KR970004016A - SRAM Cells - Google Patents

SRAM Cells Download PDF

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Publication number
KR970004016A
KR970004016A KR1019950017598A KR19950017598A KR970004016A KR 970004016 A KR970004016 A KR 970004016A KR 1019950017598 A KR1019950017598 A KR 1019950017598A KR 19950017598 A KR19950017598 A KR 19950017598A KR 970004016 A KR970004016 A KR 970004016A
Authority
KR
South Korea
Prior art keywords
sram cells
sram
cells
Prior art date
Application number
KR1019950017598A
Other languages
Korean (ko)
Other versions
KR0165406B1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950017598A priority Critical patent/KR0165406B1/en
Publication of KR970004016A publication Critical patent/KR970004016A/en
Application granted granted Critical
Publication of KR0165406B1 publication Critical patent/KR0165406B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
KR1019950017598A 1995-06-26 1995-06-26 Sram cell KR0165406B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950017598A KR0165406B1 (en) 1995-06-26 1995-06-26 Sram cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017598A KR0165406B1 (en) 1995-06-26 1995-06-26 Sram cell

Publications (2)

Publication Number Publication Date
KR970004016A true KR970004016A (en) 1997-01-29
KR0165406B1 KR0165406B1 (en) 1998-12-15

Family

ID=19418404

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950017598A KR0165406B1 (en) 1995-06-26 1995-06-26 Sram cell

Country Status (1)

Country Link
KR (1) KR0165406B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100437143B1 (en) * 2000-03-10 2004-06-25 인피네온 테크놀로지스 아게 Integrated dram memory cell and dram memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980077674A (en) * 1997-04-22 1998-11-16 김영환 SRAM Semiconductor Device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100437143B1 (en) * 2000-03-10 2004-06-25 인피네온 테크놀로지스 아게 Integrated dram memory cell and dram memory

Also Published As

Publication number Publication date
KR0165406B1 (en) 1998-12-15

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060830

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee