NL1044041A - Method for manufacturing device, device manufacturing apparatus, and mounting structure - Google Patents

Method for manufacturing device, device manufacturing apparatus, and mounting structure Download PDF

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Publication number
NL1044041A
NL1044041A NL1044041A NL1044041A NL1044041A NL 1044041 A NL1044041 A NL 1044041A NL 1044041 A NL1044041 A NL 1044041A NL 1044041 A NL1044041 A NL 1044041A NL 1044041 A NL1044041 A NL 1044041A
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NL
Netherlands
Prior art keywords
bonding
bump
chip
sensor
circuit board
Prior art date
Application number
NL1044041A
Other languages
Dutch (nl)
Other versions
NL1044041B1 (en
Inventor
Sakurai Daisuke
Itoi Kiyokazu
Ikuta Keiko
Original Assignee
Panasonic Ip Man Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2020093359A external-priority patent/JP7462270B2/en
Priority claimed from JP2020133003A external-priority patent/JP7474964B2/en
Application filed by Panasonic Ip Man Co Ltd filed Critical Panasonic Ip Man Co Ltd
Publication of NL1044041A publication Critical patent/NL1044041A/en
Application granted granted Critical
Publication of NL1044041B1 publication Critical patent/NL1044041B1/en

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
    • G01B7/20—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance formed by printed-circuit technique
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
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    • H01L2224/81417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/81424—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/81444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/81447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81908—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The present disclosure is a method for manufacturing a device including chip (102) ultrasonically bonded via bump (104) and board (106) facing chip (102). The method for manufacturing a device includes a step of measuring a change in resistance value of each of a plurality of sensors (107) when bump (104) provided on chip (102) is mounted on board (106) where the plurality of sensors (107) are embedded directly below board electrode (105) on which bump (104) is pressed and a step of estimating a bonding surface of bump (104) on board electrode (105) based on the change in resistance value. As a result, the amount of deviation of a mounting position of chip (102) on board (106) can be calculated accurately.

Description

ref.: P 2021 NL 013 TITLE: METHOD FOR MANUFACTURING DEVICE, DEVICE MANUFACTURING APPARATUS, AND MOUNTING STRUCTURE
BACKGROUND
1. Technical Field The present disclosure relates to a method for manufacturing a device, a device manufacturing apparatus, and a mounting structure.
2. Description of the Related Art In the related art, an ultrasonic bonding or a thermocompression bonding method, which is one of solid-phase bonding, is known as a method for mounting a chip on a board via bumps. A bump is a protruding-shaped connection electrode formed on a wiring lead or a chip on a board.
Specifically, when a chip is mounted on a board by using the ultrasonic bonding, ultrasonic vibration is applied to the bump that is disposed on the chip, and one electrode on the board in a state pressed against the other electrode of the chip and the board. Thereby, a plastic deformation of the bump and the electrode is accelerated, and the new surfaces of the bump and the electrode are in close contact with each other. As a result, the metal atoms of the bump and the electrode are diffused from each other, and the bump and the electrode are bonded.
A flip-chip bonder is used for the ultrasonic bonding or the thermocompression bonding method. The flip-chip bonder has a function of monitoring mounting load or ultrasonic power during a process. However, the above-mentioned monitoring function monitors only the mounting load and the value of the ultrasonic power applied to the entire chip. Therefore, with the flip chip bonder, it is difficult to measure the force acting on a bonding portion between the electrode and the bump on the chip or the board, that is, the strain.
Therefore, for example, in Japanese Patent Unexamined Publication No. 3599003 (hereinafter referred to as "Patent Literature 1") in the related art, a strain gauge is installed directly below the electrode on which the bump is formed, and the change in resistance value of the strain gauge during the mounting process is measured. As a result, it is configured such that the strain generated at the bonding portion between the electrode and the bump can be measured. The strain gauge is linearly formed by disposing a plurality of conductors at equal pitches in one resistance element, and one is embedded directly below the electrode. In this type of technology in the related art, one linearly formed strain gauge is embedded directly below the electrode. Therefore, even when the pressing force of the bump on the electrode is constant, when the position of the bump changes on the electrode, variation occurs in the amount of strain measured by the strain gauge. That is, for example, in a case in which the amount of deviation in mounting position of the chip on the board (amount of positional deviation) is calculated based on the measured value of the strain gauge, when the variation occurs in the amount of strain, the calculation accuracy of the amount of positional deviation decreases. Since the amount of positional deviation affects the assembly accuracy of the device, it greatly affects the performance of micro electro mechanical systems (MEMS) or optical devices. That is, in the related art, there is room for improvement in calculating the amount of positional deviation.
SUMMARY The present disclosure provides a method for manufacturing a device, a device manufacturing apparatus, and a mounting structure capable of accurately calculating the amount of deviation of a mounting position of a chip on a board. One exemplary embodiment of the present disclosure is a method for manufacturing a device that includes a chip that is ultrasonically bonded via a bump and a board that faces the chip. The method for manufacturing the device includes a step of measuring a change in resistance value of each of a plurality of sensors when the bump provided on the chip are mounted on the board in which the plurality of sensors are embedded directly below an electrode on which the bump is pressed. A step of estimating a bonding surface of the bump to the electrode in accordance with the change in resistance value and a step of determining a quality of a bonding state between the chip and the board in accordance with the estimated bonding surface, are further included. The device manufacturing apparatus according to the exemplary embodiment of the present disclosure includes a stage that holds the board bonded to the chip via the bump and a bonding head that applies ultrasonic vibration to the chip while pressing the chip toward the board. A measurer that measures a change in resistance value of each of the plurality of sensors when the bump provided on the chip are mounted on the board in which the plurality of sensors are embedded directly below an electrode on which the bump is pressed, and a processor that estimates the bonding surface of the bump to the electrode in accordance with the change in resistance value, are further included.
According to the present disclosure, it is possible to provide a method for manufacturing a device, a device manufacturing apparatus, and a mounting structure capable of accurately calculating the amount of deviation of the mounting position of a chip on a board. Further advantages and effects in the present disclosure will be apparent from the specification and drawings described below. Such advantages and/or effects are provided by some exemplary embodiments and features described in the specification and drawings, respectively, but not all need to be provided to obtain one or more identical features.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a configuration view of a device manufacturing apparatus according to Exemplary Embodiment 1 of the present disclosure; FIG. 2 is a transmission view of a board electrode and a board when the same device manufacturing apparatus is viewed from the Z-axis direction; FIG. 3 is a cross-sectional view taken along the line 3 - 3 of the same board shown in FIG. 2; FIG. 4 is a configuration view of a modification example of the device manufacturing apparatus according to Exemplary Embodiment 1; FIG. 5 is a flowchart for explaining an inspection method of the same device manufacturing apparatus; FIG. 6 is a view showing a configuration example of a board electrode and a board included in a device manufacturing apparatus according to Exemplary Embodiment 2 of the present disclosure; FIG. 7 is a configuration view of a device manufacturing apparatus according to Exemplary Embodiment 3 of the present disclosure; FIG. 8 is a transmission view of a board electrode and a board as viewed from the minus Z-axis direction side (that is, a lower side) of the board electrode of the same device manufacturing apparatus; FIG. 9 is a cross-sectional view taken along the line 9 - 9 shown in FIG. 8; FIG. 10 is a view for explaining an ultrasonic bonding step in the same device manufacturing apparatus; FIG. 11 is a flowchart for explaining an inspection method of the same device manufacturing apparatus; and
FIG. 12 is a transmission view of a board electrode when an inspection is performed in a device apparatus according to Exemplary Embodiment 4 of the present disclosure.
DETAILED DESCRIPTION Preferred exemplary embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In the present specification and the drawings, components having substantially the same function are designated by the same reference numerals so that duplicate description will be omitted.
Exemplary Embodiment 1 Hereinafter, device manufacturing apparatus 300 according to Exemplary Embodiment 1 of the present disclosure will be described separately in terms of items.
Configuration of Device Manufacturing Apparatus 300 First, an example of a configuration of device manufacturing apparatus 300 according to Exemplary Embodiment 1 of the present disclosure will be described with reference to FIG. 1.
FIG. 1 is a configuration view of device manufacturing apparatus 300 according to Exemplary Embodiment 1 of the present disclosure.
Device manufacturing apparatus 300 of Exemplary Embodiment 1 includes inspection apparatus 101, bonding apparatus 114, and the like, and constitutes an apparatus for manufacturing device apparatus 200. Device apparatus 200 is, for example, an apparatus constituted by electrical components with a semiconductor, an apparatus constituted by electrical components without a semiconductor, or the like.
Hereinafter, in Exemplary Embodiment 1, a manufacturing apparatus of a device apparatus constituted by electrical components with a semiconductor will be described as device manufacturing apparatus 300.
In FIGS. 1 and later, the X-axis direction, the Y-axis direction, and the Z-axis direction represent a direction parallel to the X-axis, a direction parallel to the Y-axis, and a direction parallel to the Z-axis, respectively. The X-axis direction and the Y- axis direction are orthogonal to each other. The X-axis direction and the Z-axis direction are orthogonal to each other. The Y-axis direction and the Z-axis direction are orthogonal to each other. The XY plane represents a virtual plane parallel to the X-axis direction and the Y-axis direction. The XZ plane represents a virtual plane parallel to the X-axis direction and the Z-axis direction. The YZ plane represents a 5 virtual plane parallel to the Y-axis direction and the Z-axis direction. Of the X-axis directions, it is assumed that a direction indicated by the arrow is the plus X-axis direction, and a direction opposite to the plus direction is the minus X-axis direction. Of the Y-axis directions, it is assumed that a direction indicated by the arrow is the plus Y-axis direction, and a direction opposite to the plus direction is the minus Y-axis direction. Of the Z-axis directions, it is assumed that a direction indicated by the arrow is the plus Z-axis direction, and a direction opposite to the plus direction is the minus Z-axis direction. The Z-axis direction is, for example, equal to the vertical direction, and the X-axis direction and the Y-axis direction are, for example, equal to the horizontal direction.
As shown in FIG. 1, device apparatus 200 that is manufactured by device manufacturing apparatus 300 of Exemplary Embodiment 1 includes chip 102, chip electrode 103, bump 104, board electrode 105, board 106, and the like. Device apparatus 200 configures an apparatus integrally formed by the ultrasonic bonding or the thermocompression bonding method. Chip 102 has, for example, a plurality of chip electrodes 103 disposed around one surface of chip 102. Chip electrode 103 includes bump 104 made of a conductive material formed on a surface of chip electrode 103.
Configuration of Inspection Apparatus 101 of Device Manufacturing Apparatus 300 Next, an example of a configuration of inspection apparatus 101 of device manufacturing apparatus 300 will be described.
As shown in FIG. 1, inspection apparatus 101 of device manufacturing apparatus 300 includes measurer 108, processor 109, and the like. Board 106 includes a plurality of board electrodes 105 disposed at positions facing bump 104 of chip 102. The material of board electrode 105 may be any metal that can be solid-phase bonded to the material of bump 104, and examples thereof include gold and aluminum, for example. Further, board 106 has a plurality of piezoresistive type sensors 107 embedded directly below board electrode 105. Piezoresistive type sensor 107 has a piezoresistive effect in which a resistance value changes when mechanical strain is applied. The details of the configuration of piezoresistive type sensor 107 will be described later.
One end of electric wiring 110 is connected to piezoresistive type sensor 107. The other end of electric wiring 110 is connected to measurer 108. Processor 109 is electrically connected to measurer 108 via electric wiring. Processor 109 is an example of a calculator of the amount of positional deviation of Exemplary Embodiment 1.
Configuration of Piezoresistive Type Sensor 107 Next, the configuration of piezoresistive type sensor 107 will be described with reference to FIGS. 2 and 3.
FIG. 2 is a transmission view of board electrode 105 and board 106 when device manufacturing apparatus 300 is viewed from the Z-axis direction. FIG. 3 is a cross-sectional view taken along the line 3 - 3 of board 106 shown in FIG. 2.
As described above, piezoresistive type sensor 107a, piezoresistive type sensor 107b, piezoresistive type sensor 107c, and piezoresistive type sensor 107d are disposed directly below board electrode 105.
In the following, when piezoresistive type sensor 107a, piezoresistive type sensor 107b, piezoresistive type sensor 107c, and piezoresistive type sensor 107d are not distinguished, they may be simply referred to as "sensor 107".
Specifically, as shown in FIG. 3, sensor 107 is embedded in insulating layer 111 constituting board 106 directly below board electrode 105 (minus Z direction). As shown in FIG. 2, the shape of sensor 107 is, for example, a rectangular shape.
The lengths of a short side and a long side of sensor 107 are represented by W and Ln (n is a natural number of 1 or more), respectively.
The plurality of sensors 107 are arranged radially, for example, with respect to center O of board electrode 105. That is, the plurality of sensors 107 are arranged so as to surround center O of board electrode 105. Each of one short sides of the plurality of sensors 107 is disposed so as to face each other. Each of the long sides of the plurality of sensors 107 is disposed along a virtual line (not shown) extending radially from center O of board electrode 105.
As shown in FIG. 2, it is preferable that the plurality of sensors 107 are disposed at equal intervals on a virtual circle (not shown) centered on center O of board electrode 105. As a result, the bonding surface of bump 104 can be surely overlapped with at least one of sensors 107 among the plurality of sensors 107 within arange of the mounting position accuracy of chip 102 with respect to board 106.
In Exemplary Embodiment 1, the configuration, in which four sensors 107 are disposed, has been described as an example, but the present disclosure is not limited to this. Any number of sensors 107 may be used as long as the sensors 107 are two or more and do not overlap with each other.
Sensor 107 is made of, for example, an n-type Si material having a piezoresistive effect, but is not particularly limited to the n-type Si. The sensor 107 may be configured to make of, for example, a metal such as CuNi-based, NiCr- based, or Ti, or may be configured to make of a semiconductor such as Ge or GaAs that utilizes the piezoresistive effect.
In Exemplary Embodiment 1, the example in which piezoresistive type sensor 107 is used has been described, but the present disclosure is not limited to this. In addition to piezoresistive type sensor 107, any sensor may be used as long as it is a sensor whose physical properties change when pressurized, for example.
As shown in FIG. 2, in sensor 107, electric wiring 110 is connected to each of two facing short sides. Electric wiring 110 is a wiring for measuring resistance value Rn (nis a natural number of 1 or more) of sensor 107 from one short side of sensor 107 to the other short side of sensor 107. Specifically, electric wirings 110 are electric wiring 110a, electric wiring 110b, electric wiring 110c, and electric wiring 110d for measuring resistance value R1, resistance value R2, resistance value R3, and resistance value R4 of piezoresistive type sensor 107a, piezoresistive type sensor 107b, piezoresistive type sensor 107c, and piezoresistive type sensor 107d.
Among the plurality of sensors 107, at least one sensor 107 (corresponding to piezoresistive type sensor 107a in FIG. 2) has electric wiring 112 connected to the inside in the long side direction. “r” shown in FIG. 2 represents a connection position of electric wiring 112 to sensor 107.
Electric wiring 112 is electrically connected to measurer 108 (see FIG. 1) described above.
Electric wiring 112 connected to connection position r is a wiring for measuring resistance value Rref of sensor 107. That is, resistance value Rref is a resistance value of sensor 107 in a region from a portion of electric wiring 110a, which is connected to the short side of sensor 107 on center O side, to connection position r among the resistance values in the long side direction of sensor 107.
Change in Resistance Value Due to Piezoresistive Effect Next, the change in resistance value due to the piezoresistive effect of piezoresistive type sensor 107 will be described.
As shown in FIG. 2, when bump 104 of chip 102 is pressed against board electrode 105, the pressing force of bump 104 is applied to bonding surface S (also referred to as bump bonding surface S) that is surrounded by the virtual annular- shaped broken line. Due to the pressing force, strain e is induced in the four sensors 107 disposed directly below board electrode 105.
Above-mentioned bonding surface S is a surface in which bonding surface S of bump 104 on board electrode 105 is viewed in a plan view from the Z-axis direction at a predetermined time during the mounting process.
At this time, when strain e is uniformly applied with respect to sensor 107, resistance value Rn (n is a natural number of 1 or more) in the long side direction of sensor 107 changes from Rn0 to Rn0 + ARe. Rn0 is a resistance value in the long side direction of sensor 107 before bump 104 is pressed against board electrode
105. ARe is the amount of change (amount of increase or amount of decrease) in resistance value of sensor 107 in which strain e is generated.
The ratio of change ARe / Rn0 of resistance value Rn is represented by the following equation (1).
ARe/Rn0 = Kx x exx + Ky x eyy + Kz x ezz ... (1) exx in equation (1) represents the vertical strain component of strain e in the X-axis direction. exx is a strain component that spreads board electrode 105 in the X-axis direction. Kx in equation (1) represents the gauge ratio of exx (piezoresistive coefficient against strain). Value of K differs depending on the type of material constituting sensor 107 and the crystal direction of the material constituting sensor
107.
eyy in equation (1) is a vertical strain component of strain e in the Y-axis direction. eyy is a strain component that spreads board electrode 105 in the Y-axis direction. Ky in equation (1) represents the gauge ratio of eyy.
ezz in equation (1) is a vertical strain component of strain e in the Z-axis direction. ezz is a strain component that compresses board electrode 105. Kz in equation (1) represents the gauge ratio of ezz.
Role of Piezoresistive Type Sensor 107 Next, the role of piezoresistive type sensor 107 will be described.
The area of bonding surface S increases with the deformation of bump 104 during the mounting process. L'n (n is a natural number of 1 or more) shown in FIG.
2 represents the length of the region in which sensor 107 and bonding surface S overlap with each other in the long side direction of sensor 107. Specifically, lengths L'n correspond to length L'1, length L'2, length L'3, and length L'4 shown in FIG. 2.
That is, the area of the region in which sensor 107 and bonding surface S overlap with each other can be represented by the area = W x L'n. W is the length of sensor 107 in the short side direction.
When the pressing force of bump 104 acts on bonding surface S, strain eS is induced in sensor 107 in the region in which sensor 107 and bonding surface S overlap with each other.
At this time, in each of the plurality of sensors 107, a region in which the resistance value changes due to the induced strain eS (= W x L'n) and a region in which the resistance value does not change (= W x (L - L'n)) exist.
When the mounting process is a thermocompression bonding method, the compression strain (vertical strain ezz) is uniformly generated in bonding surface S by applying a mounting load.
At this time, vertical strain exx has a very small value with respect to vertical strain ezz. The reason is that the Poisson's ratio vx of the material of sensor 107 becomes vx << 1. Similarly, vertical strain eyy has a very small value with respect to vertical strain ezz because the Poisson's ratio vy of the material of sensor 107 becomes vy << 1.
As a result, the value of strain eS generated in the region in which sensor 107 and bonding surface S overlap with each other becomes uniform (equal) at any position (region) in bonding surface S.
On the other hand, when the mounting process is the ultrasonic bonding, vertical strain exx, vertical strain eyy, and vertical strain ezz are generated in strain eS in the region in which sensor 107 and bonding surface S overlap with each other. The generated vertical strain exx, vertical strain eyy, and vertical strain ezz are superimposed with the strain generated in the plane direction (parallel with respect to the XY plane) due to the ultrasonic vibration. At this time, the amount of superimposition of the strain in the plane direction due to the ultrasonic vibration increases as bonding surface S approaches the region in the vicinity of the center to the region near the outer periphery. However, the strain in the plane direction is the repetitive stress of ultrasonic vibration. Therefore, when the strain in the plane direction is handled as an averaged value in a minute time, the value of strain eS generated in the region in which sensor 107 and bonding surface S overlap with each other becomes uniform (equal) at any position (region) in bonding surface S.
In a case where the resistance change ratio when strain eS is uniformly applied to sensor 107 is defined as ARS/Rn0, the resistance value Rn (specifically, R1, R2, R3, and R4) in the long side direction of sensor 107 is represented by the following equation (2). Rn = ARS/Rn0 x (L'n/Ln) x Rn0 + (Ln - L'n)/Ln x Rn0 ... (2) ARS in equation (2) is the amount of change in resistance value of sensor 107 in which strain eS is generated.
On the other hand, for example, among the resistance values in the long side direction of piezoresistive type sensor 107a, the region from a portion of electric wiring 110a, which is connected to the short side of piezoresistive type sensor 107a on center O side, to connection position r is fit within bonding surface S. Therefore, strain eS is uniformly induced in the region of piezoresistive type sensor 107a that fits in bonding surface S. As a result, the resistance change ratio ARref/Rref0 is represented by the following equation (3).
ARref/Rref0 = ARS/Rn0 … (3) Rref0 of equation (3) is, for example, a resistance value in the region from the portion of electric wiring 110a, which is connected to the short side of piezoresistive type sensor 107a on the center O side, to connection position r, before bump 104 is pressed against board electrode 105.
Therefore, the change in resistance value Rn of each of sensors 107 and the change in at least one or more resistance values Rref are measured. As a result, itis possible to estimate length L'n of each of sensors 107 in the long side direction based on equations (2) and (3).
At this time, it is preferable to configure sensor 107 such that the aspect ratio of the short side and the long side of sensor 107 is L >> W. That is, for example, when the contour of bonding surface S has a curvature, the region in which sensor 107 and bonding surface S overlap with each other is not strictly rectangular. Therefore, length L'n that is estimated based on equations (2) and (3) on the premise of a rectangle includes an error. However, when L >> W, the error can be reduced. Thereby, the accuracy of the estimated length L'n can be improved.
It is preferable that each of sensors 107 is configured to be disposed radially with respect to center O of board electrode 105 and extend to the outside of the maximum bonding surface S that can be taken during the mounting process. This makes it possible to widen the detection range of the estimated length L'n.
In the case of using cylindrical bump 104, it is preferable that the length from connection position r of electric wiring 112 to center O of board electrode 105 is shorter than the value obtained by subtracting the maximum value of the mounting variation from the top head radius (corresponds to the side that faces board electrode 105) of bump 104. When bump 104 is a stud bump, it is preferable that the length from connection position r of electric wiring 112 to center O of board electrode 105 is shorter than the value obtained by subtracting the maximum value of the mounting variation from the base radius (corresponds to the side that connects to chip 102) of bump 104.
That is, the length from connection position r of electric wiring 112 to center O of board electrode 105 is shortened. As a result, after the start of the mounting process, a mounting load is applied to bump 104, and at the moment when bump 104 begins to crush, the measurement range of resistance value Rref fits within bonding surface S. Therefore, it is possible to measure the change in length L'n from the initial stage of the mounting process.
The number of measurements of resistance value Rref is determined by the material of sensor 107 and the disposition direction. For example, sensor 107 is assumed to be a cubic material such as Si or Ge. It is assumed that a plurality of sensors 107 are formed from a layer of a single crystal having a cubic plane orientation (100) by etching so that the angle between the long sides of sensors 107 adjacent to each other becomes 90°. In this case, due to the symmetry of the crystal structure, the sensitivity and mechanical properties of the piezoresistive effect of each of sensors 107 become the same. Specifically, between each of sensors 107, gauge ratio KL in the long side direction in the XY plane, gauge ratio KW in the direction perpendicular to the long side direction (short side direction) in the XY plane, and gauge ratio Kz in the Z-axis direction have the same value, respectively. Poisson's ratio vL in the long side direction and Poisson's ratio VW in the short side direction of each of sensors 107 have the same value. Vertical strain eLL, which is induced in the long side direction of sensor 107, and vertical strain eWW, which is induced in the short side direction of sensor 107 have the same value due to the compression in the Z-axis direction.
From the above, resistance change ratio ARS/Rn0 when strain eS is uniformly applied to sensor 107 can be represented by the following equation (4), and resistance change ratio ARS/Rn0 of all the sensors 107 has the same value.
ARS/Rn0 = KL x eLL + KW x eWW + Kz x ezz ... (4) Thereby, among the plurality of sensors 107, when resistance value Rref of any one of sensors 107 is measured, the overlapping length L'n of all the sensors 107 can be estimated.
When the sensitivity and the mechanical properties of the piezoresistive effect of sensor 107 in each of the directions are different among the plurality of sensors 107, resistance value Rref provided in each of sensors 107 may be measured. As a result, overlapping length L'n can be estimated even in the case of sensors 107 having different properties. Modification Example Hereinafter, a modification example of device manufacturing apparatus 300 according to Exemplary Embodiment 1 will be described with reference to FIG. 4.
FIG. 4 is a configuration view of a modification example of device manufacturing apparatus 300 according to Exemplary Embodiment 1 of the present disclosure.
As shown in FIG. 4, device manufacturing apparatus 300 according to the modification example includes a plurality of sensors 107 and piezoresistive type sensor 113 dedicated to measuring resistance value Rref.
Piezoresistive type sensor 113 is formed, for example, in a rectangular shape. Piezoresistive type sensor 113 is embedded, for example, directly below center O of board electrode 105 (in the minus Z-axis direction).
Two electric wirings 112 are connected to piezoresistive type sensor 113. For example, one side of electric wiring 112 is connected to the center of piezoresistive type sensor 113. The other side of electric wiring 112 is connected to one of the four sides of piezoresistive type sensor 113.
Measurer 108 (see FIG. 1) measures resistance value Rref in the region from the portion of one side of electric wiring 112, which is connected to piezoresistive type sensor 113, to the portion in which the other side of electric wiring 112 is connected.
That is, according to the above modification example, piezoresistive type sensor 113 is provided. As a result, even when the length of each of sensors 107 in the long side direction is short, length L'n (see FIG. 2) can be estimated based on the measured resistance value Rref of piezoresistive type sensor 113 and resistance value Rn of each of sensors 107. The length of each of sensors 107 in the long side direction can be shortened. Therefore, the degree of freedom in designing board 106 is improved.
Inspection Method for Device Manufacturing Apparatus 300 Next, the inspection method of device manufacturing apparatus 300 will be described with reference to FIG. 5.
FIG. 5 is a flowchart for explaining an inspection method of device manufacturing apparatus 300.
Inspection apparatus 101 of device manufacturing apparatus 300 is used, for example, installed in bonding apparatus 114 shown in FIG. 1 and inspects device apparatus 200 to be manufactured.
Bonding apparatus 114 includes stage 115 on which board 106 is installed, bonding head 116 that holds and presses chip 102, and the like.
As shown in FIG. 5, first, bonding apparatus 114 transports chip 102 toward board 106 in a state in which chip 102 is fixed to the front end portion of bonding head 116 (step S1). Bonding apparatus 114 operates such that chip 102 comes into contact with board 106 via bump 104. Next, when chip 102 comes into contact with board 106 via bump 104, a load, ultrasonic power, heat, or the like are applied by bonding apparatus 114 in the contacted state. As a result, chip 102 is mounted on board 106 (step S2). At this time, an elastic deformation and a plastic deformation are induced in bump 104 and board electrode 105. With the elastic deformation and the plastic deformation, the mechanical strain is also induced in sensor 107 via insulating layer 111.
At this time, resistance value Rn of each of the plurality of sensors 107 changes according to the amount of mechanical strain due to the piezoresistive effect. Measurer 108 measures resistance values Rn of the plurality of sensors 107 that change during the mounting process in real time, and transmits the measured data to processor 109 (step S3).
When the mounting process is the ultrasonic bonding, as described above, resistance value Rn of sensor 107 fluctuates according to the ultrasonic vibration. Therefore, measurer 108 transmits the average value of resistance value Rn for a minute time to processor 109 as the measurement data.
Next, processor 109 calculates length L'n of the overlapping region between each of sensors 107 and bonding surface S based on the acquired measurement data (step S4).
Next, processor 109 calculates positional information related to a position of each of sensors 107 and length L'n calculated from the dimensional information related to the dimensions of each of sensors 107 by converting them to coordinates Pn (n is a natural number of 1 or more) which is a point on the contour of bonding surface S when center O of board electrode 105 is defined as an origin point (step S5). As a result, a plurality of points (corresponding to coordinates P1, coordinates P2, coordinates P3, and coordinates P4 shown in FIG. 2), in which the contour of bonding surface S and sensor 107 overlap with each other, are clarified. Next, processor 109 estimates the contour of bonding surface S from the polygon formed by connecting coordinates Pn adjacent to each other (step S6).
The positional information and the dimensional information of each of the above sensors 107 may be set in advance in the storage of processor 109 or may be configured to be transmitted from the external apparatus of processor 109.
The contour of bonding surface S is represented by a broken line forming the periphery of bonding surface S having center O' as the origin point shown in FIG. 2.
Next, processor 109 calculates the coordinates of center O' of bonding surface S when center O of board electrode 105 is defined as the origin point from the estimated contour of bonding surface S (step S7). Processor 109 calculates the amount of deviation between center O' of bonding surface S and center O of board electrode 105 (amount of deviation in mounting position) (step S8). The amount of deviation in mounting position represents the amount of deviation in mounting position of bump 104 on board electrode 105.
At this time, when the shape of bump 104 is circular, bonding surface S is also circular in the thermocompression bonding method. In this case, when coordinates Pn have at least three points, it is possible to immediately estimate the radius and the center position of bonding surface S. Therefore, at least three sensors 107 may be disposed directly below board electrode 105.
When the shape of bump 104 is elliptical and the thermocompression bonding method is used, or when the shape of bump 104 is circular and the ultrasonic bonding is used, bonding surface S is elliptical. When the contour of bonding surface Sis elliptical, among four sensors 107, two sensors 107 are disposed such that the long side direction of sensor 107 is along the long axis direction of elliptical bonding surface S and the short sides of the sensors 107 face each other. Two sensors 107 other than the above-mentioned two sensors 107 are disposed such that the long side direction of sensor 107 is along the short axis direction of elliptical bonding surface S and the short sides of the sensors 107 face each other. As a result, the four coordinates Pn on the contour of bonding surface S can be obtained. The contour of bonding surface S can be estimated based on these obtained coordinates Pn. In ultrasonic bonding, the direction of ultrasonic vibration is the long axis direction of elliptical bonding surface S.
When the area of bonding surface S hardly changes during the mounting process, two sensors 107 may be embedded directly below board electrode 105. As a result, from coordinates Pn obtained from two sensors 107 and the shape of the surface of bump 104 before bonding that opposes board electrode 105, it is possible to immediately obtain the coordinates of center O' of bonding surface S and the amount of deviation in mounting position. According to Exemplary Embodiment 1, the plurality of sensors 107 are disposed radially and based on the resistance values of the plurality of sensors 107 that change during the mounting process, the shape of bonding surface S to board electrode 105 and the amount of deviation in mounting position can be estimated in a non-destructive manner.
Thereby, for example, the shape of bonding surface S and the amount of deviation in mounting position can be estimated in a non-destructive manner without depending on the statistical guarantee by increasing n in the breakdown test. As a result, it is possible to prevent the outflow of products that can be determined to be defective to the market in advance.
According to Exemplary Embodiment 1, the change in shape of bonding surface S and the amount of deviation in mounting position during the mounting process can be monitored in real time. Therefore, it is possible to easily perform the detection of the timing at which the deviation in mounting position occurs and derivation of the mounting condition for forming the desired bump bonding surface shape. As a result, the defect analysis or a significant reduction in development period can be expected.
Exemplary Embodiment 2 Hereinafter, device manufacturing apparatus 300 according to Exemplary Embodiment 2 of the present disclosure will be described with reference to FIG. 6.
FIG. 6 is a view showing a configuration example of board electrode 205 and board 206 included in device manufacturing apparatus 300 according to Exemplary Embodiment 2 of the present disclosure. FIG. 6 shows a transmission view of board electrode 205 and board 206 as viewed from the Z-axis direction. In FIG. 6, the same reference numerals are used for the same components as those shown in FIG. 2, and the description thereof will be omitted.
As shown in FIG. 6, device manufacturing apparatus 300 of Exemplary Embodiment 2 includes board electrode 205 instead of board electrode 105 of Exemplary Embodiment 1.
Further, device manufacturing apparatus 300 of Exemplary Embodiment 2 includes piezoresistive type sensor 208a, piezoresistive type sensor 208b, piezoresistive type sensor 208c, and piezoresistive type sensor 208d instead of the plurality of piezoresistive type sensors 107 of Exemplary Embodiment 1.
Hereinafter, when piezoresistive type sensor 2084, piezoresistive type sensor 208b, piezoresistive type sensor 208c, and piezoresistive type sensor 208d are not distinguished, they are simply referred to as "sensor 208".
Similar to the plurality of sensors 107 of Exemplary Embodiment 1, the plurality of sensors 208 are disposed radially with respect to center O of board electrode 205.
Each of sensors 208 includes a plurality of sensor modules 207.
Sensor module 207 is made of, for example, an n-type Si material having a piezoresistive effect. The plurality of sensor modules 207 are linearly disposed apart from each other and are embedded in board 106 as shown in FIG. 3.
Sensor module 207 has a first side and a second side that face each other in a direction orthogonal to the arrangement direction, for example, configured with a rectangular shape.
Electric wiring 2104, electric wiring 210b, electric wiring 210c, and electric wiring 210d, which are collectively referred to as electric wiring 210, are connected to sensor module 207, respectively. Specifically, one side of electric wiring 210 is connected to the first side of the four sides forming sensor module 207. The other side of electric wiring 210 is connected to the second side of the four sides forming sensor module 207, which is the opposite side to the first side of sensor module 207.
That is, electric wiring 210 is connected to each of sensor modules 207 constituting one sensor 208 at the same position. Electric wiring 210 is connected to measurer 108 shown in FIG. 1.
In Exemplary Embodiment 2, the configuration, in which four sensors 208 are disposed, has been described as an example, but the present disclosure is not limited to this. Any number of sensors 208 may be used as long as the sensors 208 are two or more and do not overlap with each other.
Role of Piezoresistive Type Sensor 208 Next, the role of piezoresistive type sensor 208 will be described.
Cn (n is a natural number of 1 or more) shown in FIG. 6 represents sensor module 207 existing in bonding surface S of bump 104 among the plurality of sensor modules 207 constituting sensor 208. For example, C1 represents sensor module 207 existing in bonding surface S of bump 104 among the plurality of sensor modules 207 constituting piezoresistive type sensor 208a. The same applies to C2, C3, and C4 shown in FIG. 6.
Dn (n is a natural number of 1 or more) shown in FIG. 6 represents sensor module 207 existing outside bonding surface S of bump 104 among the plurality of sensor modules 207 constituting sensor 208. For example, D1 represents sensor module 207 existing outside bonding surface S of bump 104 among the plurality of sensor modules 207 constituting piezoresistive type sensor 208a. The same applies to D2, D3, and D4 shown in FIG. 6.
When the pressing force of bump 104 acts on bonding surface S, strain eS is induced in sensor module 207 existing in bonding surface S of bump 104.
At this time, as described above, each of sensors 208 has a sensor module 207 within the range of bonding surface S indicated by Cn and a sensor module 207 outside the range of bonding surface S indicated by Dn.
That is, sensor module 207 within the range of bonding surface S indicated by Cn is one or a plurality of sensor modules whose resistance value changes depending on strain eS (for example, corresponding to R1a, R1b, and R1c).
On the other hand, sensor module 207 outside the range of bonding surface S indicated by Dn is one or a plurality of sensor modules whose resistance value does not change depending on strain eS (for example, corresponding to R1d).
At this time, when the resistance change ratio when strain eS is uniformly applied to sensor module 207 is defined as ARS/Rn0, among the plurality of sensor modules 207 in the range of bonding surface S indicated by Cn, the resistance change ratio of sensor module 207 in which the entire sensor module 207 overlaps bonding surface S becomes ARS/Rn0. On the other hand, among the plurality of sensor modules 207 in the Cn range, the resistance change ratio of sensor module 207, of which a part thereof overlaps bonding surface S, becomes a value within the range from 0 (zero) to ARS/Rn0 other than 0 (zero) and ARS/RnO.
On the other hand, among the plurality of sensor modules 207 constituting one sensor 208, sensor module 207 closest to center O of board electrode 205 overlaps in bonding surface S at the earliest time in the mounting process.
Therefore, processor 109 compares the resistance change ratio of sensor module 207 closest to center O of board electrode 205 among the plurality of sensor modules 207 constituting one sensor 208 and the resistance change ratio of the other sensor modules 207. As a result, processor 109 can determine sensor module 207 that overlaps with bonding surface S.
The positional information related to the position of each of sensors 208 and the dimensional information related to the dimensions of each of sensors 208 are known.
Therefore, processor 109 calculates distance PCn (n is a natural number of 1 or more) shown in FIG. 6 based on the positional information, the dimensional information, and the information related to sensor module 207 that overlaps bonding surface S of each of sensors 208.
Distance PCn is a distance from center O of board electrode 205 to sensor module 207 positioned on the outermost peripheral side of board electrode 205 in which the resistance change ratio becomes a value within the range from 0 (zero) to ARS/Rn0 other than ARS/Rn0, or 0 (zero) and ARS/Rn0. For example, distance PC1 is a distance from center O of board electrode 205 to sensor module 207 positioned on the outermost peripheral side of board electrode 205, which overlaps with bonding surface S and constituting piezoresistive type sensor 208a. The same applies to distance PC2, distance PC3, and distance PC4 shown in FIG. 6.
According to Exemplary Embodiment 2, sensors 208 including the plurality of sensor modules 207 are disposed radially, and distance PCn from center O of board electrode 205 to sensor module 207 in which the resistance change ratio is changed is calculated. As a result, the shape of bonding surface S to board electrode 205 and the amount of deviation in mounting position can be estimated in a non-destructive manner.
According to Exemplary Embodiment 2, the size or the disposition interval of sensor module 207 constituting sensor 208 can be freely designed. Therefore,
functions other than inspection of the shape of bonding surface S and the amount of deviation in mounting position can be easily added to the same board electrode 205. Exemplary Embodiment 3 Hereinafter, device manufacturing apparatus 401 according to Exemplary Embodiment 3 of the present disclosure will be described separately in terms of items.
Configuration of Device Manufacturing Apparatus 401 First, a configuration of device manufacturing apparatus 401 according to Exemplary Embodiment 3 of the present disclosure will be described with reference to FIG. 7.
FIG. 7 is a configuration view of device manufacturing apparatus 401 according to Exemplary Embodiment 3 of the present disclosure.
Device manufacturing apparatus 401 of Exemplary Embodiment 3 is an apparatus for manufacturing device apparatus 500. Specifically, device manufacturing apparatus 401 is, for example, a semiconductor manufacturing apparatus, a manufacturing apparatus for a device apparatus such as an electrical component without a semiconductor.
Hereinafter, in Exemplary Embodiment 3, the manufacturing apparatus of semiconductor device apparatus 500 will be described as device manufacturing apparatus 401.
As shown in FIG. 7, device apparatus 500 of Exemplary Embodiment 3 includes chip 405, chip electrode 406, bump 408, board electrode 407, board 403, and the like. Device manufacturing apparatus 401 constitutes apparatus for integrally forming device apparatus 500 by using the ultrasonic bonding.
As shown in FIG. 7, device manufacturing apparatus 401 includes stage 402 on which board 403 is installed, bonding head 404, load cell 410, vertical strain sensor 411 that is a first strain detector, plane strain sensor 412 that is a second strain detector, measurer 413, memory 414, processor 415, and the like. Load cell 410 measures the load applied from chip 405 toward board 403 in the Z-axis direction. Vertical strain sensor 411 and plane strain sensor 412 correspond to sensors described in Exemplary Embodiment 1.
Bonding head 404 includes ultrasonic vibrator 409 that generates ultrasonic vibration, drive mechanism 400 that moves chip 405 in the Z-axis direction, drive controller 416 that controls the operation of drive mechanism 400, and the like.
Drive mechanism 400 extends from drive controller 416 in the minus Z-axis direction, for example. Chip 405 is fixed to ultrasonic vibrator 409, which is the front end portion of drive mechanism 400. A plurality of chip electrodes 406 are disposed on chip 405. The plurality of chip electrodes 406 are arranged apart from each other, for example, in the X-axis direction. Chip electrode 406 is made of a material such as copper. The material of chip electrode 406 is not limited to copper, and may be any metal that can be solid-phase bonded to bump 408, and may be, for example, gold or aluminum.
Chip electrode 406 includes a plurality of conductive bumps 408 disposed on end surface 406a in the minus Z-axis direction. The plurality of bumps 408 are arranged apart from each other in the X-axis direction. The plurality of bumps 408 are made of a material such as copper. The material of bump 408 is not limited to copper and may be, for example, a conductive material such as gold, silver, aluminum, platinum, or chromium.
Further, the plurality of board electrodes 407 are disposed at positions separated from end surface 408a of bump 408 in the minus Z-axis direction by a certain distance. The plurality of board electrodes 407 are disposed on end surface 403a (also referred to as a board surface) of board 403 in the plus Z-axis direction.
The plurality of board electrodes 407 are made of a metal material capable of solid- phase bonding with bump 408, similar to the material of chip electrode 406.
End surface 407a of board electrode 407 in the plus Z-axis direction is disposed so as to face end surface 408a of bump 408 in the minus Z-axis direction.
On the other hand, end surface 407b of board electrode 407 in the minus Z-axis direction faces end surface 403a of board 403 in the plus Z-axis direction. In other words, end surface 407b of board electrode 407 is an end surface on the side opposite to bump 408 of board electrode 407.
Vertical strain sensor 411 and plane strain sensor 412 are electrically connected to measurer 413 via electric wiring 418 in a state of being embedded in board 403, for example. The details of vertical strain sensor 411 and plane strain sensor 412 will be described later.
Although the configuration in which bump 408 is fixed to chip electrode 406 has been described as an example in FIG. 7, bump 408 may be fixed to board electrode 407. In this case, chip electrode 406 is disposed so as to face bump 408 at a position separated from end surface 406b of bump 408 that is fixed to board electrode 407 in the plus Z-axis direction by a certain distance.
Bonding head 404 transports chip 405 toward board 403 in a state in which chip 405 is fixed to the front end portion of bonding head 404. When chip 405 comes into contact with board 403 via bump 408, bonding head 404 applies the ultrasonic vibration to chip 405 in the contacted state. As a result, chip 405 is bonded to board
403.
Memory 414 is electrically connected to measurer 413, ultrasonic vibrator 409, load cell 410, and processor 415 via electric wiring. Memory 414 is, for example, storage configured with a random access memory (RAM), a read only memory (ROM), and the like. Memory 414 stores a program for implementing a function of device manufacturing apparatus 401. The stored program is executed by processor
415. As a result, a plurality of functions included by device manufacturing apparatus 401 are implemented.
Processor 415 is electrically connected to drive controller 416 via electric wiring. Processor 415 is, for example, a processor such as a central processing unit (CPU), a system large scale integration (LSI), a microcomputer, and a digital signal processor (DSP).
Measurer 413 is electrically connected to vertical strain sensor 411 and plane strain sensor 412 via electric wiring 418. Measurer 413 is a processor such as a CPU.
Configuration of Vertical Strain Sensor 411 and Plane Strain Sensor 412 Next, the configurations of vertical strain sensor 411 and plane strain sensor 412, which are examples of the sensors, will be described with reference to FIGS. 8 and 9.
FIG. 8 is a transmission view of board electrode 407 and board 403 as viewed from the minus Z-axis direction side (that is, a lower side) of board electrode 407. FIG. 9 is a cross-sectional view taken along the line 9 - 9 shown in FIG. 8.
As shown in FIGS. 8 and 9, vertical strain sensor 411 and plane strain sensor 412 are disposed in a region overlapping with board electrode 407 in the Z-axis direction. Vertical strain sensor 411 is a sensor that detects the amount of strain of an electrode (for example, board electrode 407) in the Z-axis direction.
Vertical strain sensor 411 and plane strain sensor 412 are configured with, for example, a strain gauge. The strain gauge outputs, for example, a voltage, as the amount of strain, based on the amount of elastic deformation of board electrode 407 or the resistance value corresponding to the amount of plastic deformation. The strain gauge may be made of, for example, a metal such as CuNi-based, NiCr-based, or Ti, or a semiconductor such as Si, Ge, or GaAs utilizing the piezoresistive effect. Vertical strain sensor 411 and plane strain sensor 412 detect strain amount information in real time.
Vibration direction D and vibration direction D' shown in FIG. 8 indicate a direction of the ultrasonic vibration applied from ultrasonic vibrator 409. Vibration direction D is, for example, equal to the minus X-axis direction, and vibration direction D' is equal to the plus X-axis direction. Vibration direction D and vibration direction D' are not limited to the X-axis direction and may be any direction parallel to the XY plane.
Plane strain sensor 412 is a sensor that detects the amount of strain proportional to the vibration width in a direction of the ultrasonic vibration applied from ultrasonic vibrator 409 (direction parallel to the XY plane).
Vertical strain sensor 411 and plane strain sensor 412 are embedded in board 403 as described above. Specifically, vertical strain sensor 411 and plane strain sensor 412 are disposed on board 403 so as to be covered with insulating layer 417 that is formed on the surface of board 403.
The method of disposing vertical strain sensor 411 and plane strain sensor 412 on board 403 is not limited to the above method. For example, a part of vertical strain sensor 411 and plane strain sensor 412 may be embedded in a recess that is formed on the surface of board 403, and board electrode 407 may be disposed thereon.
However, when disposition is performed in a form that vertical strain sensor 411 and plane strain sensor 412 are embedded in the recess of board 403, the contact areas of each of vertical strain sensor 411 and plane strain sensor 412 with respect to board 403 are increased. As a result, the amount of strain of board electrode 407 is less likely to be transmitted to each of vertical strain sensor 411 and plane strain sensor 412. Therefore, the detection sensitivity of vertical strain sensor 411 and plane strain sensor 412 may decrease.
In contrast to this, as shown in FIG. 9, in a case where vertical strain sensor 411 and plane strain sensor 412 are covered with insulating layer 417 and embedded in board 403, the processing of board 403 such as a recess becomes unnecessary. Therefore, vertical strain sensor 411 and plane strain sensor 412 can be easily insulated from board electrode 407 simply by using insulating layer 417 such as a resist. The amount of strain of board electrode 407 is easily transmitted to each of vertical strain sensor 411 and plane strain sensor 412. As a result, the structure of board 403 can be simplified, and the reliability is improved. It is possible to suppress an increase in the manufacturing cost of board 403. The sensitivity of detecting the amount of strain of board electrode 407 is improved. That is, it is more preferable that vertical strain sensor 411 and plane strain sensor 412 are covered with insulating layer 417 and embedded in board 403.
The disposition position of vertical strain sensor 411 and plane strain sensor 412 on board 403 is, for example, directly below board electrode 407. The position directly below board electrode 407 is, for example, within a region (that is, a normal projection) in which board electrode 407 is projected toward board 403 in the Z-axis direction. The position directly below board electrode 407 includes in the vicinity of the center point of board electrode 407 which is projected onto board 403, and in the vicinity of the peripheral edge portion of board electrode 407.
By disposing vertical strain sensor 411 and plane strain sensor 412 directly below board electrode 407, the distance between board electrode 407, and vertical strain sensor 411 and plane strain sensor 412 can be reduced. Therefore, the amount of strain of board electrode 407 is easily transmitted to vertical strain sensor 411 and plane strain sensor 412. As a result, the sensitivity of detecting the amount of strain by vertical strain sensor 411 and plane strain sensor 412 is improved. That is, it is preferable that vertical strain sensor 411 and plane strain sensor 412 are disposed directly below board electrode 407.
Vertical strain sensor 411 and plane strain sensor 412 are not limited to being disposed directly below one board electrode 407 and may be dispersedly disposed directly below a plurality of board electrodes 407. For example, among the plurality of board electrodes 407, vertical strain sensor 411 is disposed directly below a first board electrode (for example, first board electrode 407 from the left in FIG. 1), plane strain sensor 412 may be disposed directly below a second board electrode other than the first board electrode (for example, second board electrode 407 from the left in FIG. 1).
That is, for example, a set of vertical strain sensor 411 and plane strain sensor 412 is disposed directly below one board electrode 407. In this way, positioning the disposition of vertical strain sensor 411 and plane strain sensor 412 on board 403 becomes easy. Therefore, the manufacturing cost of device apparatus 500 can be reduced.
Vertical strain sensor 411 and plane strain sensor 412 are dispersedly disposed directly below the plurality of board electrodes 407. In this way, the disposition layout of each of vertical strain sensor 411 and plane strain sensor 412 with respect to the position of each of board electrodes 407 is facilitated. That is, vertical strain sensor 411 and plane strain sensor 412 can be disposed at appropriate positions. Therefore, the accuracy of detecting the amount of strain of board electrode 407 by each of vertical strain sensor 411 and plane strain sensor 412 can be improved.
Bonding surface S shown in FIG. 8 is a plan view of the bonding surface between the electrode and bump 408 before the ultrasonic bonding step is started or immediately after the start, in the Z-axis direction. The above-mentioned "electrode" represents board electrode 407 when bump 408 is formed on chip 405 before chip 405 is bonded to board 403. The above-mentioned "electrode" represents a chip electrode 406 when bump 408 is formed on board electrode 407 before chip 405 is bonded to board 403.
Bonding surface S' shown in FIG. 8 represents a bonding surface between the "electrode", which is finally obtained by the ultrasonic bonding step as a result of the ultrasonic bonding step, and bump 408. Bonding surface S' is obtained by measuring the diameter of the top head of the bump after sharing the bonding sample that achieved the desired shear strength in the work of outputting a bonding condition. That is, the diameter of bonding surface S' corresponds to the diameter of the top head of the bump after sharing the bonding sample that achieved the desired shear strength in the work of outputting a bonding condition. Bonding surface S'is a portion surrounded by the contour of the top head of the bump after sharing.
Detection of Vertical Strain by Vertical Strain Sensor 411 Next, the detection of the vertical strain by vertical strain sensor 411 of device manufacturing apparatus 401 will be described.
Bonding surface S shown in FIG. 8 appears for the first time when bump 408 comes into contact with the "electrode" in the ultrasonic bonding step. Thereafter, it expands as the bonding between the "electrode" and bump 408 progresses, and finally expands to bonding surface S'.
At this time, the vertical strain generated on bonding surface S includes compression strain due to the mounting load and repeated strain of compression and tension due to the ultrasonic vibration. The compression strain due to the mounting load is uniform within the region of bonding surface S. On the other hand, in the repeated strain of compression and tension due to the ultrasonic vibration, the compression and the tension are reversed with center line Lc of bonding surface S shown in FIG. 8 as a boundary. Center line Lc is, for example, a line that substantially bisects (including bisectors) the above-mentioned "electrode" in the X- axis direction. Therefore, it is more preferable that vertical strain sensor 411 is embedded in the vicinity of center O of bonding surface S. Specifically, it is more preferable that vertical strain sensor 411 is embedded in board 403 such that the central portion of vertical strain sensor 411 is included in a virtual plane that passes through center O of bonding surface S and is parallel to the Y-axis, and in a virtual plane that passes through center O of bonding surface S and is parallel to the X-axis.
That is, vertical strain sensor 411 is embedded in the vicinity of center O of bonding surface S. In this way, from the initial stage state of the ultrasonic bonding step, it is possible to measure the vertical strain generated on bonding surface S without being affected by repeated stresses having different distributions in bonding surface S.
The size of vertical strain sensor 411 (the area of the normal projection of vertical strain sensor 411 on the XY plane) may be larger or smaller than the area of bonding surface S'. However, vertical strain sensor 411 outputs the average value of the vertical strain generated in the sensor area (the region where the strain is detected). Therefore, even when it finally expands to bonding surface S', the size of vertical strain sensor 411 is preferably smaller than bonding surface S'. As a result, the average value of the vertical strain can be obtained satisfactorily so that the compression strain can be measured with high accuracy.
Detection of Plane Strain by Plane Strain Sensor 412 Next, the detection of the plane strain by plane strain sensor 412 of device manufacturing apparatus 401 will be described.
The force that causes plane strain on bonding surface S differs between the initial stage of the ultrasonic bonding step and the middle to late stages of the ultrasonic bonding step.
Specifically, the initial stage plane strain of the ultrasonic bonding step is a repeated strain of compression and tension caused by the frictional force generated at an interface surface of bonding surface S by the mounting load and the ultrasonic vibration. On the other hand, the plane strain from the middle to late stages of the ultrasonic bonding step is the repeated strain of compression and tension caused by a bonding portion to receive the ultrasonic vibration after the interface surface of bonding surface S is bonded.
At this time, the degree of bonding of bonding surface S is biased within bonding surface S. Specifically, the bonding quality (for example, the degree of bonding is stronger) is improved on vibration direction D side or vibration direction D' side of the outer periphery of bonding surface S than center O of bonding surface S. This is because the frictional force generated on bonding surface S by the ultrasonic vibration acts most strongly in the vicinity of the part on vibration direction D side or vibration direction D' side of the outer periphery of bonding surface S. Therefore, a new surface is more likely to appear at a portion closer to the part on vibration direction D side or vibration direction D' side of the outer periphery of bonding surface S than center O of bonding surface S. As a result, the diffusion of metal atoms is likely to proceed on the new surface so that the degree of bonding of bonding surface S is improved.
Based on the above, it is more preferable that the plane strain sensor 412 is embedded in a portion in which the region, which is on vibration direction D side or vibration direction D' side of the outer periphery of bonding surface S of the entire board 403, is projected toward board 403. As a result, the change with time of the plane strain due to the progress of bonding can be detected by plane strain sensor 412 with the highest sensitivity.
The direction of the plane strain measured by plane strain sensor 412 is preferably equal to vibration direction D or vibration direction D'. Usually, the direction of plane strain also includes a direction parallel to a line segment forming an angle of, for example, 0° to £15° with respect to vibration direction D or vibration direction D'. Therefore, the direction of the plane strain measured by plane strain sensor 412 is made equal to vibration direction D or vibration direction D'. As a result, the change in the plane strain generated by the application of ultrasonic vibration can be detected by plane strain sensor 412 with the highest sensitivity.
Operation of Device Manufacturing Apparatus 401 Next, the operation of device manufacturing apparatus 401 will be described.
First, drive controller 416 controls and operates drive mechanism 400. Thereby, drive mechanism 400 moves (descends) in the minus Z-axis direction. As a result, chip 405 is pressed against board 403 via bump 408. In the pressed state, the ultrasonic vibration is applied in the plane direction (direction parallel to the XY plane). As a result, the ultrasonic bonding step of board 403 and chip 405 is executed.
At this time, the output information of load cell 410 disposed in bonding head 404 and the information indicating the electric power waveform of ultrasonic vibrator 409 disposed in bonding head 404 are recorded in memory 414.
The force applied by bonding head 404 with respect to bump 408 strains vertical strain sensor 411 and plane strain sensor 412 embedded directly below board electrode 407 that is pressed against bump 408. Vertical strain sensor 411 and plane strain sensor 412 continuously detect the amount of strain generated by pressing in a time-series manner and input the strain amount information indicating the detected amount of strain to measurer 413. At this time, the strain amount information that is input to measurer 413 is recorded in memory 414 in association with the time when the amount of strain is detected.
Next, processor 415 estimates the change in shape of bump 408 and the state of the bonding interface surface between bump 408 and board electrode 407 based on the strain amount information recorded in memory 414. The estimation method for estimating the change in shape of bump 408 and the state of the bonding interface surface between bump 408 and board electrode 407 will be described later.
Next, processor 415 determines the quality of bonding between chip 405 and board 403 based on the estimated change in shape of bump 408 and the state of the bonding interface surface between bump 408 and board electrode 407. Thereafter,
processor 415 inputs the determined determination result to drive controller 416. The details of the above determination method will be described later. The determination result is utilized, for example, for sorting non-defective products or defective products of the produced products (bonded chip 405 and board 403). Device Manufacturing Apparatus 401 Next, with reference to FIG. 10, the operation of estimating the change in shape of bump 408 by vertical strain sensor 411 and the operation of estimating the state of the bonding interface surface of bump 408 by plane strain sensor 412 will be described. FIG. 10 is a view for explaining the ultrasonic bonding step in device manufacturing apparatus 401. In FIG. 10, the horizontal axis represents time t, and the broken line extending in the vertical direction is a line for clarifying the relationship between data at the same time. FIG. 10 shows, in order from the top, mounting load P, ultrasonic output US, vertical strain €z that is a first strain amount detected by vertical strain sensor 411, and plane strain ex that is a second strain amount detected by plane strain sensor
412. Vertical strain €z and plane strain £x are tensile strains when they are larger than zero and compression strains when they are smaller than zero. Further, mounting load P and ultrasonic output US are obtained by measuring the output value of load cell 410 and the electric power applied to ultrasonic vibrator 409 in the ultrasonic bonding step.
Estimation Method for Change in Shape of Bump 408 by Vertical Strain Sensor 411 Next, the operation of estimating the change in shape of bump 408 by vertical strain sensor 411 will be described. As will be described later, vertical strain ez changes depending on the area of bonding surface S. Specifically, first, bonding head 404 is lowered, and bump 408 and chip electrode 406 are in contact with each other at time t1.
After that, in the period from time t1 when bump 408 and board electrode 407 are in contact with each other to time t2 when the application of the ultrasonic vibration is started, vertical strain ez changes in the compression direction (minus direction) in proportion to mounting load P, and compression strain €z increases.
Bump 408 is crushed by the compressive force due to mounting load P. In this period, bonding surface S becomes large, and compression strain ez further increases. After time t2, mounting load P becomes a constant value.
Next, at time 12, the increase in mounting load P is stopped and the application of the ultrasonic vibration is started. As a result, in addition to the above- mentioned compressive force, a shearing force due to the application of the ultrasonic vibration also acts on bump 408. Therefore, the crushing deformation of bump 408 progresses greatly, and bonding surface S also rapidly increases. From time t2 until a predetermined time elapses, ultrasonic output US increases in proportion to the elapsed time, and is applied so as to become a constant output after the elapse of the predetermined time.
Next, at time t3, bonding surface S exceeds the region (hereinafter, referred to as “sensor area”) where strain can be detected by vertical strain sensor 411. That is, bonding surface S protrudes from the sensor area, or the area of bonding surface S exceeds the area of the sensor area. During the time from time t2 to time t3, bonding surface S fits within the sensor area of vertical strain sensor 411. During the above period, compression strain £z increases.
On the other hand, after time t3, bonding surface S does not fit within the sensor area of vertical strain sensor 411. That is, bonding surface S protrudes from the sensor area, or the area of bonding surface S is equal to or larger than the area of the sensor area. At this time, compression strain €z decreases. The reason for this is that when bonding surface S exceeds the sensor area of vertical strain sensor 411, the compressive force per unit area decreases as bonding surface S increases from the time when bonding surface S exceeds the sensor area.
When the size of vertical strain sensor 411 (that is, the area of the sensor area) is small and the area of bonding surface S is equal to or larger than the area of the sensor area before applying the ultrasonic vibration, compression strain £z may change from an increase to a decrease before time 12.
On the other hand, when the sensor area of vertical strain sensor 411 is larger than the finally obtained bonding surface S' and bonding surface S' does not exceed the sensor area, compression strain ez does not change from an increase to a decrease. Next, at time t4, the crush deformation of bump 408 is completed. That is, after the time t4, bonding surface S does not expand. Therefore, at time t4, the reduction of compression strain €z stops, and thereafter, vertical strain ez becomes constant value €z4. That is, in the case of Exemplary Embodiment 3, the period during which vertical strain €z decreases is between the time t3 and the time t4.
As described above, in the work of outputting the bonding condition in advance, the relationship between the area of bonding surface S' of the bonding sample that achieved the desired shear strength and the constant value €'z4 of the vertical strain when bonding surface S' is obtained, is obtained in advance.
Therefore, based on the above-mentioned obtained relationship and the constant value €z4 of vertical strain €z, processor 415 estimates the area of bonding surface S when vertical strain ez is the constant value £z4 as follows.
Specifically, when the relationship that bonding surface S' exceeds the sensor area of vertical strain sensor 411 is established (alternatively, "Area of bonding surface S' =z "Area of sensor area of vertical strain sensor 411"), first, processor 415 estimates the area of bonding surface S by equation (5) shown below.
"Area of bonding surface S" = "Area of bonding surface S' x (ez4 + €'z4)" … (5) When the relationship that bonding surface S' does not exceed the sensor area of vertical strain sensor 411 is established (alternatively, "Area of bonding surface S' < "Area of sensor area of vertical strain sensor 411"), processor 415 estimates the area of bonding surface S by equation (6) shown below.
"Area of bonding surface S" = "Area of bonding surface S' x (€'z4 + £24)" … (6) By the above method, the change in shape of bump 408 can be estimated by using vertical strain €z of vertical strain sensor 411.
Estimation of State of Bonding Interface Surface of Bump 408 by Plane Strain Sensor 412 Next, the estimation of the state of the bonding interface surface of bump 408 by plane strain sensor 412 will be described. The plane strain £x of plane strain sensor 412 changes depending on the degree of progress of bonding of bonding surface S between bump 408 and the bonding electrode on which bump 408 is pressed.
Specifically, at time t2 shown in FIG. 10, first, the ultrasonic vibration is applied. As a result, a frictional force is generated on bonding surface S. At this time, in the initial stage of the application of the ultrasonic vibration, bump 408 slides on the electrode to be bonded. Therefore, a static friction force and a dynamic friction force due to the ultrasonic vibration are repeatedly generated at the interface surface of bonding surface S. At this time, as shown in FIG. 10, amplitude Ax of plane strain ex changes in the same manner as the change of ultrasonic output US. While repeating sliding on the electrode to be bonded, a plastic deformation occurs at the interface surface between bump 408 and the electrode to be bonded. As aresult, the new surfaces are exposed at the interface surfaces of each other, and bonding surfaces S start to be bonded (initial stage bonding). That is, at time t'3, the initial stage bonding starts, and bump 408 starts to adhere to the electrode to be bonded. When the adhering starts, the interface surface between bonding head 404 and chip 405 held by bonding head 404 starts to slide. As a result, the ultrasonic vibration transmitted to bump 408 is attenuated. Amplitude Ax of plane strain ex changes to decrease after time t'3. Even after the initial stage bonding, the bonding of bonding surfaces S gradually increases. Therefore, amplitude Ax of plane strain €x, in which the ultrasonic vibration is induced at the bonding portion, decreases as the bonding portion increases. At time t'4 after a certain period of time elapsed since the ultrasonic vibration was applied, the bonding of bonding surface S is completed. Therefore, after the time t'4, the magnitude of the ultrasonic vibration transmitted to bump 408 becomes a constant value, whereby amplitude Ax of plane strain ex converges to a constant amplitude. This indicates that amplitude Ax of plane strain ex does not increase any more due to the completion of the bonding of bonding surfaces S. By using the above method, the degree of progress of bonding on bonding surface S between bump 408 and bonding electrode on which bump 408 is pressed can be estimated from the output waveform of plane strain sensor 412. That is, the state of the bump bonding interface surface can be estimated.
Determination flow of Bonding State Next, with reference to FIG. 11, the quality determination operation of the bonding state in the inspection method of device manufacturing apparatus 401 will be described.
FIG. 11 is a flowchart for explaining the inspection method of device manufacturing apparatus 401 according to Exemplary Embodiment 3 of the present disclosure.
As shown in FIG. 11, first, the ultrasonic bonding described above is performed (step S11).
Next, after the ultrasonic bonding is completed, processor 415 determines whether or not the output value of load cell 410 and the electric power applied to ultrasonic vibrator 409 are the same as the bonding conditions that are obtained by the mounting load and the ultrasonic output set in advance in device manufacturing apparatus 401 (step S12). At this time, when the output value of load cell 410 and the electric power applied to ultrasonic vibrator 409 are the same as the bonding conditions that are obtained by the mounting load and the ultrasonic output set in advance in device manufacturing apparatus 401 (YES in step S12), processor 415 estimates the area of bonding surface S (step S13). Specifically, in step S13, processor 415 estimates the area of bonding surface S finally obtained in the ultrasonic bonding step based on vertical strain €z of vertical strain sensor 411.
Thereafter, processor 415 compares the estimated area of bonding surface S (estimated value of bonding surface S) with the area of bonding surface S' of the bonding sample that achieved the desired shear strength in the work of outputting the bonding condition in advance. Processor 415 determines whether or not the estimated value of bonding surface S is within the variation range of the bonding area (step S14). For example, in the case of the estimated value Xmm? of bonding surface S, the variation range of the bonding area is a range from Xmm?- Ymm? (lower limit value) to Xmm? + Ymm? (upper limit value). Note that Ymm? is, for example, substantially 15% of X mm? When the estimated value of bonding surface S is within the variation range of the bonding area (YES in step S14), processor 415 finally checks whether or not the output waveform of plane strain sensor 412 converges to a constant amplitude (step S15). Specifically, in step S5, in the output waveform of plane strain sensor 412, processor 415 checks whether or not amplitude Ax of plane strain ex decreases with time during the ultrasonic bonding step and it converges to a constant amplitude finally.
At this time, when amplitude Ax of plane strain ex converges to a constant amplitude (YES in step S15), processor 415 determines that the bonding in the ultrasonic bonding step is good (step S16). Thereafter, processor 415 inputs the determined result to drive controller 416.
On the other hand, in step S12, when the output value of load cell 410 and the electric power value applied to ultrasonic vibrator 409 are not the same as the bonding condition set in advance (NO in step S12), an abnormality in the equipment is considered. In this case, processor 415 determines that the bonding in the ultrasonic bonding step is defective (step S17). Thereafter, processor 415 inputs the determined result to drive controller 416.
Further, in step S14, when the estimated value of the area of bonding surface S is out of the variation range of the bonding area (NO in step S14), there is a possibility that chip 405 is tilted and bonded due to contamination or the like, or that chip 405, board 403, or the like is cracked. The above-mentioned contamination is, for example, a contaminant of a fine conductor.
In this case, processor 415 determines that the bonding in the ultrasonic bonding step is defective (step S17). Thereafter, processor 415 inputs the determined result to drive controller 416.
In step S15, when amplitude Ax of plane strain ex is not converged (NO in step S15), there is a possibility that the bonding is not progressed due to a member defect, contamination, or the like. Further, when amplitude Ax of plane strain ex is increased after once converging, there is a possibility that the fatigue fracture occurs atthe bonding part.
In this case, processor 415 determines that the bonding in the ultrasonic bonding step is defective (step S17). Thereafter, processor 415 inputs the determined result to drive controller 416.
Drive controller 416 sorts the produced products (bonded chip 405 and board 403) into non-defective products or defective products based on the determination result of the bonding state and transports the produced products.
The order of processing from step S12 to step S15 does not have to be the order shown in FIG. 11. Therefore, for example, the bonding state can be determined by performing the processing in the order of step S12 and step S15 after the processing of step S14 while maintaining the processing order of step S13 and step S14. As described above, Exemplary Embodiment 3 is an inspection method of a device manufacturing apparatus including a chip that is ultrasonically bonded via a bump and a board that faces the chip.
The device manufacturing apparatus includes a first strain detector, which is disposed on the board and detects a first strain amount in a facing direction of the chip and the board, and a second strain detector, which is disposed on the board and detects a second strain amount in a direction of the ultrasonic vibration applied by the ultrasonic vibrator.
The inspection method of the device manufacturing apparatus includes a step of measuring the first strain amount and the second strain amount when the chip is ultrasonically bonded to the board on which the first strain detector and the second strain detector are disposed.
A step of estimating a change in shape of the bump based on the first strain amount, and a step of estimating a state of a bonding interface surface between an electrode and the bump, which are disposed on the chip or the board, based on the second strain amount, are further included.
A step of determining a quality of a bonding state between the chip and the board based on the estimated change in shape of the bump and the state of the bonding interface surface is further included.
Exemplary Embodiment 3 is a device manufacturing apparatus that includes a chip that is ultrasonically bonded via the bump and a board that faces the chip.
The device manufacturing apparatus includes a first strain detector, which is disposed on the board and detects a first strain amount in a facing direction of the chip and the board, and a second strain detector, which is disposed on the board and detects a second strain amount in a direction of the ultrasonic vibration applied by the ultrasonic vibrator.
The device manufacturing apparatus includes a measurer that measures the first strain amount and the second strain amount when the chip is ultrasonically bonded to the board on which the first strain detector and the second strain detector are disposed.
The device manufacturing apparatus includes a processor that estimates a change in shape of the bump based on the first strain amount, estimates a state of a bonding interface surface between the electrode and the bump, which are disposed on the chip or the board, based on the second strain amount, and determines a quality of a bonding state between the chip and the board based on the estimated change in shape of the bump and the state of the bonding interface surface.
According to the above configuration, when the ultrasonic bonding is performed, at the same time, an estimated value based on the first strain amount detected by the first strain detector (amount of change in bump shape) and an estimated value based on the second strain amount detected by the second strain detector (degree of progress of the bonding of bonding surface S between the bump and the electrode) can be estimated. That is, by using the estimated value, it is possible to determine the quality of the bonding state between the electrode and the bump, which are disposed on the chip or the board, in a non-destructive manner.
Therefore, the bonding quality can be determined in a non-destructive manner without depending on the statistical guarantee by increasing n in the breakdown test. This makes it possible to prevent the outflow of defective bonding products due to defective members or equipment abnormalities. As a result, the cost required for inspecting defective products can be significantly reduced. The cost associated with collecting defective products that have been washed away in the market can be significantly reduced, so the product brand can be maintained.
Exemplary Embodiment 4 Hereinafter, device manufacturing apparatus 401 according to Exemplary Embodiment 4 of the present disclosure will be described separately in terms of items.
FIG. 12 is a transmission view of board electrode 507 in the inspection method of device manufacturing apparatus 401 according to Exemplary Embodiment 4 of the present disclosure. In FIG. 12, the same reference numerals are used for the same components as those shown in FIG. 8, and the description thereof will be omitted.
As shown in FIG. 12, in device manufacturing apparatus 401 of Exemplary Embodiment 4, board electrode 507 is used instead of board electrode 407.
In device manufacturing apparatus 401 of Exemplary Embodiment 4, semiconductor 511 constituting the first strain detector made of n-type Si is used instead of vertical strain sensor 411. In device manufacturing apparatus 401 of Exemplary Embodiment 4, semiconductor 512 constituting the second strain detector made of p-type Si is used instead of plane strain sensor 412.
Semiconductor 511 and semiconductor 512 are embedded, for example, directly below board electrode 507, similarly to vertical strain sensor 411 and plane strain sensor 412. As a result, the same effect as when vertical strain sensor 411 and plane strain sensor 412 are embedded directly below board electrode 507 can be obtained. Explanation of Crystal Orientation of Semiconductor 511 and Semiconductor 512 Next, the crystal orientations of semiconductor 511 and semiconductor 512 will be described.
As described above, when the mechanical strain is applied to n-type Si and p- type Si, n-type Si and p-type Si have a piezoresistive effect in which each resistivity thereof changes.
That is, when the mechanical strain is applied to n-type Si and p-type Si, the resistance change ratio AR/RO of a certain crystal orientation x-axis is the sum of the values obtained by multiplying the strain applied in the xyz direction by the gauge ratio peculiar to each of the axes. RO is the initial resistance value of n-type Si or p- type Si when there is no strain. On the other hand, AR is the change in resistance value from the initial resistance value when strain is applied.
The gauge ratio changes depending on which crystal orientation is used for each axis of xyz. Therefore, semiconductor 511 is configured with n-type Si having a crystal orientation of [001] in the direction in which the mounting load is applied and a crystal orientation of [110] or [11(-)0] in vibration direction D. In this case, device manufacturing apparatus 401 of Exemplary Embodiment 4 preferably includes electric wiring 418 for measuring a resistance value having a crystal orientation of
[110] or [11(-)0]. The value in [] above is the Miller index for describing a crystal surface or a direction in a crystal lattice. With this configuration, semiconductor 511 has the maximum gauge ratio with respect to the strain in the direction in which the mounting load is applied. The main component of the measured change in resistance value AR depends on the compression strain (vertical strain £z).
Semiconductor 512 is configured with p-type Si having a crystal orientation of
[001] in the direction in which the mounting load is applied and a crystal orientation of
[110] or [11(-)0] in vibration direction D. In this case, device manufacturing apparatus 401 of Exemplary Embodiment 4 preferably includes electric wiring 418 for measuring a resistance value having a crystal orientation of [110] or [11(-)0]. With this configuration, semiconductor 512 has the maximum gauge ratio with respect to the plane strain in vibration direction D. The main component of the measured change in resistance value AR depends on plane strain ex in vibration direction D. In the ultrasonic mounting step, the change in resistance value of semiconductor 511 shows substantially the same tendency (including the same tendency) as the change in compression strain (vertical strain €z). Therefore, in the above equation (5) or equation (6), instead of constant value £z, of vertical strain €z, the resistance change ratio AR/RO when the resistance value becomes constant is used, and instead of constant value €'z4 of vertical strain €z, the amount of change in resistance value AR'/R'0 when bonding surface S' is obtained is used. As a result, processor 415 can estimate bonding surface S in the ultrasonic mounting step.
In the ultrasonic mounting step, the change in resistance value of semiconductor 512 shows substantially the same tendency (including the same tendency) as the change in plane strain ex in the vibration direction. Therefore, processor 415 can estimate the degree of progress of the bonding of bonding surface S based on the change in amplitude Ax of the resistance value of semiconductor
512.
That is, according to device manufacturing apparatus 401 and the inspection method of device manufacturing apparatus 401 of Exemplary Embodiment 4, similar to Exemplary Embodiment 3, it is possible to non-destructively inspect the quality of the bonding state in the ultrasonic mounting step.
According to device manufacturing apparatus 401 and the inspection method of device manufacturing apparatus 401 of Exemplary Embodiment 4, semiconductor 511 and semiconductor 512 are used as sensors. Thereby, for example, the number of electric wirings 418 can be reduced to less than half as compared with the case of using a general strain gauge shown in a non-patent document ("Strain gauge wiring method" https://www.kyowa-ei.com/jpn/technical/strain_gages/wiring.html: searched on April 6, 2020). Since a circuit for strain conversion is not required, measurer 413 can be simplified.

Claims (19)

~ CONCLUSIES~ CONCLUSIONS 1. Werkwijze voor fabricage van een inrichting, waarbij de inrichting een chip en een naar de chip toegekeerde printplaat omvat, waarbij de chip ultrasonisch via een bobbel wordt verbonden, waarbij de werkwijze het volgende omvat: een stap van het meten van een verandering in weerstandswaarde van elk van een veelheid aan sensoren wanneer de bobbel, die op de chip is voorzien, op de printplaat wordt geplaatst, waarbij de veelheid aan sensoren direct onder een elektrode waarop de bobbel is gedrukt, is ingebracht; een stap van het inschatten van een verbindingsvlak van de bobbel aan de elektrode in overeenstemming met de verandering in de weerstandswaarde; en een stap van het bepalen van een kwaliteit van een verbindingstoestand tussen de chip en de printplaat in overeenstemming met het ingeschatte verbindingsvlak.A method of manufacturing a device, the device comprising a chip and a printed circuit board facing the chip, the chip being ultrasonically bonded via a bump, the method comprising: a step of measuring a change in resistance value from each of a plurality of sensors when the bump provided on the chip is placed on the printed circuit board, the plurality of sensors being inserted directly below an electrode on which the bump is printed; a step of estimating a bonding area of the bump to the electrode in accordance with the change in the resistance value; and a step of determining a quality of a bonding state between the chip and the printed circuit board in accordance with the estimated bonding plane. 2. Werkwijze voor fabricage van een inrichting volgens conclusie 1 die verder het volgende omvat: een stap van het inschatten van een overlapgebied tussen het verbindingsviak van de bobbel aan de elektrode en elk van de sensoren in overeenstemming met de verandering in de weerstandswaarde; een stap van het uit het overlapgebied inschatten van een contour van het verbindingsvlak; een stap van het uit de contour van het verbindingsvlak verkrijgen van een centrum van het verbindingsvlak; en een stap van het berekenen van een mate van positionele afwijking tussen het centrum van het verbindingsvlak en een centrum van de elektrode.The method of manufacturing a device according to claim 1, further comprising: a step of estimating an overlap area between the interface area of the bump to the electrode and each of the sensors in accordance with the change in the resistance value; a step of estimating a contour of the bonding plane from the overlap area; a step of obtaining a center of the bonding plane from the contour of the bonding plane; and a step of calculating a degree of positional deviation between the center of the bonding face and a center of the electrode. 3. Werkwijze voor fabricage van een inrichting volgens conclusie 1, waarbij elk van de sensoren een sensor van het piëzoresistieve type in een rechthoekige vorm is.The method of manufacturing a device according to claim 1, wherein each of the sensors is a piezoresistive type sensor in a rectangular shape. 4. Werkwijze voor fabricage van een inrichting volgens conclusie 1, waarbij de sensoren een aantal sensoren van het piézoresistieve type omvatten die lineair uit elkaar worden opgesteld.The method of manufacturing a device according to claim 1, wherein the sensors comprise a plurality of piezoresistive type sensors arranged linearly apart from each other. 5. Werkwijze voor fabricage van een inrichting die een chip omvat die ultrasonisch via een bobbel wordt verbonden en een naar de chip toegekeerde printplaat, waarbij de werkwijze het volgende omvat:A method of fabricating a device comprising a chip that is ultrasonically bonded via a bump and a printed circuit board facing the chip, the method comprising: een stap van het meten van een eerste spanningswaarde en een tweede spanningswaarde wanneer de chip ultrasonisch wordt verbonden aan de printplaat, waarop een eerste spanningsdetector, die op de printplaat is aangebracht en de eerste spanningswaarde in een naar de chip en de printplaat gerichte richting detecteert, en een tweede spanningsdetector, die op de printplaat is aangebracht en de tweede spanningswaarde in een loodrecht op de naar de chip en de printplaat gerichte richting detecteert, worden aangebracht; een stap van het inschatten van een verandering in de vorm van de bobbel in overeenstemming met de eerste spanningswaarde; een stap van het inschatten van een toestand van een verbindingsgrensvlak tussen een op de chip of de printplaat aangebrachte elektrode en de bobbel in overeenstemming met de tweede spanningswaarde; en een stap van het bepalen van een kwaliteit van een verbindingstoestand tussen de chip en de printplaat in overeenstemming met de ingeschatte verandering in de vorm van de bobbel en de toestand van het verbindingsgrensvlak.a step of measuring a first voltage value and a second voltage value when the chip is ultrasonically bonded to the printed circuit board, whereupon a first voltage detector mounted on the printed circuit board detects the first voltage value in a direction towards the chip and the printed circuit board, and a second voltage detector provided on the printed circuit board and detecting the second voltage value in a direction perpendicular to the chip and printed circuit board direction; a step of estimating a change in the shape of the bump in accordance with the first voltage value; a step of estimating a state of a bonding interface between an electrode provided on the chip or the printed circuit board and the bump in accordance with the second voltage value; and a step of determining a quality of a connection state between the chip and the printed circuit board according to the estimated change in the shape of the bump and the state of the connection interface. 6. Werkwijze voor fabricage van een inrichting volgens conclusie 5, waarbij de eerste spanningsdetector en de tweede spanningsdetector in de printplaat worden ingebracht.The method of manufacturing a device according to claim 5, wherein the first voltage detector and the second voltage detector are inserted into the printed circuit board. 7. Werkwijze voor fabricage van een inrichting volgens conclusie 5, waarbij de eerste spanningsdetector en de tweede spanningsdetector worden aangebracht op een zijde van de elektrode die op de printplaat tegenover de zijde van de bobbel is aangebracht.A device manufacturing method according to claim 5, wherein the first voltage detector and the second voltage detector are provided on a side of the electrode provided on the printed circuit board opposite the side of the bump. 8. Werkwijze voor fabricage van een inrichting volgens conclusie 7, waarbij de eerste spanningsdetector en de tweede spanningsdetector direct onder de op de printplaat aangebrachte elektrode worden aangebracht.The method of manufacturing a device according to claim 7, wherein the first voltage detector and the second voltage detector are arranged directly below the electrode provided on the printed circuit board. 9. Werkwijze voor fabricage van een inrichting volgens conclusie 6, waarbij de eerste spanningsdetector wordt ingebracht in de buurt van een centrum van een verbindingsvlak tussen de elektrode en de bobbel voordat een ultrasone verbindingsstap wordt gestart of onmiddellijk nadat de ultrasone verbindingsstap is gestart.The method of manufacturing a device according to claim 6, wherein the first voltage detector is inserted near a center of a bonding pad between the electrode and the bump before an ultrasonic bonding step is initiated or immediately after the ultrasonic bonding step is initiated. 10. Werkwijze voor fabricage van een inrichting volgens conclusie 9, waarbij een gebied van de eerste spanningsdetector kleiner is dan een gebied van het verbindingsvlak tussen de elektrode en de bobbel dat verkregen is uit een resultaat van de ultrasone verbindingsstap.The method of manufacturing a device according to claim 9, wherein an area of the first voltage detector is smaller than an area of the bonding pad between the electrode and the bump obtained from a result of the ultrasonic bonding step. 11. Werkwijze voor fabricage van een inrichting volgens conclusie 5, waarbij de eerste spanningsdetector geconfigureerd is met een halfgeleider die gemaakt is van n-type Si en die de verandering in de vorm van de bobbel inschat, en de tweede spanningsdetector geconfigureerd is met een halfgeleider die gemaakt is van p-type Si en die de toestand van het verbindingsgrensvlak inschat.The device fabrication method of claim 5, wherein the first voltage detector is configured with a semiconductor made of n-type Si and which estimates the change in the shape of the bump, and the second voltage detector is configured with a semiconductor which is made of p-type Si and which estimates the state of the bonding interface. 12. Apparaat voor fabricage van een inrichting die het volgende omvat: een platform dat een printplaat vasthoudt die via een bobbel verbonden is aan een chip; een verbindingskop die uitrasone trillingen op de chip aanlegt terwijl de chip in de richting van de printplaat wordt gedrukt; een meetapparaat dat een verandering in weerstandswaarde van elk van een veelheid aan sensoren meet wanneer de op de chip aangebrachte bobbel op de printplaat is bevestigd, waarbij de veelheid van geplaatste sensoren direct onder een elektrode waarop de bobbel wordt gedrukt, is opgenomen; en een processor die een toestand van een verbindingsvlak van de bobbel op de elektrode inschat in overeenstemming met de verandering in de weerstandswaarde.A device for manufacturing a device comprising: a platform holding a printed circuit board bumped to a chip; a connector head that applies ultrasonic vibrations to the chip as the chip is pressed toward the printed circuit board; a measuring device that measures a change in resistance value of each of a plurality of sensors when the on-chip bump is mounted on the printed circuit board, the plurality of sensors placed directly below an electrode on which the bump is pressed; and a processor estimating a state of a bonding plane of the bump on the electrode in accordance with the change in the resistance value. 13. Apparaat voor fabricage van een inrichting volgens conclusie 12, waarbij de processor een overlapgebied tussen het verbindingsvlak van de bobbel aan de elektrode en elk van de sensoren in overeenstemming met de verandering in de weerstandswaarde inschat, uit het overlapgebied een contour van het verbindingsvlak inschat, uit de contour een centrum van het verbindingsvlak verkrijgt, en een mate van positionele afwijking tussen het centrum van het verbindingsvlak en een centrum van de elektrode berekent.The device manufacturing apparatus of claim 12, wherein the processor estimates an overlap area between the pad bonding surface of the bump to the electrode and each of the sensors in accordance with the change in the resistance value, estimates from the overlap region a contour of the bond pad , obtains a center of the bonding face from the contour, and calculates a degree of positional deviation between the center of the bonding face and a center of the electrode. 14. Apparaat voor fabricage van een inrichting volgens conclusie 12, waarbij elk van de sensoren een sensor van een piëzoresistieve type in een rechthoekige vorm is.The device manufacturing apparatus according to claim 12, wherein each of the sensors is a piezoresistive type sensor in a rectangular shape. 15. Apparaat voor fabricage van een inrichting volgens conclusie 12, waarbij de sensoren een aantal sensoren van het piëzoresistieve type omvatten die lineair uit elkaar zijn opgesteld.A device manufacturing apparatus according to claim 12, wherein the sensors comprise a plurality of piezoresistive type sensors arranged linearly apart from each other. 16. Apparaat voor fabricage van een inrichting, omvattende: een platform dat een printplaat vasthoudt die via een bobbel verbonden is aan een chip; een verbindingskop die ultrasone trillingen op de chip aanlegt terwijl de chip in de richting van de printplaat wordt gedrukt; een meetapparaat dat twee spanningen meet in overeenstemming met een uitvoer van een eerste spanningsdetector, die op de printplaat is aangebracht en een spanning detecteert in een eerste richting die een richting is waarin het platform en de verbindingskop naar elkaar gericht zijn, en een uitvoer van een tweede spanningsdetector, die in de printplaat is opgenomen en een spanning detecteert in een tweede richting die loodrecht op de eerste richting staat; en een processor die een kwaliteit van een bindingstoestand tussen de chip en de printplaat bepaalt in overeenstemming met het meetresultaat van het meetapparaat.A device manufacturing apparatus, comprising: a platform holding a printed circuit board bumped to a chip; a connector head that applies ultrasonic vibrations to the chip as the chip is pressed toward the printed circuit board; a measuring device which measures two voltages in accordance with an output of a first voltage detector mounted on the printed circuit board and detecting a voltage in a first direction which is a direction in which the platform and the connection head face each other, and an output of a second voltage detector, which is incorporated in the printed circuit board and detects a voltage in a second direction perpendicular to the first direction; and a processor that determines a quality of a bonding state between the chip and the printed circuit board in accordance with the measurement result of the measurement device. 17. Apparaat voor fabricage van een inrichting volgens conclusie 16, waarbij de eerste spanningsdetector en de tweede spanningsdetector in de printplaat zijn opgenomen.The device manufacturing apparatus of claim 16, wherein the first voltage detector and the second voltage detector are incorporated in the printed circuit board. 18. Bevestigingsstructuur, omvattende: een chip die een veelheid aan bobbels heeft; een printplaat die een veelheid aan printplaatelektroden heeft; en een veelheid aan sensoren die onder de printplaatelektrode zijn aangebracht, waarbij de veelheid aan sensoren radiaal zijn opgesteld ten opzichte van een centrum van de ene printplaatelektrode.An attachment structure comprising: a chip having a plurality of bumps; a printed circuit board having a plurality of printed circuit board electrodes; and a plurality of sensors disposed below the printed circuit board electrode, the plurality of sensors being radially arranged with respect to a center of the one printed circuit board electrode. 19. Bevestigingsstructuur, omvattende: een chip die een veelheid aan bobbels heeft; een printplaat die een veelheid aan printplaatelektroden heeft; en een veelheid aan sensoren die onder de printplaatelektrode zijn aangebracht, waarbij één van de veelheid aan sensoren een verticale spanningssensor is, die in het centrum van de printplaatelektrode is geplaatst, en één van de veelheid aan sensoren een vlakke spanningssensor is, die rond de verticale spanningssensor is geplaatst.A mounting structure, comprising: a chip having a plurality of bumps; a printed circuit board having a plurality of printed circuit board electrodes; and a plurality of sensors disposed below the printed circuit board electrode, one of the plurality of sensors being a vertical voltage sensor disposed in the center of the printed circuit board electrode, and one of the plurality of sensors being a planar voltage sensor arranged around the vertical voltage sensor is installed.
NL1044041A 2020-05-28 2021-05-26 Method for manufacturing device, device manufacturing apparatus, and mounting structure NL1044041B1 (en)

Applications Claiming Priority (2)

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