MY7300382A - Semiconductor switching device - Google Patents

Semiconductor switching device

Info

Publication number
MY7300382A
MY7300382A MY382/73A MY7300382A MY7300382A MY 7300382 A MY7300382 A MY 7300382A MY 382/73 A MY382/73 A MY 382/73A MY 7300382 A MY7300382 A MY 7300382A MY 7300382 A MY7300382 A MY 7300382A
Authority
MY
Malaysia
Prior art keywords
switching device
semiconductor switching
semiconductor
switching
Prior art date
Application number
MY382/73A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of MY7300382A publication Critical patent/MY7300382A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/83—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Rectifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
MY382/73A 1967-08-21 1973-12-30 Semiconductor switching device MY7300382A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA845885T
US66195467A 1967-08-21 1967-08-21

Publications (1)

Publication Number Publication Date
MY7300382A true MY7300382A (en) 1973-12-31

Family

ID=74124947

Family Applications (1)

Application Number Title Priority Date Filing Date
MY382/73A MY7300382A (en) 1967-08-21 1973-12-30 Semiconductor switching device

Country Status (7)

Country Link
JP (1) JPS4743875B1 (ja)
CA (1) CA845885A (ja)
DE (1) DE1764791B2 (ja)
FR (1) FR1578448A (ja)
GB (1) GB1234294A (ja)
MY (1) MY7300382A (ja)
NL (1) NL162251C (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
JPS5019437B1 (ja) * 1970-06-08 1975-07-07
JPS4918279A (ja) * 1972-06-08 1974-02-18
DE2214187C3 (de) * 1972-03-23 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5541029B2 (ja) * 1972-10-30 1980-10-21
JPS4974486A (ja) * 1972-11-17 1974-07-18
JPS5314917B1 (ja) * 1975-06-13 1978-05-20
JPS5297684A (en) * 1976-02-12 1977-08-16 Mitsubishi Electric Corp Semiconductor element
IT1072135B (it) * 1976-12-07 1985-04-10 Indesit Dispositivo semiconduttore per la deflessione orizzontale
JPS5427887Y2 (ja) * 1978-03-29 1979-09-08
JPS5547066Y2 (ja) * 1978-05-16 1980-11-05
CN109698234B (zh) * 2017-10-23 2021-05-11 株洲中车时代半导体有限公司 晶闸管及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099591A (en) * 1958-12-15 1963-07-30 Shockley William Semiconductive device

Also Published As

Publication number Publication date
DE1764791B2 (de) 1973-05-10
GB1234294A (ja) 1971-06-03
JPS4743875B1 (ja) 1972-11-06
CA845885A (en) 1970-06-30
FR1578448A (ja) 1969-08-14
NL6811845A (ja) 1969-02-25
NL162251C (nl) 1980-04-15
DE1764791A1 (de) 1972-04-06

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