NL122607C - - Google Patents
Info
- Publication number
- NL122607C NL122607C NL122607DA NL122607C NL 122607 C NL122607 C NL 122607C NL 122607D A NL122607D A NL 122607DA NL 122607 C NL122607 C NL 122607C
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2686961 | 1961-07-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL122607C true NL122607C (xx) | 1900-01-01 |
Family
ID=12205283
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL281360D NL281360A (xx) | 1961-07-26 | ||
NL122607D NL122607C (xx) | 1961-07-26 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL281360D NL281360A (xx) | 1961-07-26 |
Country Status (3)
Country | Link |
---|---|
US (1) | US3239908A (xx) |
DE (1) | DE1193169B (xx) |
NL (2) | NL122607C (xx) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3320485A (en) * | 1964-03-30 | 1967-05-16 | Trw Inc | Dielectric isolation for monolithic circuit |
US3393349A (en) * | 1964-04-30 | 1968-07-16 | Motorola Inc | Intergrated circuits having isolated islands with a plurality of semiconductor devices in each island |
US3383760A (en) * | 1965-08-09 | 1968-05-21 | Rca Corp | Method of making semiconductor devices |
DE1230915B (de) * | 1965-03-26 | 1966-12-22 | Siemens Ag | Verfahren zum Herstellen von integrierten Halbleiterbauelementen |
US3355636A (en) * | 1965-06-29 | 1967-11-28 | Rca Corp | High power, high frequency transistor |
US3387193A (en) * | 1966-03-24 | 1968-06-04 | Mallory & Co Inc P R | Diffused resistor for an integrated circuit |
JPS6051700A (ja) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | シリコン結晶体の接合方法 |
DE3583183D1 (de) * | 1984-05-09 | 1991-07-18 | Toshiba Kawasaki Kk | Verfahren zur herstellung eines halbleitersubstrates. |
US4649627A (en) * | 1984-06-28 | 1987-03-17 | International Business Machines Corporation | Method of fabricating silicon-on-insulator transistors with a shared element |
JPS6173345A (ja) * | 1984-09-19 | 1986-04-15 | Toshiba Corp | 半導体装置 |
JPH0770474B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 化合物半導体装置の製造方法 |
JP2559700B2 (ja) * | 1986-03-18 | 1996-12-04 | 富士通株式会社 | 半導体装置の製造方法 |
US4704785A (en) * | 1986-08-01 | 1987-11-10 | Texas Instruments Incorporated | Process for making a buried conductor by fusing two wafers |
DE69114531T2 (de) * | 1990-02-07 | 1996-04-25 | Harris Corp | Löten von Wafern unter Verwendung von eingeschlossenem oxydierendem Dampf. |
US5266135A (en) * | 1990-02-07 | 1993-11-30 | Harris Corporation | Wafer bonding process employing liquid oxidant |
US5668057A (en) * | 1991-03-13 | 1997-09-16 | Matsushita Electric Industrial Co., Ltd. | Methods of manufacture for electronic components having high-frequency elements |
US5747857A (en) * | 1991-03-13 | 1998-05-05 | Matsushita Electric Industrial Co., Ltd. | Electronic components having high-frequency elements and methods of manufacture therefor |
US6909146B1 (en) | 1992-02-12 | 2005-06-21 | Intersil Corporation | Bonded wafer with metal silicidation |
JPH06291587A (ja) * | 1992-07-08 | 1994-10-18 | Matsushita Electric Ind Co Ltd | 圧電振動子 |
JPH06350371A (ja) * | 1993-06-10 | 1994-12-22 | Matsushita Electric Ind Co Ltd | 圧電デバイスの製造方法 |
US5521434A (en) * | 1994-10-17 | 1996-05-28 | International Business Machines Corporation | Semiconductor chip and electronic module with integrated surface interconnects/components |
US6525335B1 (en) | 2000-11-06 | 2003-02-25 | Lumileds Lighting, U.S., Llc | Light emitting semiconductor devices including wafer bonded heterostructures |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2996799A (en) * | 1953-05-21 | 1961-08-22 | Hans Sickinger | Method of manufacturing multi-layered tube |
NL219101A (xx) * | 1956-10-31 | 1900-01-01 | ||
US2995686A (en) * | 1959-03-02 | 1961-08-08 | Sylvania Electric Prod | Microelectronic circuit module |
US2990500A (en) * | 1959-03-16 | 1961-06-27 | Square D Co | Electronic module |
US3050843A (en) * | 1959-04-15 | 1962-08-28 | Bell Telephone Labor Inc | Method of bonding metallic members |
US3091849A (en) * | 1959-09-14 | 1963-06-04 | Pacific Semiconductors Inc | Method of bonding materials |
-
0
- NL NL281360D patent/NL281360A/xx unknown
- NL NL122607D patent/NL122607C/xx active
-
1962
- 1962-05-30 DE DEN21646A patent/DE1193169B/de active Pending
- 1962-07-03 US US207242A patent/US3239908A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3239908A (en) | 1966-03-15 |
DE1193169B (de) | 1965-05-20 |
NL281360A (xx) | 1900-01-01 |