NL1019030C2 - Werkwijze en inrichting voor de vervaardiging van halfgeleider- en metaal schijven of -folies en toepassing van op zodanige wijze vervaardigde folies of schijven. - Google Patents

Werkwijze en inrichting voor de vervaardiging van halfgeleider- en metaal schijven of -folies en toepassing van op zodanige wijze vervaardigde folies of schijven. Download PDF

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Publication number
NL1019030C2
NL1019030C2 NL1019030A NL1019030A NL1019030C2 NL 1019030 C2 NL1019030 C2 NL 1019030C2 NL 1019030 A NL1019030 A NL 1019030A NL 1019030 A NL1019030 A NL 1019030A NL 1019030 C2 NL1019030 C2 NL 1019030C2
Authority
NL
Netherlands
Prior art keywords
substrate
melt
casting frame
zone
temperature
Prior art date
Application number
NL1019030A
Other languages
English (en)
Dutch (nl)
Other versions
NL1019030A1 (nl
Inventor
Hans-Ulrich Hoefs
Ralf Kuhn
Hans-Ulrich Lambert
Ulrich Kowitz
Ingo Steinbach
Original Assignee
Bayer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer Ag filed Critical Bayer Ag
Publication of NL1019030A1 publication Critical patent/NL1019030A1/xx
Application granted granted Critical
Publication of NL1019030C2 publication Critical patent/NL1019030C2/nl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
NL1019030A 2000-09-27 2001-09-25 Werkwijze en inrichting voor de vervaardiging van halfgeleider- en metaal schijven of -folies en toepassing van op zodanige wijze vervaardigde folies of schijven. NL1019030C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10047929 2000-09-27
DE2000147929 DE10047929B4 (de) 2000-09-27 2000-09-27 Verfahren und Vorrichtung zur Herstellung von Halbleiter- und Metallscheiben oder -folien

Publications (2)

Publication Number Publication Date
NL1019030A1 NL1019030A1 (nl) 2002-03-28
NL1019030C2 true NL1019030C2 (nl) 2006-03-27

Family

ID=7657882

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1019030A NL1019030C2 (nl) 2000-09-27 2001-09-25 Werkwijze en inrichting voor de vervaardiging van halfgeleider- en metaal schijven of -folies en toepassing van op zodanige wijze vervaardigde folies of schijven.

Country Status (2)

Country Link
DE (1) DE10047929B4 (de)
NL (1) NL1019030C2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1026043C2 (nl) 2004-04-26 2005-10-27 Stichting Energie Werkwijze en inrichting voor het fabriceren van metalen folies.
NL2004209C2 (en) 2010-02-08 2011-08-09 Rgs Dev B V Apparatus and method for the production of semiconductor material foils.
US20110305891A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent productivity and surface quality using continuous casting

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165449A1 (de) * 1984-05-23 1985-12-27 Bayer Ag Verfahren zur Herstellung von Halbleiterfolien
DE4102484A1 (de) * 1991-01-29 1992-07-30 Bayer Ag Verfahren zur herstellung von metallscheiben sowie die verwendung von siliciumscheiben

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165449A1 (de) * 1984-05-23 1985-12-27 Bayer Ag Verfahren zur Herstellung von Halbleiterfolien
DE4102484A1 (de) * 1991-01-29 1992-07-30 Bayer Ag Verfahren zur herstellung von metallscheiben sowie die verwendung von siliciumscheiben
EP0497148A1 (de) * 1991-01-29 1992-08-05 Bayer Ag Verfahren zur Herstellung von Metallscheiben sowie die Verwendung von Siliciumscheiben

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KOCH W ET AL: "PREPARATION, CHARACTERISATION AND CELL PROCESSING OF BAYER RGS SILICON FOILS (RIBBON GROWTH ON SUBSTRATE)", 2ND WORLD CONFERENCE ON PHOTOVOLTAIC SOLAR ENERGY CONVERSION. / 15TH EUROPEAN PV SOLAR ENERGY CONFERENCE. / 27TH US IEEE PHOTOVOLTAICSSPECIALISTS CONFERENCE. / 10TH ASIA/PACIFIC PV SCIENCE AND ENGINEERINGCONFERENCE. VIENNA, AUSTRIA, JULY 6 - 10, 1998, vol. VOL. 2, 6 July 1998 (1998-07-06), pages 1254 - 1259, XP001137936, ISBN: 92-828-5419-1 *
STEINBACH I ET AL: "Microstructural analysis of the crystallization of silicon ribbons produced by the RGS process", CONFERENCE RECORD OF THE 26TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 29 September 1997 (1997-09-29), pages 91 - 93, XP010267735, ISBN: 0-7803-3767-0 *

Also Published As

Publication number Publication date
NL1019030A1 (nl) 2002-03-28
DE10047929A1 (de) 2002-04-11
DE10047929B4 (de) 2013-04-11

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