NL1004516A1 - Silicon-on-isolator (SOI) DRAM cell structure and method. - Google Patents

Silicon-on-isolator (SOI) DRAM cell structure and method.

Info

Publication number
NL1004516A1
NL1004516A1 NL1004516A NL1004516A NL1004516A1 NL 1004516 A1 NL1004516 A1 NL 1004516A1 NL 1004516 A NL1004516 A NL 1004516A NL 1004516 A NL1004516 A NL 1004516A NL 1004516 A1 NL1004516 A1 NL 1004516A1
Authority
NL
Netherlands
Prior art keywords
isolator
soi
silicon
cell structure
dram cell
Prior art date
Application number
NL1004516A
Other languages
Dutch (nl)
Other versions
NL1004516C2 (en
Inventor
Shih-Wei Sun
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US08/740,148 priority Critical patent/US5811283A/en
Priority claimed from US08/740,148 external-priority patent/US5811283A/en
Priority to GB9622406A priority patent/GB2318681B/en
Priority to DE19644972A priority patent/DE19644972C2/en
Priority to FR9613737A priority patent/FR2755793B1/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to NL1004516A priority patent/NL1004516C2/en
Priority to JP9011963A priority patent/JPH10209396A/en
Publication of NL1004516A1 publication Critical patent/NL1004516A1/en
Application granted granted Critical
Publication of NL1004516C2 publication Critical patent/NL1004516C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
NL1004516A 1996-08-13 1996-11-13 Silicon-on-isolator (SOI) memory and method for its manufacture. NL1004516C2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US08/740,148 US5811283A (en) 1996-08-13 1996-10-22 Silicon on insulator (SOI) dram cell structure and process
GB9622406A GB2318681B (en) 1996-10-22 1996-10-28 Silicon on insulator (soi) dram cell structure and process
DE19644972A DE19644972C2 (en) 1996-10-22 1996-10-29 Semiconductor memory and method for producing a semiconductor memory
FR9613737A FR2755793B1 (en) 1996-10-22 1996-11-12 SILICON-ON-INSULATION (SOI) DRAM CELL STRUCTURE AND MANUFACTURING METHOD
NL1004516A NL1004516C2 (en) 1996-10-22 1996-11-13 Silicon-on-isolator (SOI) memory and method for its manufacture.
JP9011963A JPH10209396A (en) 1996-10-22 1997-01-07 Silicon-on-insulator(soi) dram cell structure and its manufacture

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US74014896 1996-10-22
US08/740,148 US5811283A (en) 1996-08-13 1996-10-22 Silicon on insulator (SOI) dram cell structure and process
GB9622406A GB2318681B (en) 1996-10-22 1996-10-28 Silicon on insulator (soi) dram cell structure and process
GB9622406 1996-10-28
DE19644972A DE19644972C2 (en) 1996-10-22 1996-10-29 Semiconductor memory and method for producing a semiconductor memory
DE19644972 1996-10-29
FR9613737 1996-11-12
FR9613737A FR2755793B1 (en) 1996-10-22 1996-11-12 SILICON-ON-INSULATION (SOI) DRAM CELL STRUCTURE AND MANUFACTURING METHOD
NL1004516 1996-11-13
NL1004516A NL1004516C2 (en) 1996-10-22 1996-11-13 Silicon-on-isolator (SOI) memory and method for its manufacture.
JP9011963A JPH10209396A (en) 1996-10-22 1997-01-07 Silicon-on-insulator(soi) dram cell structure and its manufacture
JP1196397 1997-01-07

Publications (2)

Publication Number Publication Date
NL1004516A1 true NL1004516A1 (en) 1998-05-14
NL1004516C2 NL1004516C2 (en) 1998-10-20

Family

ID=27545055

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1004516A NL1004516C2 (en) 1996-08-13 1996-11-13 Silicon-on-isolator (SOI) memory and method for its manufacture.

Country Status (5)

Country Link
JP (1) JPH10209396A (en)
DE (1) DE19644972C2 (en)
FR (1) FR2755793B1 (en)
GB (1) GB2318681B (en)
NL (1) NL1004516C2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0996159A1 (en) * 1998-10-12 2000-04-26 STMicroelectronics S.r.l. Integrated circuit structure comprising capacitor and corresponding manufacturing process
US6350653B1 (en) * 2000-10-12 2002-02-26 International Business Machines Corporation Embedded DRAM on silicon-on-insulator substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820652A (en) * 1985-12-11 1989-04-11 Sony Corporation Manufacturing process and structure of semiconductor memory devices
JPS63158869A (en) * 1986-12-23 1988-07-01 Oki Electric Ind Co Ltd Semiconductor memory
KR930001418B1 (en) * 1990-08-07 1993-02-27 삼성전자 주식회사 Method of fabricating semiconductor device
JPH05110020A (en) * 1991-09-11 1993-04-30 Mitsubishi Electric Corp Semiconductor device
JPH0575054A (en) * 1991-09-12 1993-03-26 Sanyo Electric Co Ltd Semiconductor storage device
JPH0590535A (en) * 1991-09-26 1993-04-09 Sanyo Electric Co Ltd Manufacture of semiconductor storage device
JP3272517B2 (en) * 1993-12-01 2002-04-08 三菱電機株式会社 Method for manufacturing semiconductor device
US5442584A (en) * 1993-09-14 1995-08-15 Goldstar Electron Co., Ltd. Semiconductor memory device and method for fabricating the same dynamic random access memory device construction

Also Published As

Publication number Publication date
NL1004516C2 (en) 1998-10-20
JPH10209396A (en) 1998-08-07
FR2755793A1 (en) 1998-05-15
GB2318681B (en) 2001-08-29
FR2755793B1 (en) 1999-04-30
GB2318681A (en) 1998-04-29
DE19644972C2 (en) 2003-07-24
DE19644972A1 (en) 1998-05-07
GB9622406D0 (en) 1997-01-08

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 19980617

PD2B A search report has been drawn up
V1 Lapsed because of non-payment of the annual fee

Effective date: 20110601