
JP3503839B2 (ja) 1994-05-25 2004-03-08 富士写真フイルム株式会社 ポジ型感光性組成物
JP3278306B2 (ja) 1994-10-31 2002-04-30 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3290316B2 (ja) 1994-11-18 2002-06-10 富士写真フイルム株式会社 感光性平版印刷版
US5514515A (en) * 1995-05-24 1996-05-07 Shipley Company, L.L.C. Photoactive compounds having a heterocyclic group used in photoresist compositions
US5618932A (en) * 1995-05-24 1997-04-08 Shipley Company, L.L.C. Photoactive compounds and compositions
US7285422B1 (en) 1997-01-23 2007-10-23 Sequenom, Inc. Systems and methods for preparing and analyzing low volume analyte array elements
EP1452312A1 (en) 1997-10-17 2004-09-01 Fuji Photo Film Co., Ltd. A positive type photosensitive image-forming material for an infrared laser and a positive type photosensitive composition for an infrared laser
JP4219435B2 (ja) * 1997-12-15 2009-02-04 東京応化工業株式会社 ポリフェノールジエステル化物の製造方法およびポジ型感光性組成物
JP4179579B2 (ja) * 2000-05-08 2008-11-12 東洋合成工業株式会社 １，２−ナフトキノンジアジド系感光剤の製造方法
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JP4015946B2 (ja) * 2000-10-30 2007-11-28 シークエノム・インコーポレーテツド 基板上にサブマイクロリットルの体積を供給する方法及び装置
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ATE532106T1 (de) 2002-09-20 2011-11-15 Fujifilm Corp Verfahren zur herstellung einer flachdruckplatte
US7090958B2 (en) * 2003-04-11 2006-08-15 Ppg Industries Ohio, Inc. Positive photoresist compositions having enhanced processing time
JP2006058430A (ja) 2004-08-18 2006-03-02 Fuji Photo Film Co Ltd 平版印刷版原版
JP4404792B2 (ja) 2005-03-22 2010-01-27 富士フイルム株式会社 平版印刷版原版
JP2007070694A (ja) * 2005-09-07 2007-03-22 Konica Minolta Medical & Graphic Inc 帯状アルミニウム板の陽極酸化処理方法、平版印刷版材料用支持体及び陽極酸化処理装置
US20090180931A1 (en) 2007-09-17 2009-07-16 Sequenom, Inc. Integrated robotic sample transfer device
JP2009083106A (ja) 2007-09-27 2009-04-23 Fujifilm Corp 平版印刷版用版面保護剤及び平版印刷版の製版方法
JP4994175B2 (ja) 2007-09-28 2012-08-08 富士フイルム株式会社 平版印刷版原版、及びそれに用いる共重合体の製造方法
JP4790682B2 (ja) 2007-09-28 2011-10-12 富士フイルム株式会社 平版印刷版原版
WO2009063824A1 (ja) 2007-11-14 2009-05-22 Fujifilm Corporation 塗布膜の乾燥方法及び平版印刷版原版の製造方法
JP2009236355A (ja) 2008-03-26 2009-10-15 Fujifilm Corp 乾燥方法及び装置
EP2302456B1 (en) * 2008-07-16 2015-09-02 Nissan Chemical Industries, Ltd. Positive resist composition;patttern forming method; microlens and planarization film therefrom; solid-state imaging device, liquid crystal display device and led display device comprising the same
JP5183380B2 (ja) 2008-09-09 2013-04-17 富士フイルム株式会社 赤外線レーザ用感光性平版印刷版原版
JP2010237435A (ja) 2009-03-31 2010-10-21 Fujifilm Corp 平版印刷版原版
KR101146622B1 (ko) * 2009-08-31 2012-05-16 금호석유화학 주식회사 감광성 화합물 및 이를 포함하는 감광성 조성물
US8883401B2 (en) 2009-09-24 2014-11-11 Fujifilm Corporation Lithographic printing original plate
US8608878B2 (en) * 2010-09-08 2013-12-17 Ensign-Bickford Aerospace & Defense Company Slow burning heat generating structure
JP5490168B2 (ja) 2012-03-23 2014-05-14 富士フイルム株式会社 平版印刷版原版及び平版印刷版の作製方法
JP5512730B2 (ja) 2012-03-30 2014-06-04 富士フイルム株式会社 平版印刷版の作製方法

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GB537696A (en) * 1940-01-03 1941-07-02 Kodak Ltd Improvements in and relating to colour-forming development and colour photographic elements
DE907739C (de) * 1949-07-23 1954-02-18 Kalle & Co Ag Verfahren zur Herstellung von Kopien, besonders Druckformen, mit Hilfe von Diazoverbindungen und dafuer verwendbares lichtempfindliches Material
NL77540C (ru) * 1950-12-23
AT182606B (de) * 1951-04-13 1955-07-25 Hans Dr Ing Deckel Photographischer Objektivveschluß mit einem Blitzlicht-Gleichstimmer
NL185407B (nl) * 1953-03-11 Mitsui Petrochemical Ind Werkwijze voor het polymeriseren of copolymeriseren van 1-alkenen alsmede katalysatorsamenstelling voor toepassing van deze werkwijze.
BE539176A (ru) * 1954-09-08

Also Published As

Publication number Publication date
DE1118606B (de) 1961-11-30
US3184310A (en) 1965-05-18
CH390053A (de) 1965-03-31
BE586713A (ru)
US3188210A (en) 1965-06-08
GB935250A (en) 1963-08-28
NL247588A (ru)
FR1260028A (fr) 1961-05-05

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