NL1005624A1 - Polysilicon CMP process for high density DRAM cell structures. - Google Patents
Polysilicon CMP process for high density DRAM cell structures.Info
- Publication number
- NL1005624A1 NL1005624A1 NL1005624A NL1005624A NL1005624A1 NL 1005624 A1 NL1005624 A1 NL 1005624A1 NL 1005624 A NL1005624 A NL 1005624A NL 1005624 A NL1005624 A NL 1005624A NL 1005624 A1 NL1005624 A1 NL 1005624A1
- Authority
- NL
- Netherlands
- Prior art keywords
- high density
- cmp process
- cell structures
- dram cell
- density dram
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1005624A NL1005624C2 (en) | 1997-03-25 | 1997-03-25 | Poly:silicon CMP processing high density DRAM memory cell structure - includes depositing 1st and 2nd insulating, 1st and 2nd poly:silicon, 3rd insulating, removing redundant 2nd poly:silicon and 3rd insulating, forming dielectric & deposit 3rd poly:silicon |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1005624A NL1005624C2 (en) | 1997-03-25 | 1997-03-25 | Poly:silicon CMP processing high density DRAM memory cell structure - includes depositing 1st and 2nd insulating, 1st and 2nd poly:silicon, 3rd insulating, removing redundant 2nd poly:silicon and 3rd insulating, forming dielectric & deposit 3rd poly:silicon |
| NL1005624 | 1997-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL1005624A1 true NL1005624A1 (en) | 1998-09-28 |
| NL1005624C2 NL1005624C2 (en) | 2000-02-08 |
Family
ID=19764659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1005624A NL1005624C2 (en) | 1997-03-25 | 1997-03-25 | Poly:silicon CMP processing high density DRAM memory cell structure - includes depositing 1st and 2nd insulating, 1st and 2nd poly:silicon, 3rd insulating, removing redundant 2nd poly:silicon and 3rd insulating, forming dielectric & deposit 3rd poly:silicon |
Country Status (1)
| Country | Link |
|---|---|
| NL (1) | NL1005624C2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2875588B2 (en) * | 1990-05-22 | 1999-03-31 | 沖電気工業株式会社 | Method for manufacturing semiconductor device |
| KR960011652B1 (en) * | 1993-04-14 | 1996-08-24 | 현대전자산업 주식회사 | Stack capacitor and the method |
| JP3085831B2 (en) * | 1993-09-17 | 2000-09-11 | 沖電気工業株式会社 | Method for manufacturing semiconductor device |
| US5604148A (en) * | 1996-03-08 | 1997-02-18 | United Microelectronics Corporation | Process of fabricating stacked capacitor configuration for dynamic random access memory |
-
1997
- 1997-03-25 NL NL1005624A patent/NL1005624C2/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL1005624C2 (en) | 2000-02-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AD1A | A request for search or an international type search has been filed | ||
| RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 19990923 |
|
| PD2B | A search report has been drawn up | ||
| VD1 | Lapsed due to non-payment of the annual fee |
Effective date: 20021001 |