NL104185C - - Google Patents

Info

Publication number
NL104185C
NL104185C NL104185DA NL104185C NL 104185 C NL104185 C NL 104185C NL 104185D A NL104185D A NL 104185DA NL 104185 C NL104185 C NL 104185C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL104185C publication Critical patent/NL104185C/xx
Priority claimed from US678740A external-priority patent/US3030704A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
NL104185D 1957-08-16 NL104185C (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US678740A US3030704A (en) 1957-08-16 1957-08-16 Method of making non-rectifying contacts to silicon carbide
US159932A US3201666A (en) 1957-08-16 1961-12-18 Non-rectifying contacts to silicon carbide

Publications (1)

Publication Number Publication Date
NL104185C true NL104185C (en:Method)

Family

ID=26856457

Family Applications (2)

Application Number Title Priority Date Filing Date
NL104185D NL104185C (en:Method) 1957-08-16
NL230567D NL230567A (en:Method) 1957-08-16

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL230567D NL230567A (en:Method) 1957-08-16

Country Status (4)

Country Link
US (1) US3201666A (en:Method)
DE (1) DE1073109B (en:Method)
GB (1) GB837265A (en:Method)
NL (2) NL230567A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052587A (en:Method) * 1964-06-30
US3510733A (en) * 1966-05-13 1970-05-05 Gen Electric Semiconductive crystals of silicon carbide with improved chromium-containing electrical contacts
DE1765097C3 (de) * 1967-04-26 1973-07-12 Matsushita Electric Ind Co Ltd Spannungsabhaengiger Widerstand aus einer gesinterten Scheibe aus Zinkoxid
DE3204054A1 (de) * 1981-02-23 1982-09-09 Intel Corp., Santa Clara, Calif. Widerstand in integrierter schaltungstechnik und verfahren zu dessen herstellung
JPS58223678A (ja) * 1982-06-16 1983-12-26 株式会社日立製作所 金属化層を有するＳｉＣ焼結体とその製法
US4875083A (en) * 1987-10-26 1989-10-17 North Carolina State University Metal-insulator-semiconductor capacitor formed on silicon carbide
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
JP2509713B2 (ja) * 1989-10-18 1996-06-26 シャープ株式会社 炭化珪素半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1708571A (en) * 1925-02-21 1929-04-09 Carborundum Co Rectifying element
US2441603A (en) * 1943-07-28 1948-05-18 Bell Telephone Labor Inc Electrical translating materials and method of making them
US2792538A (en) * 1950-09-14 1957-05-14 Bell Telephone Labor Inc Semiconductor translating devices with embedded electrode
US2847335A (en) * 1953-09-15 1958-08-12 Siemens Ag Semiconductor devices and method of manufacturing them
NL198572A (en:Method) * 1954-07-27
BE544843A (en:Method) * 1955-02-25
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
US2796563A (en) * 1955-06-10 1957-06-18 Bell Telephone Labor Inc Semiconductive devices

Also Published As

Publication number Publication date
DE1073109B (de) 1960-01-14
US3201666A (en) 1965-08-17
NL230567A (en:Method)
GB837265A (en) 1960-06-09

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