MX164275B - Superarticulos de superficie lateral que tienen conductividad diferencial negativa-procedimiento novedoso para producir los mismos - Google Patents
Superarticulos de superficie lateral que tienen conductividad diferencial negativa-procedimiento novedoso para producir los mismosInfo
- Publication number
- MX164275B MX164275B MX15053A MX1505389A MX164275B MX 164275 B MX164275 B MX 164275B MX 15053 A MX15053 A MX 15053A MX 1505389 A MX1505389 A MX 1505389A MX 164275 B MX164275 B MX 164275B
- Authority
- MX
- Mexico
- Prior art keywords
- superarticles
- produce
- negative differential
- new procedure
- differential conductivity
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/158—Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/159,721 US4872038A (en) | 1988-02-24 | 1988-02-24 | Lateral surface superlattice having negative differential conductivity novel process for producing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX164275B true MX164275B (es) | 1992-07-27 |
Family
ID=22573728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX15053A MX164275B (es) | 1988-02-24 | 1989-02-23 | Superarticulos de superficie lateral que tienen conductividad diferencial negativa-procedimiento novedoso para producir los mismos |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4872038A (es) |
| EP (1) | EP0335498A3 (es) |
| JP (1) | JPH027533A (es) |
| MX (1) | MX164275B (es) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5238869A (en) * | 1988-07-25 | 1993-08-24 | Texas Instruments Incorporated | Method of forming an epitaxial layer on a heterointerface |
| US5012304A (en) * | 1989-03-16 | 1991-04-30 | Bell Communications Research, Inc. | Semiconductor devices having strain-induced lateral confinement of charge carriers |
| US5132981A (en) * | 1989-05-31 | 1992-07-21 | Hitachi, Ltd. | Semiconductor optical device |
| US5283445A (en) * | 1991-11-29 | 1994-02-01 | Fujitsu Limited | Quantum semiconductor device employing quantum boxes for enabling compact size and high-speed operation |
| US6248684B1 (en) | 1992-11-19 | 2001-06-19 | Englehard Corporation | Zeolite-containing oxidation catalyst and method of use |
| JP2554433B2 (ja) * | 1992-12-24 | 1996-11-13 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体装置およびその製造方法 |
| JP3500541B2 (ja) * | 1994-02-15 | 2004-02-23 | 富士通株式会社 | 単電子トンネル接合装置の製造方法 |
| JPH07326730A (ja) * | 1994-05-31 | 1995-12-12 | Mitsubishi Electric Corp | 半導体装置，その製造方法，単一電子デバイス，及びその製造方法 |
| US20070108437A1 (en) * | 1998-06-08 | 2007-05-17 | Avto Tavkhelidze | Method of fabrication of high temperature superconductors based on new mechanism of electron-electron interaction |
| TW200625641A (en) * | 2004-09-24 | 2006-07-16 | Koninkl Philips Electronics Nv | Field effect transistor |
| KR20130128281A (ko) * | 2012-05-16 | 2013-11-26 | 삼성전자주식회사 | 고전자이동도 트랜지스터 및 그 제조방법 |
| US10739184B2 (en) | 2017-06-30 | 2020-08-11 | Tesla, Inc. | Vehicle occupant classification systems and methods |
| US11749770B2 (en) | 2018-10-15 | 2023-09-05 | Arizona Board Of Regents On Behalf Of Arizona State University | True hot-carrier solar cell and hot-carrier transfer |
| CN115036366A (zh) * | 2021-03-05 | 2022-09-09 | 联华电子股份有限公司 | 半导体装置及其制作方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4503447A (en) * | 1982-07-16 | 1985-03-05 | The United States Of America As Represented By The Secretary Of The Army | Multi-dimensional quantum well device |
| JPS61160977A (ja) * | 1985-01-08 | 1986-07-21 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ |
| US4733282A (en) * | 1985-08-13 | 1988-03-22 | International Business Machines Corporation | One-dimensional quantum pipeline type carrier path semiconductor devices |
-
1988
- 1988-02-24 US US07/159,721 patent/US4872038A/en not_active Expired - Fee Related
-
1989
- 1989-02-22 JP JP1040446A patent/JPH027533A/ja active Pending
- 1989-02-23 MX MX15053A patent/MX164275B/es unknown
- 1989-02-24 EP EP89301840A patent/EP0335498A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0335498A2 (en) | 1989-10-04 |
| JPH027533A (ja) | 1990-01-11 |
| EP0335498A3 (en) | 1990-04-04 |
| US4872038A (en) | 1989-10-03 |
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