NL1004516A1 - Silicon-on-isolator (SOI) DRAM cell structure and method. - Google Patents
Silicon-on-isolator (SOI) DRAM cell structure and method.Info
- Publication number
- NL1004516A1 NL1004516A1 NL1004516A NL1004516A NL1004516A1 NL 1004516 A1 NL1004516 A1 NL 1004516A1 NL 1004516 A NL1004516 A NL 1004516A NL 1004516 A NL1004516 A NL 1004516A NL 1004516 A1 NL1004516 A1 NL 1004516A1
- Authority
- NL
- Netherlands
- Prior art keywords
- isolator
- soi
- silicon
- cell structure
- dram cell
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/740,148 US5811283A (en) | 1996-08-13 | 1996-10-22 | Silicon on insulator (SOI) dram cell structure and process |
GB9622406A GB2318681B (en) | 1996-10-22 | 1996-10-28 | Silicon on insulator (soi) dram cell structure and process |
DE19644972A DE19644972C2 (en) | 1996-10-22 | 1996-10-29 | Semiconductor memory and method for producing a semiconductor memory |
FR9613737A FR2755793B1 (en) | 1996-10-22 | 1996-11-12 | SILICON-ON-INSULATION (SOI) DRAM CELL STRUCTURE AND MANUFACTURING METHOD |
NL1004516A NL1004516C2 (en) | 1996-10-22 | 1996-11-13 | Silicon-on-isolator (SOI) memory and method for its manufacture. |
JP9011963A JPH10209396A (en) | 1996-10-22 | 1997-01-07 | Silicon-on-insulator(soi) dram cell structure and its manufacture |
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74014896 | 1996-10-22 | ||
US08/740,148 US5811283A (en) | 1996-08-13 | 1996-10-22 | Silicon on insulator (SOI) dram cell structure and process |
GB9622406A GB2318681B (en) | 1996-10-22 | 1996-10-28 | Silicon on insulator (soi) dram cell structure and process |
GB9622406 | 1996-10-28 | ||
DE19644972A DE19644972C2 (en) | 1996-10-22 | 1996-10-29 | Semiconductor memory and method for producing a semiconductor memory |
DE19644972 | 1996-10-29 | ||
FR9613737 | 1996-11-12 | ||
FR9613737A FR2755793B1 (en) | 1996-10-22 | 1996-11-12 | SILICON-ON-INSULATION (SOI) DRAM CELL STRUCTURE AND MANUFACTURING METHOD |
NL1004516 | 1996-11-13 | ||
NL1004516A NL1004516C2 (en) | 1996-10-22 | 1996-11-13 | Silicon-on-isolator (SOI) memory and method for its manufacture. |
JP9011963A JPH10209396A (en) | 1996-10-22 | 1997-01-07 | Silicon-on-insulator(soi) dram cell structure and its manufacture |
JP1196397 | 1997-01-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1004516A1 true NL1004516A1 (en) | 1998-05-14 |
NL1004516C2 NL1004516C2 (en) | 1998-10-20 |
Family
ID=27545055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1004516A NL1004516C2 (en) | 1996-08-13 | 1996-11-13 | Silicon-on-isolator (SOI) memory and method for its manufacture. |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH10209396A (en) |
DE (1) | DE19644972C2 (en) |
FR (1) | FR2755793B1 (en) |
GB (1) | GB2318681B (en) |
NL (1) | NL1004516C2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0996159A1 (en) * | 1998-10-12 | 2000-04-26 | STMicroelectronics S.r.l. | Integrated circuit structure comprising capacitor and corresponding manufacturing process |
US6350653B1 (en) * | 2000-10-12 | 2002-02-26 | International Business Machines Corporation | Embedded DRAM on silicon-on-insulator substrate |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4820652A (en) * | 1985-12-11 | 1989-04-11 | Sony Corporation | Manufacturing process and structure of semiconductor memory devices |
JPS63158869A (en) * | 1986-12-23 | 1988-07-01 | Oki Electric Ind Co Ltd | Semiconductor memory |
KR930001418B1 (en) * | 1990-08-07 | 1993-02-27 | 삼성전자 주식회사 | Method of fabricating semiconductor device |
JPH05110020A (en) * | 1991-09-11 | 1993-04-30 | Mitsubishi Electric Corp | Semiconductor device |
JPH0575054A (en) * | 1991-09-12 | 1993-03-26 | Sanyo Electric Co Ltd | Semiconductor storage device |
JPH0590535A (en) * | 1991-09-26 | 1993-04-09 | Sanyo Electric Co Ltd | Manufacture of semiconductor storage device |
JP3272517B2 (en) * | 1993-12-01 | 2002-04-08 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
US5442584A (en) * | 1993-09-14 | 1995-08-15 | Goldstar Electron Co., Ltd. | Semiconductor memory device and method for fabricating the same dynamic random access memory device construction |
-
1996
- 1996-10-28 GB GB9622406A patent/GB2318681B/en not_active Expired - Fee Related
- 1996-10-29 DE DE19644972A patent/DE19644972C2/en not_active Expired - Fee Related
- 1996-11-12 FR FR9613737A patent/FR2755793B1/en not_active Expired - Fee Related
- 1996-11-13 NL NL1004516A patent/NL1004516C2/en not_active IP Right Cessation
-
1997
- 1997-01-07 JP JP9011963A patent/JPH10209396A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
NL1004516C2 (en) | 1998-10-20 |
JPH10209396A (en) | 1998-08-07 |
FR2755793A1 (en) | 1998-05-15 |
GB2318681B (en) | 2001-08-29 |
FR2755793B1 (en) | 1999-04-30 |
GB2318681A (en) | 1998-04-29 |
DE19644972C2 (en) | 2003-07-24 |
DE19644972A1 (en) | 1998-05-07 |
GB9622406D0 (en) | 1997-01-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 19980617 |
|
PD2B | A search report has been drawn up | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20110601 |