MXPA97010067A - Transparent conductor composition, transparent conductor coat formed of the same and manufacturing method for myself - Google Patents
Transparent conductor composition, transparent conductor coat formed of the same and manufacturing method for myselfInfo
- Publication number
- MXPA97010067A MXPA97010067A MXPA/A/1997/010067A MX9710067A MXPA97010067A MX PA97010067 A MXPA97010067 A MX PA97010067A MX 9710067 A MX9710067 A MX 9710067A MX PA97010067 A MXPA97010067 A MX PA97010067A
- Authority
- MX
- Mexico
- Prior art keywords
- transparent conductive
- composition
- conductive layer
- silicon alkoxide
- transparent
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004020 conductor Substances 0.000 title description 3
- -1 silicon alkoxide Chemical class 0.000 claims abstract description 57
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 239000011230 binding agent Substances 0.000 claims abstract description 20
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 229910000077 silane Inorganic materials 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 16
- 229960002796 polystyrene sulfonate Drugs 0.000 claims description 16
- 239000011970 polystyrene sulfonate Substances 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 14
- LFQCEHFDDXELDD-UHFFFAOYSA-N Tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 14
- 239000004593 Epoxy Substances 0.000 claims description 13
- 125000004432 carbon atoms Chemical group C* 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 7
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N Methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 5
- TZRXHJWUDPFEEY-UHFFFAOYSA-N Pentaerythritol Chemical compound [O-][N+](=O)OCC(CO[N+]([O-])=O)(CO[N+]([O-])=O)CO[N+]([O-])=O TZRXHJWUDPFEEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000026 Pentaerythritol tetranitrate Substances 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 4
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 4
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 4
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 3
- 229920001197 polyacetylene Polymers 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- 229920000414 polyfuran Polymers 0.000 claims description 3
- 229920000128 polypyrrole Polymers 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 108
- 239000000243 solution Substances 0.000 description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N iso-propanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 10
- SECXISVLQFMRJM-UHFFFAOYSA-N n-methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- LBCZOTMMGHGTPH-UHFFFAOYSA-N 2-[2-[4-(2,4,4-trimethylpentan-2-yl)phenoxy]ethoxy]ethanol Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(OCCOCCO)C=C1 LBCZOTMMGHGTPH-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N Tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N n-butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- ZHERPVLBGALJPP-UHFFFAOYSA-N trimethoxymethylsilicon Chemical compound COC([Si])(OC)OC ZHERPVLBGALJPP-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N TiO Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N [O-2].[Ti+4].[In+3] Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- GXLJMEVJOMVESY-UHFFFAOYSA-N [SiH4].[V] Chemical compound [SiH4].[V] GXLJMEVJOMVESY-UHFFFAOYSA-N 0.000 description 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910001929 titanium oxide Inorganic materials 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
Abstract
A composition is provided for a transparent conductive composition, a transparent conductive layer using the composition and a method of manufacturing therefor. The composition contains a conductive polymer, a binder and solvents, wherein a silicon alkoxide oligomer is used as the binder. A transparent conductive layer that is excellent in the characteristic transmittance, hardness and strength can be obtained from the composition
Description
TRANSPARENT DRIVER COMPOSITION, TRANSPARENT CONDUCTOR LAYER FORMED FROM THE
SAME AND MANUFACTURING METHOD FOR THEMSELVES
FIELD OF THE INVENTION
The present invention relates to a transparent conductive composition, a transparent conductive layer formed of the composition, and a method of manufacturing therefor, and more particularly, to a transparent conductive composition used to form a protective layer of electromagnetic waves. and an antistatic layer for a display device, a transparent conductive layer formed of the composition and a manufacturing method therefor.
BACKGROUND OF THE INVENTION
A transparent conductive layer is a thin layer formed on the surface of the layer of insulation material that has a high light transmittance. The transparent conductive layer includes a thin film of metal
REF: 26498 made of platinum (Pt) or gold (Au), and a thin metal oxide film made of tin oxide of indium, tin oxide, titanium oxide or antimony oxide. The transparent conductive layer is used as an antistatic layer and an electromagnetic wave protection layer for home applications, and a transparent energy application electrode for a flat panel device. The transparent conductive layer is manufactured by an electronic deposition method, a deposition method, a deposition method or an ion beam method. However, according to the above methods, expensive equipment such as a vacuum device is required and a sintering process at 400 ° C or more must be performed. In this way, it is difficult to apply these methods to a display device that is not suitable for the sintering process at 200 ° C or more or a low cost display device, more particularly, to a wave protection layer electromagnetic or an anti-static layer for a cathode ray tube (CRT). Recently, as it has become evident that electromagnetic waves emitted from a monitor are harmful to the human body, the restriction on electromagnetic waves has been consolidated. In this way, it is a prior consideration to obtain a transparent conductive layer which is excellent in the protection of electromagnetic waves and antistatic effects. The characteristics of the transparent conductive layer capable of competing with the restriction of electromagnetic waves by the Swedish Confederation of Professional Employees (TCO) are as follows. As an anti-static layer, the resistance of the transparent conductive layer must be less than 109O / D. Also, as a protective layer of electromagnetic waves, the transparent conductive layer must have a resistance of 103O / D or less, a hardness of 5H or more and a transparency of 95% or more. In order to obtain a transparent conductive layer having the above characteristics, a method has been suggested in which a conductive polymer is used, instead of a metal oxide such as indium titanium oxide, which is used in the method conventional. When the conductive polymer is used as a material for the formation of the transparent conductive layer, a transparent low cost conductive layer can be obtained through a low temperature sintering process. However, since the conductive polymer absorbs light of a visible range and the physical property such as hardness is not satisfactory, it is difficult to obtain a transparent conductive layer having adequate transparency, strength and hardness for the anti-static layer and the Electromagnetic wave protection layer for a display device. To solve the above problems, a method has been suggested in which a binder substance such as silicon alkoxide is added to a conductive polymer. According to this method, the hardness of the transparent conductive layer is increased to 5H by the addition of a binder substance. However, the resistance of 106O / D or more and transparency is poor. In this way, it is difficult to use the transparent conductive layer as a protective layer of electromagnetic waves and an anti-static layer for a display device.
BRIEF DESCRIPTION OF THE INVENTION
It is an object of the present invention to provide a transparent conductive composition capable of forming a transparent conductive layer having excellent strength, hardness and transparency. It is another object of the present invention to provide a transparent conductive layer formed of the composition. It is still another object of the present invention to provide a method for manufacturing the transparent conductive layer. To achieve the first objective, a transparent conductive composition is provided which includes a conductive polymer, a binder and solvents, wherein the binder substance is silicon alkoxide oligomer expressed by formula 1:
OR
RO- (SiO) nR OR wherein R is hydrogen or alkyl of 1 to 20 carbon atoms and n is an integer from 2 to 10. Preferably, the weight ratio of the conductive polymer to the hydrolyzed product of an alkoxide oligomer of silicon is between 100: 0.02 and 100: 99.98. The transparent conductive layer may further include a binding resin or a silane compound. At present, it is preferable that the weight ratio of the conductive polymer to the bonding resin be between 100: 0.4 and 100: 95.3. and, the weight ratio of the conductive polymer to the silane compound is between 100: 0.2 and 100: 99.97. To achieve the second objective, a transparent conductive layer comprising a conductive layer formed of a conductive polymer and a hydrolyzed product of a silicon alkoxide oligomer expressed by the formula 1 is provided:
OR
I
RO- (SiO) n-R 1
OR where R is hydrogen or alkyl of 1 to 20 carbon atoms and n is an integer from 2 to 10. Also, a transparent conductive layer is provided which further comprises an overcoating layer made of a product of a silicon alkoxide oligomer expressed by formula 1 formed on the conductive layer.
OR
RO- (SiO) n-R
OR
where R is hydrogen or alkyl of 1 to 20 carbon atoms and n is an integer from 2 to 10. To achieve the third objective, a method is provided for the manufacture of a transparent conductive layer, comprising the steps of: (a) ) coating a composition comprising a conductive polymer, a silicon alkoxide oligomer of the formula 1 and solvents on a substrate and drying the resultant; and (b) heating the resultant to form a conductive layer:
OR
RO- (SiO) n-R
OR
where R is hydrogen or alkyl of 1 to 20 carbon atoms and n is an integer from 2 to 10. An additional one is also provided which comprises: (c) coating a composition comprising a silicon alkoxide oligomer expressed by formula 1 and a binder substance on the conductive layer, and drying and heating the resultant to form a conductive layer. OR
RO- (S? 'O) n-R
OR where R is hydrogen or alkyl of 1 to 20 carbon atoms and n is an integer from 2 to 10.
BRIEF DESCRIPTION OF THE DRAWING
The above objects and advantages of the present invention will become more apparent when describing in detail a preferred embodiment thereof with reference to the accompanying drawings in which:
FIGURE 1 is a diagram showing the structure of a transparent, individual conductive layer according to the present invention; Y
FIGURE 2 is a diagram showing the structure of a transparent conductive layer, in multiple layers according to the present invention.
DETAILED DESCRIPTION OF THE INVENTION
In accordance with the present invention, a composition including a conductive polymer and a binder such as a silicon alkoxide oligomer is used to form a transparent conductive layer, so that the structure of the transparent conductive layer becomes densified. In this way, the hardness and transparency of the transparent layer is improved, and the strength thereof is minimized. In the transparent conductive composition of the present invention, preferably, the conductive polymer content is 0.05 ~ 0.5% by weight and the content of binder is 0.001-4.0% by weight, based on the total weight of the composition. When the contents of the conductive polymer and the binder substance are within the above range, the hardness, transparency and strength of the transparent conductive layer are optimized. Preferably, the number average molecular weight of the silicon alkoxide oligomer of the formula (1) used as the binder is 400 ~ 2,000. When the molecular weight of the oligomer exceeds 2,000, the viscosity of the composition becomes excessively high, so that the handling of the composition is difficult. Also, when the molecular weight of the oligomer is less than 400, the hardness of the transparent conductive layer is poor. Here, the appropriate content of the silicon alkoxide oligomer is 0.001 ~ 4.0 by weight based on the total weight of the composition. The composition of the transparent conductive layer of the present invention further includes a binding resin such as polyvinyl alcohol or Emulgen 810 (KAO Chemical Co.). When a composition which also includes a binding resin is used, the transparency of the transparent conductive layer is improved and the surface of the transparent conductive layer becomes very smooth. At present, it is preferable that the content of the binding resin be 0.001 ~ 1.0% by weight based on the total weight of the composition. When the content of the bonding resin exceeds 1.0% by weight, the transparency and hardness of the transparent conductive layer decreases while the resistance of the same is good. Also, when the content of the binding resin is less than 0.001% by weight, the effect of decreasing surface tension is trivial. Also, the transparent conductive composition of the present invention may further include a silane compound such as tetraethoxysilane, tetramethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane or epoxy silane. In the present, as the epoxy silane, a compound is used is expressed by the formula 2.
O (CH3) k / \ I H2C-CH-CHz-O-A-Si- (OCH3) 3-k
Where A is alkyl of 1 to 5 carbon atoms and k is 0 or 1. In the present, the silane compound functions as a binder substance, thereby improving the hardness and conductivity of the layer. At present, it is preferable that the content of the silane compound be 0.001 ~ 3.0% by weight based on the total weight of the composition. As the conductive polymer of the present invention, any polymer having a conductivity and volume resistivity of 105 Om or less, for example, polyethylene dioxythiophene (PEDT), polyaniline, polypyrrole, polyacetylene, polyfuran, polyparaphenylene, polyselenophene or a mixture of PEDT and polystyrene sulfonate (PSS) (PENT / PSS). In the present, PENT / PSS is the most preferred. As the solvent, N-methyl pyrrolidone (NMP), N, N-dimethylformamide, water or an alcohol solvent such as methanol, ethanol, isopropyl alcohol and n-butanol can be used. Subsequently, a method for manufacturing a transparent conductive layer using the transparent conductive composition of the present invention, and the structure and use thereof, will be described in detail. A composition that includes a conductive polymer, the silicon alkoxide oligomer of the formula (1) and solvents, is deposited on a substrate. Here, polyvinyl alcohol or Emulgen 810 (KAO Chemical Co.) can be added. Then, the resultant is dried and heated to obtain a transparent, individual conductive layer as shown in Figure 1. Preferably, the heating process is carried out at
100 ~ 300 ° C. With reference to FIGURE 1, the transparent conductive layer consists of a conductive layer 12 formed on a substrate 11. In the present, the conductive layer 12 comprises a conductive polymer 13 and a hydrolysed product of silicon alkoxide 14 oligomer. transparent, individual conductive, manufactured by the above method has a hardness of about 7H and a resistance of 106 O / D, which can be used as a protective layer of electromagnetic waves for a display device such as a CRT. In order to obtain a transparent multilayer conductive layer, a composition including a conductive polymer, a silicon alkoxide oligomer of the formula (1) and solvents is deposited on a substrate and the resultant is then dried to obtain a conductive layer . A composition including silicon alkoxide oligomer of the formula 1 and a binder substance is deposited on the conductive layer. Then, the resultant is heated to obtain an overcoat layer. Here, preferably, the heating process is carried out at 100 ~ 300 ° C.
Herein, a silane compound such as epoxy silane, trimethoxysilane or vanadium silane can be added to the composition for the overcoat layer, which results in a transparent conductive layer having improved hardness and conductivity. According to the method described above, a transparent multilayer conductive layer can be obtained as shown in FIGURE 2. In the transparent multilayer conductive layer, a conductive layer 22 formed of a conductive polymer 23 and a hydrolyzed product of silicon alkoxide oligomer 24 is formed on a substrate 21, and an overcoating layer 23 formed of the hydrolyzed silicon alkoxide oligomer product is formed on the conductive layer 22. When the overcoating layer 23 is formed on the conductive layer using the silicon alkoxide oligomer hydrolyzed product, a transparent, low resistance conductive layer having a resistance of 103 O / G or less can be formed, which is useful as an anti-static layer for a display device such as a CRT
Hereinafter, the examples of the present invention will be described in detail, however, the present invention is not limited to the following examples.
EXAMPLE 1 30.0 g of aqueous solution of polyethylene dioxythiophene (PEDT) / polystyrene sulfonate (PSS) at 1.2% by weight, 16.0 g of water, 28.0 g of methanol, 18.0 g of ethanol, 6.9 g of isopropyl alcohol, 1.0 g were mixed. of N-methyl pyrrolidone (NMP) and 0.1 g of methylsilicate oligomer to prepare a first coating solution. The first coating solution was deposited on a substrate and then dried at about 50 ° C, and then cooled to form a conductive layer. Then, a second coating solution including 50 g of methyl ester oligomer dispersion and 1 g of epoxy silane was deposited on the conductive layer and the resulting structure was then sintered at about 150 ° C and then cooled to form a layer of overcoating, which results in a transparent, multi-layer conductive layer.
Example 2 A transparent, multilayer conductive layer was formed by the same method as the
Example 1, except that 0.2 g of methylsilicate oligomer was added in the preparation of the first coating solution.
Example 3 1.5 g of methylsilicate oligomer and 1.0 g of trimethoxymethyl silane were mixed and then 24.0 g of 1.2% by weight PEDT / PSS aqueous solution, 12.0 g of water, 20.0 g of methanol, 16.0 g of ethanol, were added. 18.0 g of isopropyl alcohol, 2.0 g of NMP and 2.0 g of dimethyl formaldehyde to the mixture to prepare a first coating solution. The first coating solution was deposited on a substrate, and the resultant was dried at about 50 ° C and then cooled to form a conductive layer. Then, a second coating solution including 50 g of methylsilicate oligomer dispersion and 1 g of epoxy silane was deposited on the conductive layer and the resultant was then sintered at about 150 ° C and then cooled to form an overcoat layer , which results in a transparent, multi-layer conductive layer.
Example 4 A transparent, multilayer conductive layer was formed by the same method as Example 3, except that 1.5 g of methyl silicate oligomer and 0.8 g of trimethoxymethyl silane were added as a binder in the preparation of the first coating solution.
Example 5 12.0 g of PEDT / PSS solution, 8.0 g of ethanol, 10.0 g of methanol, 9.0 g of isopropyl alcohol, 1.0 g of Emulsion 810 (KAO Chemical Co.), 2.0 g of NMP, 2.0 g of dimethylformamide were added. (DMF) and 1.6 g of methylsilicate oligomer to an aqueous solution of 0.5% polyvinyl alcohol, and then mixed to prepare a first coating solution. The first coating solution was deposited on a substrate and the resultant was dried at about 50 ° C and then cooled to form a conductive layer.
Then, a second coating solution including 50 g of methylsilicate oligomer dispersion and 1 g of epoxy silane was deposited on the conductive layer and the resultant was then sintered at about 150 ° C and then cooled to form an overcoat layer , which results in a transparent, multi-layered conductive layer.
Example 6 A transparent, multilayer conductive layer was formed by the same method as Example 1, except that epoxy silane was not added in the preparation of the second coating solution.
Example 7 A transparent, multilayer conductive layer was formed by the same method as Example 3, except that epoxy silane was not added in the preparation of the second coating solution.
Comparative Example 30 g of an aqueous solution of PEDT / PSS at 1.2% by weight, 16.0 g of water, 28.0 g of methanol, 18.0 g of ethanol, 6.9 g of isopropyl alcohol, 1.0 of NMP and 0.1 g of monomer were mixed. Methylsilicate to prepare a first coating solution. The first coating solution was deposited on a substrate and then the resultant was dried at about 180 ° C and then cooled to form a conductive layer. Then, a second coating solution including 1 g of methylsilicate monomer and 50 g of epoxy silane was deposited on the conductive layer and the resultant was then sintered at about 150 ° C and then cooled to form an overcoat layer, which results in a transparent, multi-layered conductive layer. The characteristics of the transparent conductive layers of Examples 1-7 and the Comparative Example are shown in Table 1.
Table 1 example resistance (O / D) hardness (pencil transmittance hardness, H) (%)
Example 1 10J 5 96 Example 2 10 '7 96 Example 3 10a 7 97 Example 4 1 (T 5 97 Example 5 10"5 97 Example 6 10J 4 96 Example 7 10c 6 97 Example 10a 5 82 Comparative
As can be seen from Table 1, the transmittance of the transparent conductive layer is excellent, and the hardness and strength thereof are good when a methylsilicate oligomer is used as a binder (Examples 1 and 2). Also, when the composition which also includes methyltrimethoxy silane is used as a second binder substance (Examples 3 and 4) and the composition further includes polyvinyl alcohol (Example 5), the transparent conductive layers manufactured by the compositions have a slightly higher strength, almost the same hardness and slightly moderate transmittance compared to Examples 1 and 2. On the other hand, when the second coating solution is used without epoxy silane
(Examples 6 and 7), the hardness decreases slightly while the resistance and transmittance are almost the same as compared to Examples 1 and 3. Also, in the case of the Comparative Example, the resistance is 105 O / G, and the transmittance decreases to approximately 82%. Here, the hardness of the transparent conductive layer is the same as Examples 1 and 4. According to the present invention, a transparent conductive layer having excellent transmittance, hardness and strength characteristic can be obtained. The transparent, individual conductive layer according to the present invention has a resistance of 105 O / O, a hardness of 5H or more, a transmittance of 95% or more, so that it can be applied to a wave protection layer electromagnetic for a display device such as a CRT. Also, the resistance of the transparent, multilayer conductive layer of the present invention, which has an overcoat layer on the individual transparent conductive layer, is 103 O / D which is smaller than that of the individual, transparent conductive layer. In this way, the transparent, multilayer conductive layer is very useful as an anti-static layer for a display device such as a CRT.
It is noted that in relation to this date, the best method known to the applicant to carry out the aforementioned invention, is that which is clear from the present description of the invention.
Having described the invention as above, the content of the following claims is claimed as property.
Claims (35)
1. A transparent conductive composition, characterized in that it includes a conductive polymer, a binder and solvents, wherein the binder substance is a silicon alkoxide oligomer expressed by the formula 1: OR I RO- (SiO) n-R 1 OR where R is hydrogen or alkyl of 1 to 20 carbon atoms and n is an integer from 2 to 10.
2. The transparent conductive composition according to claim 1, characterized in that the number average molecular weight of the silicon alkoxide oligomer is 400-2,000.
3. The transparent conductive composition according to claim 1, characterized in that the content of the conductive polymer is 0.05 ~ 5.0% by weight based on the total weight of the composition.
4. The transparent conductive composition according to claim 1, characterized in that the content of binder substance is 0.01 ~ 4.0% by weight based on the total weight of the composition.
5. The transparent conductive composition according to claim 1, characterized in that it also comprises a binding resin.
6. The transparent conductive composition according to claim 5, characterized in that the binding resin is polyvinyl alcohol.
7. The transparent conductive composition according to claim 5, characterized in that the binding resin content is 0.001 ~ 0.1% by weight based on the total weight of the composition.
8. The transparent conductive composition according to claim 1, characterized in that it also comprises a silane compound.
9. The transparent conductive composition according to claim 8, characterized in that the silane compound is at least one selected from the group consisting of tetraethoxysilane, tetramethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane and epoxy silane expressed by formula 2. O (CH3) k / \ I H2C-CH-OH? -O-A-Si- (OCH3) 3-k 2 where A is alkyl of 1 to 5 carbon atoms and is 0 or 1
10. The transparent conductive composition according to claim 8, characterized in that the content of the silane compound is 0.001 ~ 3.0% by weight based on the total weight of the composition.
11. The transparent conductive composition according to claim 1, characterized in that the conductive polymer is at least one selected from the group consisting of polyethylene dioxythiophene, polyaniline, polypyrrole, polyacetylene, polyfuran, polyparaphenylene, polyselenophene and a mixture of polyethylene dioxythiophene (PEDT) and polystyrene sulfonate (PSS) (PENT / PSS).
12. The transparent conductive layer, characterized in that it comprises a conductive layer formed of a conductive polymer and a hydrolyzed product of a silicon alkoxide oligomer expressed by the formula 1: OR I RO- (SiO) n-R 1 I OR where R is hydrogen or alkyl of 1 to 20 carbon atoms and n is an integer from 2 to 10.
13. A transparent conductive layer according to claim 12, characterized in that the weight ratio of the conductive polymer to the hydroxylized silicon alkoxide oligomer product is between 100: 0.2 and 100: 99.98.
14. A transparent conductive layer according to claim 12, characterized in that it also comprises a bonding resin.
15. A transparent conductive layer according to claim 14, characterized in that the binding resin is polyvinyl alcohol.
16. A transparent conductive layer according to claim 14, characterized in that the weight ratio of the conductive polymer to the bonding resin is between 100: 0.4 and 100: 95.3.
17. A transparent conductive layer according to claim 12, characterized in that it also comprises a silane compound.
18. A transparent conductive layer according to claim 17, characterized in that the silane compound is at least one selected from the group consisting of tetraethoxysilane, tetramethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane and epoxy silane expressed by formula 2. O (CH3) k / \ I H2C-CH-CH? -O-A-Si- (OCH3) 3-k where A is alkyl of 1 to 5 carbon atoms and k is 0 or 1.
19. A transparent conductive layer according to claim 17, characterized in that the weight ratio of the conductive polymer to the silane compound is between 100: 0.02 and 100: 99.97.
20. A transparent conductive layer according to claim 12, characterized in that it further comprises an overcoating layer made of a hydrolyzed product of a silicon alkoxide oligomer expressed by the formula 1 formed on the conductive layer.
21. A method for manufacturing a transparent conductive layer, characterized in that it comprises the steps of: (a) coating a composition comprising a conductive polymer, a silicon alkoxide oligomer of the formula 1 and solvents on a substrate and drying the resultant; and (b) heating the resultant to form a conductive layer: OR I RO- (SiO) n-R 1 I OR where R is hydrogen or alkyl of 1 to 20 carbon atoms and n is an integer of a 10.
22. The method according to claim 21, characterized in that the heating of step (b) is carried out at 100-300 ° C.
23. The method according to claim 21, characterized in that the content of the conductive polymer used in step (a) is 0. 05-5.0% by weight based on the total weight of the composition.
24. The method according to claim 21, characterized in that the content of the silicon alkoxide oligomer used in step (a) is 0.001-4.0% by weight based on the total weight of the composition.
25. The method according to claim 21, characterized in that the composition used in step (a) further comprises a binding resin.
26. The method according to claim 25, characterized in that the binding resin is polyvinyl alcohol.
27. The method according to claim 25, characterized in that the content of binding resin is 0.001 ~ 1.0% by weight based on the total weight of the composition.
28. The method according to claim 21, characterized in that the composition used in step (a) further comprises a silane compound.
29. The method according to claim 28, characterized in that the silane compound is at least one selected from the group consisting of tetraethoxysilane, tetramethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane and epoxy silane expressed by formula 2. O (CH3) k / \ I H2C-CH-CH2-O-A-Si- (OCH3) 3-k where A is alkyl of 1 to 5 carbon atoms and k is 0 or 1
30. The method according to claim 28, characterized in that the content of silane compound is 0.001-3.0% by weight based on the total weight of the composition.
31. The method according to claim 21, characterized in that the conductive polymer is at least one selected from the group consisting of polyethylene dioxythiophene, polystyrene sulfonate, polyaniline, polypyrrole, polyacetylene, polyfuran, polyparaphenylene, polyselenophen and a mixture of polyethylene dioxythiophene (PEDT). ) and polystyrene sulfonate (PSS) (PENT / PSS).
32. The method according to claim 21, characterized in that the molecular weight in number of the silicon alkoxide oligomer is 400-2,000.
33. The method according to claim 21, characterized in that it further comprises: (c) coating a composition comprising a silicon alkoxide oligomer expressed by formula 1 and a binder substance on the conductive layer, and drying and heating the resultant to form a layer of overcoat. OR RO- (SiO) n-R OR where R is hydrogen of 1 to 20 carbon atoms and n is an integer from 2 to 10.
34. The method according to claim 33, characterized in that the heating of step (c) is carried out at 100 ~ 300 ° C.
35. The method according to claim 33, characterized in that the molecular weight in number of the silicon alkoxide oligomer is 400-2,000.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR96-65505 | 1996-12-13 | ||
| KR19960065505 | 1996-12-13 | ||
| KR9665505 | 1996-12-13 | ||
| KR97-65905 | 1997-12-04 | ||
| KR1019970065905A KR100243254B1 (en) | 1996-12-13 | 1997-12-04 | Composition for transparent conductive layer, manufacturing method of transparent conductive layer and surface conductive articles |
| KR9765905 | 1997-12-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MX9710067A MX9710067A (en) | 1998-10-31 |
| MXPA97010067A true MXPA97010067A (en) | 1999-01-11 |
Family
ID=
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1384571B1 (en) | Laminated body | |
| JP2978867B2 (en) | Transparent conductive composition, transparent conductive film formed therefrom and method for producing the same | |
| US20050209392A1 (en) | Polymer binders for flexible and transparent conductive coatings containing carbon nanotubes | |
| KR100718848B1 (en) | Anti-static polyester film | |
| EP0383909B1 (en) | Method for protection of spacecraft against electrostatic discharge | |
| US20110195255A1 (en) | Polythiophene-based conductive polymer membrane | |
| JP4481713B2 (en) | Conductive film and method for producing the same | |
| JPH0841441A (en) | Indium-tin oxide powder for shielding ultraviolet and near infrared rays, ultraviolet and near-infrared ray-shielding glass and production thereof | |
| JP2006199781A (en) | Electroconductive coating composition and formed product | |
| KR100243254B1 (en) | Composition for transparent conductive layer, manufacturing method of transparent conductive layer and surface conductive articles | |
| EP0875905B1 (en) | Low dielectric constant composite film for integrated circuits of an inorganic aerogel and an organic filler grafted to the inorganic material and method of fabrication | |
| KR20180031017A (en) | Conductive transparent coating | |
| JP4700391B2 (en) | Conductive film | |
| MXPA97010067A (en) | Transparent conductor composition, transparent conductor coat formed of the same and manufacturing method for myself | |
| JP2006294411A (en) | Conductive film | |
| JP4616688B2 (en) | Conductive film | |
| JPS626494B2 (en) | ||
| JPH11105182A (en) | Transparent electroconductive film | |
| JP2004185914A (en) | Transparent conductive film, compound sheet for transparent conductive film formation and transparent plastic member having transparent conductive film on its surface | |
| KR100426792B1 (en) | Coating composition for Electrostatic Dissipative and Electrostatic Dissipative Shielding and Moisture Barrier Bags dopped coating composition for Electrostatic Dissipative | |
| KR100436710B1 (en) | Transparent conductive layer, preparing method thereof and image display device employing the same | |
| US7744782B2 (en) | Transparent conductor | |
| KR100420049B1 (en) | A composition for a protective layer of a transparent conductive layer and a method of preparing a protective layer using the same | |
| JP4617583B2 (en) | Gas barrier film | |
| JPH0526287B2 (en) |