NL108954C - - Google Patents
Info
- Publication number
- NL108954C NL108954C NL108954DA NL108954C NL 108954 C NL108954 C NL 108954C NL 108954D A NL108954D A NL 108954DA NL 108954 C NL108954 C NL 108954C
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES62679A DE1109141B (de) | 1959-04-22 | 1959-04-22 | Verfahren zur Herstellung eines einkristallinen hochgereinigten Halbleiterstabes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL108954C true NL108954C (US06826419-20041130-M00005.png) |
Family
ID=7495799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL108954D NL108954C (US06826419-20041130-M00005.png) | 1959-04-22 |
Country Status (6)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL285816A (US06826419-20041130-M00005.png) * | 1962-01-26 | |||
| USRE29824E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US3989468A (en) * | 1973-11-22 | 1976-11-02 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| JPS63270383A (ja) * | 1987-04-27 | 1988-11-08 | Shin Etsu Handotai Co Ltd | 半導体結晶棒の支持装置 |
-
0
- NL NL108954D patent/NL108954C/xx active
-
1959
- 1959-04-22 DE DES62679A patent/DE1109141B/de active Pending
-
1960
- 1960-01-22 CH CH76060A patent/CH382296A/de unknown
- 1960-03-29 GB GB11111/60A patent/GB915882A/en not_active Expired
- 1960-04-20 BE BE589911A patent/BE589911A/fr unknown
- 1960-04-21 FR FR824942A patent/FR1254723A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE589911A (fr) | 1960-10-20 |
| FR1254723A (fr) | 1961-02-24 |
| CH382296A (de) | 1964-09-30 |
| DE1109141B (de) | 1961-06-22 |
| GB915882A (en) | 1963-01-16 |
