NL103477C - - Google Patents
Info
- Publication number
- NL103477C NL103477C NL103477DA NL103477C NL 103477 C NL103477 C NL 103477C NL 103477D A NL103477D A NL 103477DA NL 103477 C NL103477 C NL 103477C
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL212548 | 1956-11-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL103477C true NL103477C (ru) |
Family
ID=19750816
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL212548D NL212548A (ru) | 1956-11-28 | ||
| NL103477D NL103477C (ru) | 1956-11-28 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL212548D NL212548A (ru) | 1956-11-28 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US2956863A (ru) |
| CH (1) | CH377786A (ru) |
| DE (1) | DE1051806B (ru) |
| FR (1) | FR1196958A (ru) |
| GB (1) | GB827466A (ru) |
| NL (2) | NL103477C (ru) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1077187B (de) * | 1958-11-13 | 1960-03-10 | Werk Fuer Bauelemente Der Nach | Verfahren zur Herstellung von Einkristallen aus halbleitenden Stoffen |
| US3097068A (en) * | 1959-05-29 | 1963-07-09 | Union Carbide Corp | Crystallization of pure silicon platelets |
| US3058915A (en) * | 1960-01-18 | 1962-10-16 | Westinghouse Electric Corp | Crystal growing process |
| DE1191789B (de) * | 1960-10-25 | 1965-04-29 | Siemens Ag | Verfahren zum Ziehen von vorzugsweise einkristallinen Halbleiterstaeben |
| US3212858A (en) * | 1963-01-28 | 1965-10-19 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
| US3258314A (en) * | 1963-04-12 | 1966-06-28 | Westinghouse Electric Corp | Method for interior zone melting of a crystalline rod |
| US3251655A (en) * | 1963-09-27 | 1966-05-17 | Westinghouse Electric Corp | Apparatus for producing crystalline semiconductor material |
| US3261671A (en) * | 1963-11-29 | 1966-07-19 | Philips Corp | Device for treating semi-conductor materials by melting |
| US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
| US3342559A (en) * | 1964-04-27 | 1967-09-19 | Westinghouse Electric Corp | Apparatus for producing dendrites |
| DE1238450B (de) * | 1964-06-04 | 1967-04-13 | Consortium Elektrochem Ind | Verfahren zum Herstellen von spannungsfreien und rissefreien Staeben aus hochreinem Bor aus der Schmelze |
| US4116642A (en) * | 1976-12-15 | 1978-09-26 | Western Electric Company, Inc. | Method and apparatus for avoiding undesirable deposits in crystal growing operations |
| DE2928089C3 (de) * | 1979-07-12 | 1982-03-04 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Verbundtiegel für halbleitertechnologische Zwecke und Verfahren zur Herstellung |
| DE3005492C2 (de) * | 1980-02-14 | 1983-10-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski |
| US4478676A (en) * | 1982-09-07 | 1984-10-23 | Litton Systems, Inc. | Method for decreasing radial temperature gradients of crystal growth melts utilizing radiant energy absorptive materials and crystal growth chambers comprising such materials |
| SU1592414A1 (ru) * | 1986-11-26 | 1990-09-15 | Vni Pk T I Elektrotermicheskog | Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия |
| US4971650A (en) * | 1989-09-22 | 1990-11-20 | Westinghouse Electric Corp. | Method of inhibiting dislocation generation in silicon dendritic webs |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2291083A (en) * | 1942-07-28 | Furnace construction | ||
| US2753280A (en) * | 1952-05-01 | 1956-07-03 | Rca Corp | Method and apparatus for growing crystalline material |
| US2686212A (en) * | 1953-08-03 | 1954-08-10 | Gen Electric | Electric heating apparatus |
| US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
| US2839436A (en) * | 1955-04-19 | 1958-06-17 | Texas Instruments Inc | Method and apparatus for growing semiconductor crystals |
-
0
- NL NL212548D patent/NL212548A/xx unknown
- NL NL103477D patent/NL103477C/xx active
-
1957
- 1957-10-09 US US689197A patent/US2956863A/en not_active Expired - Lifetime
- 1957-11-23 DE DEN14376A patent/DE1051806B/de active Pending
- 1957-11-25 GB GB36647/57A patent/GB827466A/en not_active Expired
- 1957-11-25 CH CH5303657A patent/CH377786A/de unknown
- 1957-11-26 FR FR1196958D patent/FR1196958A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1051806B (de) | 1959-03-05 |
| CH377786A (de) | 1964-05-31 |
| GB827466A (en) | 1960-02-03 |
| FR1196958A (fr) | 1959-11-27 |
| US2956863A (en) | 1960-10-18 |
| NL212548A (ru) |