MY8500782A - Amorphous silicon solar cells - Google Patents
Amorphous silicon solar cellsInfo
- Publication number
- MY8500782A MY8500782A MY782/85A MY8500782A MY8500782A MY 8500782 A MY8500782 A MY 8500782A MY 782/85 A MY782/85 A MY 782/85A MY 8500782 A MY8500782 A MY 8500782A MY 8500782 A MY8500782 A MY 8500782A
- Authority
- MY
- Malaysia
- Prior art keywords
- amorphous silicon
- solar cells
- silicon solar
- cells
- amorphous
- Prior art date
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3146079A | 1979-04-19 | 1979-04-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY8500782A true MY8500782A (en) | 1985-12-31 |
Family
ID=21859579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MY782/85A MY8500782A (en) | 1979-04-19 | 1985-12-30 | Amorphous silicon solar cells |
Country Status (6)
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2464564A1 (fr) * | 1979-08-28 | 1981-03-06 | Rca Corp | Batterie solaire au silicium amorphe |
ZA849070B (en) * | 1983-12-07 | 1985-07-31 | Energy Conversion Devices Inc | Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures |
EP0153043A3 (en) * | 1984-02-15 | 1986-09-24 | Energy Conversion Devices, Inc. | Ohmic contact layer |
EP0168132A3 (en) * | 1984-05-14 | 1987-04-29 | Energy Conversion Devices, Inc. | Static field-induced semiconductor structures |
JPS6132481A (ja) * | 1984-07-24 | 1986-02-15 | Sharp Corp | 非晶質半導体素子 |
JPS6177375A (ja) * | 1984-09-21 | 1986-04-19 | Sharp Corp | カラ−センサ |
JPS61104678A (ja) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | アモルフアス太陽電池 |
JPS63100858U (US06582424-20030624-M00016.png) * | 1986-12-19 | 1988-06-30 | ||
US20080135083A1 (en) * | 2006-12-08 | 2008-06-12 | Higher Way Electronic Co., Ltd. | Cascade solar cell with amorphous silicon-based solar cell |
KR101918737B1 (ko) * | 2012-03-19 | 2019-02-08 | 엘지전자 주식회사 | 태양 전지 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1129220A (fr) * | 1955-07-25 | 1957-01-17 | Piles photovoltaïques à rendement élevé | |
IL48996A (en) * | 1975-02-27 | 1977-08-31 | Varian Associates | Photovoltaic cells |
DE2514013A1 (de) * | 1975-03-29 | 1976-10-07 | Licentia Gmbh | Strahlungsempfindliches halbleiterbauelement |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
JPS531483A (en) * | 1976-06-28 | 1978-01-09 | Futaba Denshi Kogyo Kk | Pn junction solar battery and method of producing same |
US4094704A (en) * | 1977-05-11 | 1978-06-13 | Milnes Arthur G | Dual electrically insulated solar cells |
US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
JPS55111180A (en) * | 1979-02-19 | 1980-08-27 | Sharp Corp | Thin-film solar battery of high output voltage |
-
1979
- 1979-11-22 FR FR7928779A patent/FR2454705B1/fr not_active Expired
- 1979-11-22 IT IT27500/79A patent/IT1194594B/it active
- 1979-12-12 GB GB7942918A patent/GB2047463B/en not_active Expired
- 1979-12-13 JP JP16264979A patent/JPS55141765A/ja active Granted
- 1979-12-13 DE DE19792950085 patent/DE2950085A1/de active Granted
-
1985
- 1985-12-30 MY MY782/85A patent/MY8500782A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
JPS55141765A (en) | 1980-11-05 |
JPS6333308B2 (US06582424-20030624-M00016.png) | 1988-07-05 |
FR2454705A1 (fr) | 1980-11-14 |
GB2047463A (en) | 1980-11-26 |
FR2454705B1 (fr) | 1986-06-20 |
GB2047463B (en) | 1983-06-15 |
DE2950085A1 (de) | 1980-10-30 |
IT1194594B (it) | 1988-09-22 |
DE2950085C2 (US06582424-20030624-M00016.png) | 1992-01-23 |
IT7927500A0 (it) | 1979-11-22 |
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