IT1194594B - Celle solari di silicio amorfo con giunzioni in tandem - Google Patents

Celle solari di silicio amorfo con giunzioni in tandem

Info

Publication number
IT1194594B
IT1194594B IT27500/79A IT2750079A IT1194594B IT 1194594 B IT1194594 B IT 1194594B IT 27500/79 A IT27500/79 A IT 27500/79A IT 2750079 A IT2750079 A IT 2750079A IT 1194594 B IT1194594 B IT 1194594B
Authority
IT
Italy
Prior art keywords
amorphous silicon
solar cells
tandem junctions
junctions
tandem
Prior art date
Application number
IT27500/79A
Other languages
English (en)
Other versions
IT7927500A0 (it
Inventor
Joseph John Hanak
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7927500A0 publication Critical patent/IT7927500A0/it
Application granted granted Critical
Publication of IT1194594B publication Critical patent/IT1194594B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
IT27500/79A 1979-04-19 1979-11-22 Celle solari di silicio amorfo con giunzioni in tandem IT1194594B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3146079A 1979-04-19 1979-04-19

Publications (2)

Publication Number Publication Date
IT7927500A0 IT7927500A0 (it) 1979-11-22
IT1194594B true IT1194594B (it) 1988-09-22

Family

ID=21859579

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27500/79A IT1194594B (it) 1979-04-19 1979-11-22 Celle solari di silicio amorfo con giunzioni in tandem

Country Status (6)

Country Link
JP (1) JPS55141765A (it)
DE (1) DE2950085A1 (it)
FR (1) FR2454705B1 (it)
GB (1) GB2047463B (it)
IT (1) IT1194594B (it)
MY (1) MY8500782A (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2464564A1 (fr) * 1979-08-28 1981-03-06 Rca Corp Batterie solaire au silicium amorphe
ZA849070B (en) * 1983-12-07 1985-07-31 Energy Conversion Devices Inc Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures
EP0153043A3 (en) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Ohmic contact layer
EP0168132A3 (en) * 1984-05-14 1987-04-29 Energy Conversion Devices, Inc. Static field-induced semiconductor structures
JPS6132481A (ja) * 1984-07-24 1986-02-15 Sharp Corp 非晶質半導体素子
JPS6177375A (ja) * 1984-09-21 1986-04-19 Sharp Corp カラ−センサ
JPS61104678A (ja) * 1984-10-29 1986-05-22 Mitsubishi Electric Corp アモルフアス太陽電池
JPS63100858U (it) * 1986-12-19 1988-06-30
US20080135083A1 (en) * 2006-12-08 2008-06-12 Higher Way Electronic Co., Ltd. Cascade solar cell with amorphous silicon-based solar cell
KR101918737B1 (ko) * 2012-03-19 2019-02-08 엘지전자 주식회사 태양 전지

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1129220A (fr) * 1955-07-25 1957-01-17 Piles photovoltaïques à rendement élevé
IL48996A (en) * 1975-02-27 1977-08-31 Varian Associates Photovoltaic cells
DE2514013A1 (de) * 1975-03-29 1976-10-07 Licentia Gmbh Strahlungsempfindliches halbleiterbauelement
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS531483A (en) * 1976-06-28 1978-01-09 Futaba Denshi Kogyo Kk Pn junction solar battery and method of producing same
US4094704A (en) * 1977-05-11 1978-06-13 Milnes Arthur G Dual electrically insulated solar cells
US4167015A (en) * 1978-04-24 1979-09-04 Rca Corporation Cermet layer for amorphous silicon solar cells
JPS55111180A (en) * 1979-02-19 1980-08-27 Sharp Corp Thin-film solar battery of high output voltage

Also Published As

Publication number Publication date
DE2950085C2 (it) 1992-01-23
FR2454705A1 (fr) 1980-11-14
GB2047463A (en) 1980-11-26
JPS6333308B2 (it) 1988-07-05
FR2454705B1 (fr) 1986-06-20
GB2047463B (en) 1983-06-15
JPS55141765A (en) 1980-11-05
MY8500782A (en) 1985-12-31
DE2950085A1 (de) 1980-10-30
IT7927500A0 (it) 1979-11-22

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