Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/924,021external-prioritypatent/US6224785B1/en
Application filed by Advanced Tech MaterialsfiledCriticalAdvanced Tech Materials
Publication of MY118370ApublicationCriticalpatent/MY118370A/en
A SEMICONDUCTOR WAFER FORMULATION FOR USE IN POST PLASMA ASHING SEMICONDUCTOR FABRICATION COMPRISING THE FOLLOWING COMPONENTS IN THE PERCENTAGE BY WEIGHT RANGES SHOWN: AMMONIUM FLUORIDE AND/OR A DERIVATIVE THEREOF;1-21 AN ORGANIC AMINE OR MIXTURE OF TWO AMINES;20-55 WATER; 23-50 A METAL CHELATING AGENT OR MIXTURE OF CHELATING AGENTS. 0-21
MYPI98000581997-01-091998-01-06Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
MY118370A
(en)
Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures