MY163982A - Mask sheet for manufacturing semiconductor device and method of manufacturing semiconductor device using the same - Google Patents

Mask sheet for manufacturing semiconductor device and method of manufacturing semiconductor device using the same

Info

Publication number
MY163982A
MY163982A MYPI2013001098A MYPI2013001098A MY163982A MY 163982 A MY163982 A MY 163982A MY PI2013001098 A MYPI2013001098 A MY PI2013001098A MY PI2013001098 A MYPI2013001098 A MY PI2013001098A MY 163982 A MY163982 A MY 163982A
Authority
MY
Malaysia
Prior art keywords
mask sheet
semiconductor device
adhesive
manufacturing semiconductor
property
Prior art date
Application number
MYPI2013001098A
Inventor
Yamai Atsufumi
Horike Takayuki
Mori Takahiro
Ichikawa Takamasa
Yamada Hiromi
Machii Satoru
Original Assignee
Tomoegawa Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tomoegawa Co Ltd filed Critical Tomoegawa Co Ltd
Publication of MY163982A publication Critical patent/MY163982A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

AS A MASK SHEET, A MASK SHEET IS DESIRED IN WHICH TAPING WITH RESPECT TO A L/F CAN BE PERFORMED AT A LOWER TEMPERATURE THAN A THERMOPLASTIC MASK SHEET, THERMAL DEGRADATION, WHICH MAY CAUSE AN ADHESIVE REMAINS DURING PEELING OFF THE MASK SHEET, IS DIFFICULT TO GENERATED EVEN WHEN EXPOSED TO A HIGH TEMPERATURE, A WARP IS REDUCED WITH THE FLATNESS, A W/B PROPERTY IS EXCELLENT WITH THE HARDNESS AT A HIGH TEMPERATURE BEING HARDER THAN THAT OF AN ADHESIVE MASK SHEET OF THE RELATED ART, LESS MOLDED RESIN LEAKAGE OCCURS DURING SEALING THAN THAT OF THE ADHESIVE MASK SHEET, AND AN EASILY-PEELING-OFF PROPERTY IS OBTAINED AFTER A PLASMA CLEANING PROCESS, AND A SMALL AMOUNT OF ADHESIVE REMAINS. THE PRESENT INVENTION PROVIDES A MASK SHEET FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A THERMOSET ADHESIVE LAYER WHICH IS LAMINATED ON ONE SURFACE OF A BASE LAYER, AND IS PEELABLY ADHERED TO A METAL PLATE, IN WHICH THE THERMOSET ADHESIVE LAYER CONTAINS A POLYIMIDE RESIN CONTAINING A SILOXANE SKELETON WITH A GLASS TRANSITION TEMPERATURE OF 45°C TO 170°C, AN EPOXY RESIN, A CURING AGENT, AND A FLUORINE ADDITIVE.
MYPI2013001098A 2012-04-02 2013-03-28 Mask sheet for manufacturing semiconductor device and method of manufacturing semiconductor device using the same MY163982A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012084096A JP5824402B2 (en) 2012-04-02 2012-04-02 Mask sheet for manufacturing semiconductor device and method for manufacturing semiconductor device using the same

Publications (1)

Publication Number Publication Date
MY163982A true MY163982A (en) 2017-11-15

Family

ID=49363269

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2013001098A MY163982A (en) 2012-04-02 2013-03-28 Mask sheet for manufacturing semiconductor device and method of manufacturing semiconductor device using the same

Country Status (5)

Country Link
JP (1) JP5824402B2 (en)
KR (1) KR101475139B1 (en)
CN (1) CN103360973A (en)
MY (1) MY163982A (en)
TW (1) TWI500733B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6247629B2 (en) * 2014-12-11 2017-12-13 Ckd株式会社 Coil sheet manufacturing method and coil manufacturing method
KR101930197B1 (en) * 2015-09-01 2018-12-17 린텍 가부시키가이샤 Adhesive sheet
JP6840466B2 (en) 2016-03-08 2021-03-10 株式会社アムコー・テクノロジー・ジャパン Semiconductor package and manufacturing method of semiconductor package
KR102032767B1 (en) 2017-05-12 2019-10-17 (주)인랩 QFN semiconductor package, method of fabricating the same and mask sheet for manufacturing the same
JP7045172B2 (en) * 2017-11-28 2022-03-31 藤森工業株式会社 Coverlay film and electronic devices using it
TWI661022B (en) * 2018-05-30 2019-06-01 律勝科技股份有限公司 Adhesive composition and adhesive sheet and cured product thereof
WO2020045900A1 (en) * 2018-08-29 2020-03-05 주식회사 티지오테크 Method for making mask, mask, and frame-integrated mask
KR102313245B1 (en) 2021-01-04 2021-10-14 (주)인랩 Masking tape for semiconductor packaging
CN115491136A (en) * 2022-09-21 2022-12-20 江门市优彼思半导体材料有限公司 Mask belt and preparation method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW294702B (en) * 1994-03-08 1997-01-01 Sumitomo Bakelite Co
JPH0827430A (en) * 1994-07-18 1996-01-30 Sumitomo Bakelite Co Ltd Film adhesive improved in physical property at high temperature and its production
JP2002129126A (en) * 2000-10-23 2002-05-09 Tomoegawa Paper Co Ltd Adhesive composition and adhesive sheet for semiconductor device
JP4002736B2 (en) * 2001-03-21 2007-11-07 株式会社巴川製紙所 Mask sheet for assembling semiconductor device and assembling method of semiconductor device
JP4251807B2 (en) * 2001-12-17 2009-04-08 株式会社巴川製紙所 Adhesive sheet for semiconductor device manufacturing
JP4319892B2 (en) * 2003-11-07 2009-08-26 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device
JP4863690B2 (en) * 2005-10-31 2012-01-25 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device, semiconductor device and manufacturing method thereof
JP4654062B2 (en) * 2005-03-30 2011-03-16 株式会社巴川製紙所 Adhesive sheet for manufacturing semiconductor device and method for manufacturing semiconductor device
TWI460249B (en) * 2006-02-16 2014-11-11 Shinetsu Chemical Co Adhesive composition, adhesive film, and method of producing semiconductor device

Also Published As

Publication number Publication date
JP5824402B2 (en) 2015-11-25
TW201408749A (en) 2014-03-01
KR20130113377A (en) 2013-10-15
JP2013213137A (en) 2013-10-17
TWI500733B (en) 2015-09-21
KR101475139B1 (en) 2014-12-23
CN103360973A (en) 2013-10-23

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