NL109229C - - Google Patents

Info

Publication number
NL109229C
NL109229C NL109229DA NL109229C NL 109229 C NL109229 C NL 109229C NL 109229D A NL109229D A NL 109229DA NL 109229 C NL109229 C NL 109229C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of NL109229C publication Critical patent/NL109229C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/15—External mechanical adjustment of electron or ion optical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
NL109229D 1953-07-28 NL109229C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DES34551A DE969465C (de) 1953-07-28 1953-07-28 Halbleiterelement mit scharfen p-n- oder p-n-p-UEbergaengen
DES34714A DE1115838B (de) 1953-07-28 1953-08-07 Verfahren zum oxydierenden chemischen Behandeln von Halbleiteroberflaechen
DES34794A DE977619C (de) 1953-07-28 1953-08-13 Verfahren zum Erzeugen einer Schutzschicht auf einer Halbleiteranordnung mit mindestens einem p-n-UEbergang
DES38554A DE1012378B (de) 1953-07-28 1954-04-05 Halbleiteranordnung mit p-n-UEbergang

Publications (1)

Publication Number Publication Date
NL109229C true NL109229C (zh) 1900-01-01

Family

ID=27437475

Family Applications (6)

Application Number Title Priority Date Filing Date
NLAANVRAGE7906612,A NL189573B (nl) 1953-07-28 Scharnier voor een venster met een uit strengprofielen vervaardigde vleugellijst.
NL101504D NL101504C (zh) 1953-07-28
NL269213D NL269213A (zh) 1953-07-28
NL269212D NL269212A (zh) 1953-07-28
NL109229D NL109229C (zh) 1953-07-28
NL107276D NL107276C (zh) 1953-07-28

Family Applications Before (4)

Application Number Title Priority Date Filing Date
NLAANVRAGE7906612,A NL189573B (nl) 1953-07-28 Scharnier voor een venster met een uit strengprofielen vervaardigde vleugellijst.
NL101504D NL101504C (zh) 1953-07-28
NL269213D NL269213A (zh) 1953-07-28
NL269212D NL269212A (zh) 1953-07-28

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL107276D NL107276C (zh) 1953-07-28

Country Status (3)

Country Link
DE (4) DE969465C (zh)
FR (1) FR1112727A (zh)
NL (6) NL107276C (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1246886B (de) * 1960-07-30 1967-08-10 Elektronik M B H Verfahren zur Stabilisierung und Verbesserung der Sperreigenschaften von Halbleiterbauelementen
NL268782A (zh) * 1960-08-30
DE1246888C2 (de) * 1960-11-24 1975-10-23 Semikron, Gesellschaft für Gleichrichterbau und Elektronik m.b.H., 8500 Nürnberg Verfahren zum herstellen von gleichrichteranordnungen in brueckenschaltung fuer kleine stromstaerken
NL282407A (zh) * 1961-08-30
DE1244966B (de) * 1962-01-17 1967-07-20 Telefunken Patent Verfahren zur Herstellung von oberflaechenstabilisierten Halbleiterbauelementen
DE2413608C2 (de) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
DE2700463A1 (de) * 1977-01-07 1978-07-13 Siemens Ag Verfahren zum passivieren von halbleiterelementen

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE626305C (de) * 1928-03-10 1936-03-02 Siegmund Loewe Dr Mehrfachroehre
DE724888C (de) * 1936-05-30 1942-09-09 Siemens Ag Verfahren zum Herstellen von Selen-Gleichrichtern
US2362545A (en) * 1942-01-29 1944-11-14 Bell Telephone Labor Inc Selenium rectifier and method of making it
US2469569A (en) * 1945-03-02 1949-05-10 Bell Telephone Labor Inc Point contact negative resistance devices
NL34436C (zh) * 1945-04-20
NL129688C (zh) * 1945-04-28
NL144803C (zh) * 1948-02-26
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2497770A (en) * 1948-12-29 1950-02-14 Bell Telephone Labor Inc Transistor-microphone
NL153395B (nl) * 1949-02-10 Contraves Ag Verbetering van een bistabiele trekkerschakeling.
BE494101A (zh) * 1949-03-31
CA478611A (en) * 1949-12-29 1951-11-13 Western Electric Company, Incorporated Etching processes and solutions
US2619414A (en) * 1950-05-25 1952-11-25 Bell Telephone Labor Inc Surface treatment of germanium circuit elements
BE507187A (zh) * 1950-11-30
FR1056345A (zh) * 1951-04-28 1954-02-25
US2669692A (en) * 1951-08-10 1954-02-16 Bell Telephone Labor Inc Method for determining electrical characteristics of semiconductive bodies
GB1576783A (en) * 1977-11-07 1980-10-15 Teledyne Canada Control apparatus for a pneumaticallyoperated hopper feeder

Also Published As

Publication number Publication date
DE977619C (de) 1967-08-31
DE969465C (de) 1958-06-04
NL269212A (zh) 1900-01-01
NL269213A (zh) 1900-01-01
NL107276C (zh) 1900-01-01
DE1115838B (de) 1961-10-26
DE1012378B (de) 1957-07-18
NL189573B (nl) 1900-01-01
FR1112727A (fr) 1956-03-19
NL101504C (zh) 1900-01-01

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