MX164275B - Superarticulos de superficie lateral que tienen conductividad diferencial negativa-procedimiento novedoso para producir los mismos - Google Patents

Superarticulos de superficie lateral que tienen conductividad diferencial negativa-procedimiento novedoso para producir los mismos

Info

Publication number
MX164275B
MX164275B MX15053A MX1505389A MX164275B MX 164275 B MX164275 B MX 164275B MX 15053 A MX15053 A MX 15053A MX 1505389 A MX1505389 A MX 1505389A MX 164275 B MX164275 B MX 164275B
Authority
MX
Mexico
Prior art keywords
superarticles
produce
negative differential
new procedure
differential conductivity
Prior art date
Application number
MX15053A
Other languages
English (en)
Inventor
Gary Bernstein
David K Ferry
Original Assignee
Univ Arizona
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Arizona filed Critical Univ Arizona
Publication of MX164275B publication Critical patent/MX164275B/es

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8181—Structures having no potential periodicity in the vertical direction, e.g. lateral superlattices or lateral surface superlattices [LSS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
MX15053A 1988-02-24 1989-02-23 Superarticulos de superficie lateral que tienen conductividad diferencial negativa-procedimiento novedoso para producir los mismos MX164275B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/159,721 US4872038A (en) 1988-02-24 1988-02-24 Lateral surface superlattice having negative differential conductivity novel process for producing same

Publications (1)

Publication Number Publication Date
MX164275B true MX164275B (es) 1992-07-27

Family

ID=22573728

Family Applications (1)

Application Number Title Priority Date Filing Date
MX15053A MX164275B (es) 1988-02-24 1989-02-23 Superarticulos de superficie lateral que tienen conductividad diferencial negativa-procedimiento novedoso para producir los mismos

Country Status (4)

Country Link
US (1) US4872038A (es)
EP (1) EP0335498A3 (es)
JP (1) JPH027533A (es)
MX (1) MX164275B (es)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238869A (en) * 1988-07-25 1993-08-24 Texas Instruments Incorporated Method of forming an epitaxial layer on a heterointerface
US5012304A (en) * 1989-03-16 1991-04-30 Bell Communications Research, Inc. Semiconductor devices having strain-induced lateral confinement of charge carriers
US5132981A (en) * 1989-05-31 1992-07-21 Hitachi, Ltd. Semiconductor optical device
US5283445A (en) * 1991-11-29 1994-02-01 Fujitsu Limited Quantum semiconductor device employing quantum boxes for enabling compact size and high-speed operation
US6248684B1 (en) 1992-11-19 2001-06-19 Englehard Corporation Zeolite-containing oxidation catalyst and method of use
JP2554433B2 (ja) * 1992-12-24 1996-11-13 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体装置およびその製造方法
JP3500541B2 (ja) * 1994-02-15 2004-02-23 富士通株式会社 単電子トンネル接合装置の製造方法
JPH07326730A (ja) * 1994-05-31 1995-12-12 Mitsubishi Electric Corp 半導体装置，その製造方法，単一電子デバイス，及びその製造方法
US20070108437A1 (en) * 1998-06-08 2007-05-17 Avto Tavkhelidze Method of fabrication of high temperature superconductors based on new mechanism of electron-electron interaction
TW200625641A (en) * 2004-09-24 2006-07-16 Koninkl Philips Electronics Nv Field effect transistor
KR20130128281A (ko) * 2012-05-16 2013-11-26 삼성전자주식회사 고전자이동도 트랜지스터 및 그 제조방법
US10739184B2 (en) 2017-06-30 2020-08-11 Tesla, Inc. Vehicle occupant classification systems and methods
US11749770B2 (en) 2018-10-15 2023-09-05 Arizona Board Of Regents On Behalf Of Arizona State University True hot-carrier solar cell and hot-carrier transfer
CN115036366A (zh) 2021-03-05 2022-09-09 联华电子股份有限公司 半导体装置及其制作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4503447A (en) * 1982-07-16 1985-03-05 The United States Of America As Represented By The Secretary Of The Army Multi-dimensional quantum well device
JPS61160977A (ja) * 1985-01-08 1986-07-21 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
US4733282A (en) * 1985-08-13 1988-03-22 International Business Machines Corporation One-dimensional quantum pipeline type carrier path semiconductor devices

Also Published As

Publication number Publication date
EP0335498A3 (en) 1990-04-04
US4872038A (en) 1989-10-03
EP0335498A2 (en) 1989-10-04
JPH027533A (ja) 1990-01-11

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