MX2019006280A - Proceso y fabricación de materilaes de baja dimensión que soportan tanto la autotermalización como la autolocalización. - Google Patents

Proceso y fabricación de materilaes de baja dimensión que soportan tanto la autotermalización como la autolocalización.

Info

Publication number
MX2019006280A
MX2019006280A MX2019006280A MX2019006280A MX2019006280A MX 2019006280 A MX2019006280 A MX 2019006280A MX 2019006280 A MX2019006280 A MX 2019006280A MX 2019006280 A MX2019006280 A MX 2019006280A MX 2019006280 A MX2019006280 A MX 2019006280A
Authority
MX
Mexico
Prior art keywords
self
thermalization
localization
manufacture
low
Prior art date
Application number
MX2019006280A
Other languages
English (en)
Inventor
Curran Patrick
Original Assignee
Seminuclear Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2016/063933 external-priority patent/WO2018101905A1/en
Application filed by Seminuclear Inc filed Critical Seminuclear Inc
Priority claimed from PCT/US2017/064020 external-priority patent/WO2018164746A2/en
Publication of MX2019006280A publication Critical patent/MX2019006280A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

Varios artículos y dispositivos se pueden fabricar para tomar ventaja de lo que se cree que es un ciclo termodinámico en el que la espontaneidad se debe a un equilibrado de entropía intrínseca. El ciclo termodinámico novedoso explota la transición de fase cuántica entre la termalización cuántica y la localización cuántica. Los dispositivos preferidos incluyen una celda fonovoltaica, un rectificador y un conductor para usarse en un circuito integrado.
MX2019006280A 2016-11-29 2017-11-30 Proceso y fabricación de materilaes de baja dimensión que soportan tanto la autotermalización como la autolocalización. MX2019006280A (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
PCT/US2016/063933 WO2018101905A1 (en) 2016-11-29 2016-11-29 Composition and method for making picocrystalline artificial borane atoms
US201762471815P 2017-03-15 2017-03-15
US201762591848P 2017-11-29 2017-11-29
PCT/US2017/064020 WO2018164746A2 (en) 2016-11-29 2017-11-30 Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization

Publications (1)

Publication Number Publication Date
MX2019006280A true MX2019006280A (es) 2020-02-07

Family

ID=72834774

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2019006280A MX2019006280A (es) 2016-11-29 2017-11-30 Proceso y fabricación de materilaes de baja dimensión que soportan tanto la autotermalización como la autolocalización.

Country Status (2)

Country Link
MX (1) MX2019006280A (es)
RU (1) RU2756481C2 (es)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025611A (en) * 1996-09-20 2000-02-15 The Board Of Regents Of The University Of Nebraska Boron-carbide and boron rich rhobohedral based transistors and tunnel diodes
US7397048B2 (en) * 2004-09-17 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for boron implantation
TWI520905B (zh) * 2005-08-30 2016-02-11 安特格利斯公司 利用選擇性氟化硼前驅物之硼離子植入方法，及供植入用之大群氫化硼之形成方法
US7935618B2 (en) * 2007-09-26 2011-05-03 Micron Technology, Inc. Sputtering-less ultra-low energy ion implantation

Also Published As

Publication number Publication date
RU2019120212A3 (es) 2021-04-09
RU2756481C2 (ru) 2021-09-30
RU2019120212A (ru) 2021-01-11

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