MX9604016A - Procedimiento para la fijacion de componentes electronicos sobre un substrato, mediante sinterizacion a presion. - Google Patents
Procedimiento para la fijacion de componentes electronicos sobre un substrato, mediante sinterizacion a presion.Info
- Publication number
- MX9604016A MX9604016A MX9604016A MX9604016A MX9604016A MX 9604016 A MX9604016 A MX 9604016A MX 9604016 A MX9604016 A MX 9604016A MX 9604016 A MX9604016 A MX 9604016A MX 9604016 A MX9604016 A MX 9604016A
- Authority
- MX
- Mexico
- Prior art keywords
- sintering
- substrate
- pressure
- electronic components
- over
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
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- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
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- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
En un procedimiento para la fijacion de componentes electronicos sobre un substrato, mediante sinterizacion a presion, conocido por la memoria EP-O 242 B1, se tiene que producir sobre al menos uno de componentes una capa (3) de polvo de metal apto para la sinterizacion. Esta capa se produce segun la invencion mediante precipitacion sobre el componente concerniente de un polvo de metal nanocristalino obtenido mediante vaporizacion y condensacion de un metal.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19533561 | 1995-09-11 | ||
DE19533561.9 | 1995-09-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
MX9604016A true MX9604016A (es) | 1997-07-31 |
MXPA96004016A MXPA96004016A (es) | 1997-12-01 |
Family
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Also Published As
Publication number | Publication date |
---|---|
JPH09107049A (ja) | 1997-04-22 |
EP0764978A2 (de) | 1997-03-26 |
EP0764978A3 (de) | 1999-04-21 |
DE59611448D1 (de) | 2007-12-06 |
US5893511A (en) | 1999-04-13 |
EP0764978B1 (de) | 2007-10-24 |
JP3469001B2 (ja) | 2003-11-25 |
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