MY113050A - Dual element magnetoresistive sensor with antiparalel magnetization directions for magnetic state stability - Google Patents

Dual element magnetoresistive sensor with antiparalel magnetization directions for magnetic state stability

Info

Publication number
MY113050A
MY113050A MYPI95000868A MYPI19950868A MY113050A MY 113050 A MY113050 A MY 113050A MY PI95000868 A MYPI95000868 A MY PI95000868A MY PI19950868 A MYPI19950868 A MY PI19950868A MY 113050 A MY113050 A MY 113050A
Authority
MY
Malaysia
Prior art keywords
antiparalel
elements
magnetoresistive sensor
magnetization directions
dual element
Prior art date
Application number
MYPI95000868A
Inventor
Pinarbasi Mustafa
Singh Gill Hardayal
Original Assignee
Hitachi Global Storage Tech Netherlands B V
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Global Storage Tech Netherlands B V filed Critical Hitachi Global Storage Tech Netherlands B V
Publication of MY113050A publication Critical patent/MY113050A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3945—Heads comprising more than one sensitive element
    • G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
    • G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
    • G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/399—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures with intrinsic biasing, e.g. provided by equipotential strips

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)

Abstract

A DUAL ELEMENT MAGNETORESISTIVE (MR) SENSOR (10) IS DISCLOSED COMPRISING TWO MR ELEMENTS (MR1, MR2) SEPARATED BY A HIGH RESISTIVITY CONDUCTIVE SPACER MATERIAL (16). A LAYER OF HARD BIAS MATERIAL (26), WHICH ABUTS ONE OF THE MR ELEMENTS AT EACH OF ITS TRACK EDGES, HAS A MAGNETIZATION TIMES THICKNESS VALUE SUBSTANTIALLY MATCHED TO THAT OF THE ONE MR ELEMENT TO BIAS IT IN ONE LONGITUDINAL DIRECTION. AN EXCHANGE BIAS LAYER (20) BIASES THE OTHER MR ELEMENT BY EXCHANGE COUPLING IN AN OPPOSITE LONGITUDINAL DIRECTION TO ACHIEVE MAGNETIC STABILIZATION BETWEEN THE MR ELEMENTS. THE EXCHANGE BIAS LAYER ABUTS THE OTHER MR ELEMENT AT EACH OF ITS TRACK EDGES AND HAS A MAGNETIZATION TIMES THICKNESS VALUE SUBSTANTIALLY MATCHED TO THAT OF THE OTHER MRELEMENT. ALTERNATIVELY, THE EXCHANGE BIAS LAYER EXTENDS FROM ONE TRACK EDGE TO AN OPPOSITE TRACK EDGE IN CONTINUOUS UNDERLYING OR OVERLYING CONTACT WITH THE OTHER MR ELEMENT.
MYPI95000868A 1994-04-21 1995-04-05 Dual element magnetoresistive sensor with antiparalel magnetization directions for magnetic state stability MY113050A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23067494A 1994-04-21 1994-04-21

Publications (1)

Publication Number Publication Date
MY113050A true MY113050A (en) 2001-11-30

Family

ID=22866142

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI95000868A MY113050A (en) 1994-04-21 1995-04-05 Dual element magnetoresistive sensor with antiparalel magnetization directions for magnetic state stability

Country Status (8)

Country Link
EP (1) EP0681286A3 (en)
JP (1) JPH07296339A (en)
KR (1) KR0152965B1 (en)
CN (1) CN1064163C (en)
BR (1) BR9501495A (en)
CA (1) CA2142377A1 (en)
MY (1) MY113050A (en)
TW (1) TW272283B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2755199B2 (en) * 1995-02-27 1998-05-20 日本電気株式会社 Permanent magnet bias type magnetoresistive head
JP2765515B2 (en) * 1995-05-15 1998-06-18 日本電気株式会社 Magnetoresistive head and method of manufacturing the same
JP3575683B2 (en) * 2000-10-05 2004-10-13 松下電器産業株式会社 Multi-element type magnetoresistive element
KR100361977B1 (en) * 2000-05-13 2002-11-23 (주)바이오세라 Asepsis non-washing rise and the manufacturing method
JP3729498B2 (en) * 2003-02-26 2005-12-21 株式会社東芝 Magnetoresistive head and magnetic recording / reproducing apparatus
CN112305469B (en) * 2019-07-29 2022-04-29 甘肃省科学院传感技术研究所 Giant magnetoresistance sensor with integrated annealing structure
CN113390956B (en) * 2021-06-18 2024-02-20 西安建筑科技大学 Double-magnetic-sensor probe and magnetic leakage detection defect quantitative evaluation method based on same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103315A (en) * 1977-06-24 1978-07-25 International Business Machines Corporation Antiferromagnetic-ferromagnetic exchange bias films
US4413296A (en) * 1979-07-16 1983-11-01 Eastman Kodak Company Thin film magnetoresistive head
US4903158A (en) * 1988-07-28 1990-02-20 Eastman Kodak Company MR head with complementary easy axis permanent magnet
US5018037A (en) * 1989-10-10 1991-05-21 Krounbi Mohamad T Magnetoresistive read transducer having hard magnetic bias
JPH05250642A (en) * 1992-01-10 1993-09-28 Toshiba Corp Magnetoresist effect sensor
US5329413A (en) * 1992-01-10 1994-07-12 Kabushiki Kaisha Toshiba Magnetoresistance sensor magnetically coupled with high-coercive force film at two end regions
US5966272A (en) * 1993-06-21 1999-10-12 Read-Rite Corporation Magnetoresistive read head having an exchange layer
US5406433A (en) * 1993-12-01 1995-04-11 Eastman Kodak Company Dual magnetoresistive head for reproducing very narrow track width short wavelength data
BE1019365A5 (en) * 2010-06-07 2012-06-05 Ibens Joke Maria Jozef PACKING.

Also Published As

Publication number Publication date
BR9501495A (en) 1995-11-14
CN1113587A (en) 1995-12-20
JPH07296339A (en) 1995-11-10
EP0681286A3 (en) 1996-03-06
KR0152965B1 (en) 1998-10-15
TW272283B (en) 1996-03-11
CA2142377A1 (en) 1995-10-22
EP0681286A2 (en) 1995-11-08
KR950030054A (en) 1995-11-24
CN1064163C (en) 2001-04-04

Similar Documents

Publication Publication Date Title
MY116029A (en) Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias
US5739987A (en) Magnetoresistive read transducers with multiple longitudinal stabilization layers
TW277132B (en)
MY114962A (en) Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide
MY136486A (en) Antiferromagnetic exchange coupling in magnetoresistive spin valve sensors
EP1061592A3 (en) Magneto-resistance effect element, and its use as memory element
EP0875901A3 (en) Magnetic thin-film memory element utilizing GMR effect, and magnetic thin-film memory
EP0911810A3 (en) Magnetic tunnel junction devices
ES8801964A1 (en) Magnetoresistive read transducer assembly.
TW330285B (en) Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor
KR950704820A (en) Magneto-resistance device, and magnetic head employing such a device
CA2060561A1 (en) Magnetoresistive sensor based on oscillations in the magnetoresistance
KR970018763A (en) Magnetoresistive element and sensor
EP1248264A3 (en) Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element
MY122945A (en) Gmr magnetic transducer with nano-oxide exchange coupled free layers
JPS54157610A (en) Magnetic head
JPS6435717A (en) Magnetoresistance effect type reader/converter
MY113050A (en) Dual element magnetoresistive sensor with antiparalel magnetization directions for magnetic state stability
JPS5613513A (en) Magnetic head and its manufacture
US5737156A (en) Barberpole MR sensor having interleaved permanent magnet and magnetoresistive segments
EP0965987A3 (en) Magneto-optical recording medium
US5748413A (en) Magnetoresistive reas transducer with exchange biasing of magnetoresistive sensor and soft adjacent layer
JPS56114121A (en) Magnetic head
EP0738896A3 (en) Exchange coupled barber pole magnetoresistive sensor
EP0381541A3 (en) Superconductive magnetoresistive device