KR970004018A - SRAM Cells - Google Patents
SRAM Cells Download PDFInfo
- Publication number
- KR970004018A KR970004018A KR1019950018281A KR19950018281A KR970004018A KR 970004018 A KR970004018 A KR 970004018A KR 1019950018281 A KR1019950018281 A KR 1019950018281A KR 19950018281 A KR19950018281 A KR 19950018281A KR 970004018 A KR970004018 A KR 970004018A
- Authority
- KR
- South Korea
- Prior art keywords
- sram cells
- sram
- cells
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
- G02B6/4439—Auxiliary devices
- G02B6/4471—Terminating devices ; Cable clamps
- G02B6/44775—Cable seals e.g. feed-through
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
- Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950018281A KR100324598B1 (en) | 1995-06-29 | 1995-06-29 | Static random access memory cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950018281A KR100324598B1 (en) | 1995-06-29 | 1995-06-29 | Static random access memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970004018A true KR970004018A (en) | 1997-01-29 |
KR100324598B1 KR100324598B1 (en) | 2002-06-26 |
Family
ID=37478088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950018281A KR100324598B1 (en) | 1995-06-29 | 1995-06-29 | Static random access memory cell |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100324598B1 (en) |
-
1995
- 1995-06-29 KR KR1019950018281A patent/KR100324598B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100324598B1 (en) | 2002-06-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20100126 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |