NL105600C - - Google Patents
Info
- Publication number
- NL105600C NL105600C NL105600DA NL105600C NL 105600 C NL105600 C NL 105600C NL 105600D A NL105600D A NL 105600DA NL 105600 C NL105600 C NL 105600C
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/30—Polishing of semiconducting materials
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES49100A DE1160547B (de) | 1956-06-16 | 1956-06-16 | Verfahren zum elektrolytischen AEtzen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen Halbleiterkoerper und einem an die Oberflaeche tretenden pn-UEbergang |
Publications (1)
Publication Number | Publication Date |
---|---|
NL105600C true NL105600C (ko) |
Family
ID=7487131
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL216353D NL216353A (ko) | 1956-06-16 | ||
NL105600D NL105600C (ko) | 1956-06-16 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL216353D NL216353A (ko) | 1956-06-16 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3010885A (ko) |
CH (1) | CH374868A (ko) |
DE (1) | DE1160547B (ko) |
NL (2) | NL105600C (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3284333A (en) * | 1962-05-22 | 1966-11-08 | Ionics | Stable lead anodes |
US3351825A (en) * | 1964-12-21 | 1967-11-07 | Solitron Devices | Semiconductor device having an anodized protective film thereon and method of manufacturing same |
US3377258A (en) * | 1965-03-02 | 1968-04-09 | Westinghouse Electric Corp | Anodic oxidation |
US3419480A (en) * | 1965-03-12 | 1968-12-31 | Westinghouse Electric Corp | Anodic oxidation |
US3616380A (en) * | 1968-11-22 | 1971-10-26 | Bell Telephone Labor Inc | Barrier layer devices and methods for their manufacture |
GB1556778A (en) * | 1977-03-11 | 1979-11-28 | Post Office | Preparation of semiconductor surfaces |
JPS5462929A (en) * | 1977-10-28 | 1979-05-21 | Sumitomo Electric Ind Ltd | Surface treating method for aluminum and aluminum alloy |
US4272351A (en) * | 1978-10-27 | 1981-06-09 | Sumitomo Electric Industries, Ltd. | Apparatus for electrolytic etching |
US4891103A (en) * | 1988-08-23 | 1990-01-02 | Texas Instruments Incorporated | Anadization system with remote voltage sensing and active feedback control capabilities |
EP0400387B1 (de) * | 1989-05-31 | 1996-02-21 | Siemens Aktiengesellschaft | Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten |
JP3376258B2 (ja) | 1996-11-28 | 2003-02-10 | キヤノン株式会社 | 陽極化成装置及びそれに関連する装置及び方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL84057C (ko) * | 1948-02-26 | |||
DE823763C (de) * | 1949-09-15 | 1951-12-06 | Siemens Ag | Verfahren zum elektrolytischen Polieren der Oberflaeche von Halbleiterkristallen |
US2686279A (en) * | 1949-09-28 | 1954-08-10 | Rca Corp | Semiconductor device |
US2656496A (en) * | 1951-07-31 | 1953-10-20 | Bell Telephone Labor Inc | Semiconductor translating device |
DE823470C (de) * | 1950-09-12 | 1951-12-03 | Siemens Ag | Verfahren zum AEtzen eines Halbleiters |
US2783197A (en) * | 1952-01-25 | 1957-02-26 | Gen Electric | Method of making broad area semiconductor devices |
US2669692A (en) * | 1951-08-10 | 1954-02-16 | Bell Telephone Labor Inc | Method for determining electrical characteristics of semiconductive bodies |
BE528756A (ko) * | 1953-05-11 | |||
US2806189A (en) * | 1953-07-03 | 1957-09-10 | Sylvania Electric Prod | Alkaline titanate rectifiers |
US2802159A (en) * | 1953-10-20 | 1957-08-06 | Hughes Aircraft Co | Junction-type semiconductor devices |
US2885608A (en) * | 1954-12-03 | 1959-05-05 | Philco Corp | Semiconductive device and method of manufacture |
-
0
- NL NL216353D patent/NL216353A/xx unknown
- NL NL105600D patent/NL105600C/xx active
-
1956
- 1956-06-16 DE DES49100A patent/DE1160547B/de active Pending
-
1957
- 1957-06-11 US US665047A patent/US3010885A/en not_active Expired - Lifetime
- 1957-06-12 CH CH4719257A patent/CH374868A/de unknown
Also Published As
Publication number | Publication date |
---|---|
NL216353A (ko) | |
DE1160547B (de) | 1964-01-02 |
US3010885A (en) | 1961-11-28 |
CH374868A (de) | 1964-01-31 |